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Source: The Open Library

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1Semiconductors and Semimetals

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Book's cover

“Semiconductors and Semimetals” Metadata:

  • Title: Semiconductors and Semimetals
  • Author:
  • Language: English
  • Number of Pages: Median: 370
  • Publisher: Academic Pr - Academic Press
  • Publish Date: ➤  
  • Publish Location: Orlando, Fla

“Semiconductors and Semimetals” Subjects and Themes:

Edition Identifiers:

First Setence:

"The achievement of single crystal growth of large-area semiconductor films on different kinds of substrate materials is of technological importance in many solid state electronic devices."

Access and General Info:

  • First Year Published: 1976
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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2Materials aspects of GaAs and InP based structures

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“Materials aspects of GaAs and InP based structures” Metadata:

  • Title: ➤  Materials aspects of GaAs and InP based structures
  • Author:
  • Language: English
  • Number of Pages: Median: 606
  • Publisher: Prentice Hall
  • Publish Date:
  • Publish Location: Englewood Cliffs, N.J

“Materials aspects of GaAs and InP based structures” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1991
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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3Heteroepitaxy on silicon II

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“Heteroepitaxy on silicon II” Metadata:

  • Title: Heteroepitaxy on silicon II
  • Authors:
  • Language: English
  • Number of Pages: Median: 508
  • Publisher: ➤  Materials Research Society - University of Cambridge ESOL Examinations
  • Publish Date:
  • Publish Location: Pittsburgh, Pa

“Heteroepitaxy on silicon II” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1987
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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4Gallium Arsenide Integrated Circuits

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Book's cover

“Gallium Arsenide Integrated Circuits” Metadata:

  • Title: ➤  Gallium Arsenide Integrated Circuits
  • Author:
  • Language: English
  • Number of Pages: Median: 486
  • Publisher: ➤  Butterworth-Heinemann Ltd - BSP Professional
  • Publish Date:
  • Publish Location: London

“Gallium Arsenide Integrated Circuits” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1988
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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5Semiconductors and Semimetals: Minority Carriers in Iii-V Semiconductors

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“Semiconductors and Semimetals: Minority Carriers in Iii-V Semiconductors” Metadata:

  • Title: ➤  Semiconductors and Semimetals: Minority Carriers in Iii-V Semiconductors
  • Author:
  • Language: English
  • Number of Pages: Median: 409
  • Publisher: ➤  Academic Press, Inc. - Academic Press
  • Publish Date:
  • Publish Location: Boston

“Semiconductors and Semimetals: Minority Carriers in Iii-V Semiconductors” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1993
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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61998 GaAs Reliability Workshop

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“1998 GaAs Reliability Workshop” Metadata:

  • Title: 1998 GaAs Reliability Workshop
  • Authors: ➤  
  • Language: English
  • Number of Pages: Median: 117
  • Publisher: ➤  Institute of Electrical & Electronics Enginee - IEEE
  • Publish Date:
  • Publish Location: [Piscataway, New Jersey

“1998 GaAs Reliability Workshop” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1998
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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7Heterostructures on silicon

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“Heterostructures on silicon” Metadata:

  • Title: Heterostructures on silicon
  • Author: ➤  
  • Language: English
  • Number of Pages: Median: 365
  • Publisher: ➤  Springer - Kluwer Academic Publishers
  • Publish Date:
  • Publish Location: Boston - Dordrecht

“Heterostructures on silicon” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1899
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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8Gallium arsenide digital integrated circuit design

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“Gallium arsenide digital integrated circuit design” Metadata:

  • Title: ➤  Gallium arsenide digital integrated circuit design
  • Author:
  • Language: English
  • Number of Pages: Median: 483
  • Publisher: McGraw-Hill
  • Publish Date:
  • Publish Location: New York

“Gallium arsenide digital integrated circuit design” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1990
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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9World atlas of satellites

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“World atlas of satellites” Metadata:

  • Title: World atlas of satellites
  • Author:
  • Language: English
  • Number of Pages: Median: 403
  • Publisher: Artech House
  • Publish Date:
  • Publish Location: Dedham, MA

“World atlas of satellites” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1983
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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10GaAs FET principles and technology

Book's cover

“GaAs FET principles and technology” Metadata:

