Explore: Junction Transistors

predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along with other components

junction bipolar transistors in 1954. The earliest diffused junction transistors were diffused-base transistors. These transistors still had alloy emitters

junction transistors, the MOSFET made it possible to build high-density integrated circuits, allowing the integration of more than 10,000 transistors

transistor which could be mass-produced easily while alloy-junction transistors had to be made individually. The first germanium planar transistors had

but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies

inventions in history. Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). The principle

controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need

Shockley, William (1949). "The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors". Bell System Technical Journal. 28 (