  • Title: ➤  GaAs FET principles and technology
  • Language: English
  • Number of Pages: Median: 773
  • Publisher: Artech House
  • Publish Date:
  • Publish Location: Dedham, Mass

“GaAs FET principles and technology” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1982
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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11Microprocessor design for GaAs technology

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Book's cover

“Microprocessor design for GaAs technology” Metadata:

  • Title: ➤  Microprocessor design for GaAs technology
  • Author:
  • Language: English
  • Number of Pages: Median: 330
  • Publisher: Prentice Hall
  • Publish Date:
  • Publish Location: Englewood Cliffs, N.J

“Microprocessor design for GaAs technology” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1989
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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12Gallium arsenide and related compounds 1990

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“Gallium arsenide and related compounds 1990” Metadata:

  • Title: ➤  Gallium arsenide and related compounds 1990
  • Authors: ➤  
  • Language: English
  • Number of Pages: Median: 654
  • Publisher: ➤  Taylor & Francis - Institute of Physics
  • Publish Date:
  • Publish Location: ➤  Philadelphia - Bristol [England]

“Gallium arsenide and related compounds 1990” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1990
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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13VLSI fabrication principles

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“VLSI fabrication principles” Metadata:

  • Title: VLSI fabrication principles
  • Author:
  • Language: English
  • Number of Pages: Median: 750
  • Publisher: Wiley
  • Publish Date:
  • Publish Location: New York

“VLSI fabrication principles” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 1983
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Printdisabled

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    14GaN and Related Materials

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    “GaN and Related Materials” Metadata:

    • Title: GaN and Related Materials
    • Author:
    • Language: English
    • Number of Pages: Median: 456
    • Publisher: Taylor & Francis Group
    • Publish Date:

    “GaN and Related Materials” Subjects and Themes:

    Edition Identifiers:

    Access and General Info:

    • First Year Published: 1997
    • Is Full Text Available: No
    • Is The Book Public: No
    • Access Status: No_ebook

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    15Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors Held in Cheju Island, Korea, 28 August-2 September 1995

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    “Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors Held in Cheju Island, Korea, 28 August-2 September 1995” Metadata:

    • Title: ➤  Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors Held in Cheju Island, Korea, 28 August-2 September 1995
    • Author: ➤  
    • Language: English
    • Number of Pages: Median: 1312
    • Publisher: Taylor & Francis Group
    • Publish Date:

    “Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors Held in Cheju Island, Korea, 28 August-2 September 1995” Subjects and Themes:

    Edition Identifiers:

    Access and General Info:

    • First Year Published: 2020
    • Is Full Text Available: No
    • Is The Book Public: No
    • Access Status: No_ebook

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    16Properties of lattice-matched and strained indium gallium arsenide

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    “Properties of lattice-matched and strained indium gallium arsenide” Metadata:

    • Title: ➤  Properties of lattice-matched and strained indium gallium arsenide
    • Author:
    • Language: English
    • Number of Pages: Median: 317
    • Publisher: ➤  INSPEC - INSPEC, Institution of Electrical Engineers - IEE - INSPEC, the Institution of Electrical Engineers
    • Publish Date:
    • Publish Location: London

    “Properties of lattice-matched and strained indium gallium arsenide” Subjects and Themes:

    Edition Identifiers:

    Access and General Info:

    • First Year Published: 1993
    • Is Full Text Available: No
    • Is The Book Public: No
    • Access Status: No_ebook

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    17Semiconducting and insulating materials 1998

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    “Semiconducting and insulating materials 1998” Metadata:

    • Title: ➤  Semiconducting and insulating materials 1998
    • Authors: ➤  
    • Language: English
    • Number of Pages: Median: 346
    • Publisher: ➤  Institute of Electrical and Electronics Engineers - The Institute of Electrical and Electronics Engineers, Inc. - Institute of Electrical & Electronics Enginee
    • Publish Date:
    • Publish Location: New York, NY - Piscataway, N.J

    “Semiconducting and insulating materials 1998” Subjects and Themes:

    Edition Identifiers:

    Access and General Info:

    • First Year Published: 1998
    • Is Full Text Available: No
    • Is The Book Public: No
    • Access Status: No_ebook

    Online Access

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      18Electrical characterization of GaAs materials and devices

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      “Electrical characterization of GaAs materials and devices” Metadata:

      • Title: ➤  Electrical characterization of GaAs materials and devices
      • Author:
      • Language: English
      • Number of Pages: Median: 240
      • Publisher: Wiley
      • Publish Date:
      • Publish Location: Chichester - New York

      “Electrical characterization of GaAs materials and devices” Subjects and Themes:

      Edition Identifiers:

      Access and General Info:

      • First Year Published: 1989
      • Is Full Text Available: Yes
      • Is The Book Public: No
      • Access Status: Printdisabled

      Online Access

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        19Test structure implementation document

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        “Test structure implementation document” Metadata:

        • Title: ➤  Test structure implementation document
        • Author:
        • Language: English
        • Number of Pages: Median: 88
        • Publisher: ➤  U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology - For sale by the Supt. of Docs., U.S. G.P.O.
        • Publish Date:
        • Publish Location: ➤  Gaithersburg, MD - Washington - Washington, DC

        “Test structure implementation document” Subjects and Themes:

        Edition Identifiers:

        Access and General Info:

        • First Year Published: 1995
        • Is Full Text Available: No
        • Is The Book Public: No
        • Access Status: No_ebook

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          20Microwave MESFETs and HEMTs

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          Book's cover

          “Microwave MESFETs and HEMTs” Metadata:

          • Title: Microwave MESFETs and HEMTs
          • Author:
          • Language: English
          • Number of Pages: Median: 349
          • Publisher: ➤  Artech House - Artech Print on Demand - Artech House Publishers
          • Publish Date:
          • Publish Location: Boston

          “Microwave MESFETs and HEMTs” Subjects and Themes:

          Edition Identifiers:

          Access and General Info:

          • First Year Published: 1991
          • Is Full Text Available: Yes
          • Is The Book Public: No
          • Access Status: Printdisabled

          Online Access

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            21GaAs IC Symposium

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            “GaAs IC Symposium” Metadata:

            • Title: GaAs IC Symposium
            • Authors: ➤  
            • Language: English
            • Number of Pages: Median: 283
            • Publisher: IEEE - IEEE Standards Office
            • Publish Date:
            • Publish Location: Piscataway, New Jersey

            “GaAs IC Symposium” Subjects and Themes:

            Edition Identifiers:

            Access and General Info:

            • First Year Published: 2000
            • Is Full Text Available: No
            • Is The Book Public: No
            • Access Status: No_ebook

            Online Access

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              22Gallium arsenide microwave bulk and transit-time devices

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              “Gallium arsenide microwave bulk and transit-time devices” Metadata:

              • Title: ➤  Gallium arsenide microwave bulk and transit-time devices
              • Author:
              • Language: English
              • Number of Pages: Median: 255
              • Publisher: Artech House
              • Publish Date:
              • Publish Location: Dedham, Mass

              “Gallium arsenide microwave bulk and transit-time devices” Subjects and Themes:

              Edition Identifiers:

              Access and General Info:

              • First Year Published: 1972
              • Is Full Text Available: No
              • Is The Book Public: No
              • Access Status: No_ebook

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              23Wide energy bandgap electronic devices

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              Book's cover

              “Wide energy bandgap electronic devices” Metadata:

              • Title: ➤  Wide energy bandgap electronic devices
              • Author:
              • Language: English
              • Publisher: ➤  World Scientific Pub. - World Scientific Publishing Co Pte Ltd
              • Publish Date:
              • Publish Location: River Edge, NJ

              “Wide energy bandgap electronic devices” Subjects and Themes:

              Edition Identifiers:

              Access and General Info:

              • First Year Published: 2003
              • Is Full Text Available: No
              • Is The Book Public: No
              • Access Status: No_ebook

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              24Advanced surface processes for optoelectronics

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              “Advanced surface processes for optoelectronics” Metadata:

              • Title: ➤  Advanced surface processes for optoelectronics
              • Authors:
              • Language: English
              • Number of Pages: Median: 312
              • Publisher: Materials Research Society
              • Publish Date:
              • Publish Location: Pittsburgh, Pa

              “Advanced surface processes for optoelectronics” Subjects and Themes:

              Edition Identifiers:

              Access and General Info:

              • First Year Published: 1988
              • Is Full Text Available: No
              • Is The Book Public: No
              • Access Status: No_ebook

              Online Access

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                25Properties of gallium arsenide

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                “Properties of gallium arsenide” Metadata:

                • Title: Properties of gallium arsenide
                • Author:
                • Language: English
                • Number of Pages: Median: 981
                • Publisher: ➤  INSPEC - Institution of Electrical Engineers
                • Publish Date:
                • Publish Location: London

                “Properties of gallium arsenide” Subjects and Themes:

                Edition Identifiers:

                Access and General Info:

                • First Year Published: 1996
                • Is Full Text Available: No
                • Is The Book Public: No
                • Access Status: No_ebook

                Online Access

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                  26Very High Speed Integrated Circuits

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                  Book's cover

                  “Very High Speed Integrated Circuits” Metadata:

                  • Title: ➤  Very High Speed Integrated Circuits
                  • Author:
                  • Language: English
                  • Number of Pages: Median: 309
                  • Publisher: Academic Press
                  • Publish Date:
                  • Publish Location: Boston - London

                  “Very High Speed Integrated Circuits” Subjects and Themes:

                  Edition Identifiers:

                  Access and General Info:

                  • First Year Published: 1990
                  • Is Full Text Available: No
                  • Is The Book Public: No
                  • Access Status: Unclassified

                  Online Access

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                    27Growth, Characterization, Processing of Iii-V Materials With Correlations to Device Performances, 1987

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                    “Growth, Characterization, Processing of Iii-V Materials With Correlations to Device Performances, 1987” Metadata:

                    • Title: ➤  Growth, Characterization, Processing of Iii-V Materials With Correlations to Device Performances, 1987
                    • Author:
                    • Language: English
                    • Number of Pages: Median: 521
                    • Publisher: ➤  Materials Research Society - Editions de Physique
                    • Publish Date:
                    • Publish Location: [Paris]

                    “Growth, Characterization, Processing of Iii-V Materials With Correlations to Device Performances, 1987” Subjects and Themes:

                    Edition Identifiers:

                    Access and General Info:

                    • First Year Published: 1987
                    • Is Full Text Available: No
                    • Is The Book Public: No
                    • Access Status: No_ebook

                    Online Access

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                      28Compound and Josephson High-Speed Devices

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                      “Compound and Josephson High-Speed Devices” Metadata:

                      • Title: ➤  Compound and Josephson High-Speed Devices
                      • Authors:
                      • Language: English
                      • Number of Pages: Median: 306
                      • Publisher: ➤  Springer London, Limited - Springer
                      • Publish Date:

                      “Compound and Josephson High-Speed Devices” Subjects and Themes:

                      Edition Identifiers:

                      Access and General Info:

                      • First Year Published: 2013
                      • Is Full Text Available: No
                      • Is The Book Public: No
                      • Access Status: No_ebook

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                      29GaAs Devices and Circuits

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                      “GaAs Devices and Circuits” Metadata:

                      • Title: GaAs Devices and Circuits
                      • Author:
                      • Language: English
                      • Publisher: ➤  Springer - Springer London, Limited
                      • Publish Date:

                      “GaAs Devices and Circuits” Subjects and Themes:

                      Edition Identifiers:

                      Access and General Info:

                      • First Year Published: 2013
                      • Is Full Text Available: No
                      • Is The Book Public: No
                      • Access Status: No_ebook

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                      30GAAS and Related Materials

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                      “GAAS and Related Materials” Metadata:

                      • Title: GAAS and Related Materials
                      • Author:
                      • Language: English
                      • Publisher: ➤  World Scientific Publishing Co Pte Ltd
                      • Publish Date:

                      “GAAS and Related Materials” Subjects and Themes:

                      Edition Identifiers:

                      Access and General Info:

                      • First Year Published: 1994
                      • Is Full Text Available: No
                      • Is The Book Public: No
                      • Access Status: No_ebook

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                      31Semiconducting and insulating materials 1996

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                      “Semiconducting and insulating materials 1996” Metadata:

                      • Title: ➤  Semiconducting and insulating materials 1996
                      • Author: ➤  
                      • Language: English
                      • Number of Pages: Median: 379
                      • Publisher: ➤  Institute of Electrical and Electronics Engineers
                      • Publish Date:
                      • Publish Location: New York

                      “Semiconducting and insulating materials 1996” Subjects and Themes:

                      Edition Identifiers:

                      Access and General Info:

                      • First Year Published: 1996
                      • Is Full Text Available: No
                      • Is The Book Public: No
                      • Access Status: No_ebook

                      Online Access

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                        32The MOCVD challenge

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                        “The MOCVD challenge” Metadata:

                        • Title: The MOCVD challenge
                        • Author:
                        • Language: English
                        • Publisher: ➤  Hilger - Institute of Physics Pub.
                        • Publish Date:
                        • Publish Location: ➤  Bristol - Philadelphia - Bristol, [England]

                        “The MOCVD challenge” Subjects and Themes:

                        Edition Identifiers:

                        Access and General Info:

                        • First Year Published: 1900
                        • Is Full Text Available: No
                        • Is The Book Public: No
                        • Access Status: No_ebook

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                        33Semi Insulating III V Materials 1984

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                        “Semi Insulating III V Materials 1984” Metadata:

                        • Title: ➤  Semi Insulating III V Materials 1984
                        • Author:
                        • Language: English
                        • Number of Pages: Median: 512
                        • Publisher: Shiva - Shiva Publishing Ltd
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                        • Publish Location: Nantwich, England

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                          34SIMC-XI

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                          • Number of Pages: Median: 360
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                          • Publish Location: Piscataway, NJ

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                            35Technical digest 1985

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                            • Title: Technical digest 1985
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                            • Language: English
                            • Number of Pages: Median: 210
                            • Publisher: ➤  Institute of Electrical and Electronics Engineers
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                            • Publish Location: ➤  New York - New York, NY (345 E. 47th St., New York 10017)

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                            36Defect recognition in semiconductors before and after processing

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                            • Language: English
                            • Number of Pages: Median: 310
                            • Publisher: ➤  Adam Hilger - Institute of Physics Publishing
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                            • Publish Location: ➤  Philadelphia - Bristol, England

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                            • First Year Published: 1992
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                              37Modern GaAs processing methods

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                              • Number of Pages: Median: 437
                              • Publisher: Artech House
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                              • Publish Location: Boston

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                              • First Year Published: 1990
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                              38Proceedings

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                              • Language: English
                              • Number of Pages: Median: 116
                              • Publisher: IEEE
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                              • Publish Location: [Arlington, VA

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                              • First Year Published: 1997
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                                39Properties of aluminium gallium arsenide

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                                • Title: ➤  Properties of aluminium gallium arsenide
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                                • Language: English
                                • Number of Pages: Median: 325
                                • Publisher: IEE, INSPEC - INSPEC - IEE
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                                • Publish Location: London

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                                • First Year Published: 1993
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                                40GaAs technology and its impact on circuits and systems

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                                • Title: ➤  GaAs technology and its impact on circuits and systems
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                                • Language: English
                                • Number of Pages: Median: 457
                                • Publisher: ➤  P. Peregrinus Ltd. on behalf of the Institution of Electrical Engineers - Peregrinus on behalf of the Institution of Electrical Engineers.
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                                • Publish Location: London, U.K

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                                • First Year Published: 1989
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                                41Compound semiconductors 2001

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                                • Author: ➤  
                                • Language: English
                                • Number of Pages: Median: 855
                                • Publisher: ➤  Institute of Physics - Taylor & Francis
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                                • Publish Location: ➤  Philadelphia, Pa - Bristol, U.K

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                                • First Year Published: 2002
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                                  4221st Annual GaAs IC Symposium

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                                  • Title: 21st Annual GaAs IC Symposium
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                                  • Language: English
                                  • Number of Pages: Median: 310
                                  • Publisher: ➤  Institute of Electrical & Electronics Enginee - IEEE
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                                  • Publish Location: Piscataway, N.J

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                                  • First Year Published: 1999
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                                    43Gallium arsenide and related compounds 1988

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                                    • Title: ➤  Gallium arsenide and related compounds 1988
                                    • Authors: ➤  
                                    • Language: English
                                    • Number of Pages: Median: 649
                                    • Publisher: ➤  Taylor & Francis - Institute of Physics - Philadelphia, PA
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                                    • Publish Location: Bristol, England

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                                    • First Year Published: 1989
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                                      44InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond

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                                      • Title: ➤  InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond
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                                      • Language: English
                                      • Number of Pages: Median: 202
                                      • Publisher: Hartung-Gorre
                                      • Publish Date:
                                      • Publish Location: Konstanz

                                      “InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond” Subjects and Themes:

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                                      452003 International Symposium on Compound Semiconductors

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                                      • Language: English
                                      • Number of Pages: Median: 235
                                      • Publisher: IEEE
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                                      • Publish Location: Piscataway, N.J

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                                      46Crystal growth of device quality GaAs in space

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                                      • Title: ➤  Crystal growth of device quality GaAs in space
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                                      • Language: English
                                      • Publisher: The Administration
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                                      • Publish Location: Washington, D.C

                                      “Crystal growth of device quality GaAs in space” Subjects and Themes:

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                                      • First Year Published: 1984
                                      • Is Full Text Available: No
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                                        47A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 [mu]m

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                                        • Title: ➤  A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 [mu]m
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                                        • Language: English
                                        • Publisher: ➤  For sale by the National Technical Information Service - National Aeronautics and Space Administration
                                        • Publish Date:
                                        • Publish Location: ➤  [Springfield, Va - [Washington, DC]

                                        “A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 [mu]m” Subjects and Themes:

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                                        • First Year Published: 1988
                                        • Is Full Text Available: No
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                                          48Compound semiconductors 1999

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                                          • Language: English
                                          • Number of Pages: Median: 512
                                          • Publisher: ➤  Institute of Physics Pub. - Taylor & Francis
                                          • Publish Date:
                                          • Publish Location: Philadelphia - Bristol

                                          “Compound semiconductors 1999” Subjects and Themes:

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                                          "Research on heterostructures with below-2D dimensionality is predicted to be the most challenging research area in heterostructures for the next few decades."

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                                          • First Year Published: 2000
                                          • Is Full Text Available: No
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                                            49Semi-insulating III-V materials

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                                            • Authors: ➤  
                                            • Language: English
                                            • Number of Pages: Median: 610
                                            • Publisher: Taylor & Francis - A. Hilger
                                            • Publish Date:
                                            • Publish Location: ➤  Bristol, England - Philadelphia

                                            “Semi-insulating III-V materials” Subjects and Themes:

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                                            • First Year Published: 1988
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                                              50Cryogenic measurements of aerojet GaAs n-JFETs

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                                              • Title: ➤  Cryogenic measurements of aerojet GaAs n-JFETs
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                                              • Language: English
                                              • Publisher: ➤  National Technical Information Service, distributor - National Aeronautics and Space Administration, Ames Research Center
                                              • Publish Date:
                                              • Publish Location: ➤  [Springfield, Va - Moffett Field, Calif

                                              “Cryogenic measurements of aerojet GaAs n-JFETs” Subjects and Themes:

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                                              • First Year Published: 1993
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                                                Wiki

                                                Source: Wikipedia

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                                                Search Results from Wikipedia

                                                Gallium arsenide

                                                Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of

                                                Aluminium gallium arsenide

                                                Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs

                                                Gallium arsenide antimonide

                                                Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (GaAs(1-x)Sbx), is a ternary III-V semiconductor compound; x indicates

                                                Gallium arsenide phosphide

                                                Gallium arsenide phosphide (GaAs1−xPx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition

                                                Indium arsenide

                                                crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap

                                                Wafer (electronics)

                                                materials have also been employed. Gallium arsenide (GaAs), a III-V semiconductor produced via the Czochralski method, gallium nitride (GaN) and silicon carbide

                                                List of semiconductor materials

                                                aluminium gallium indium phosphide (AlInGaP)) alloy and Indium arsenide antimonide phosphide (InAsSbP). The properties of III-V compound semiconductors are

                                                Gallium nitride

                                                at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies

                                                Gallium

                                                melting points. It is also used in semiconductors, as a dopant in semiconductor substrates. The melting point of gallium, 29.7646 °C (85.5763 °F; 302.9146 K)

                                                Aluminium arsenide

                                                Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider


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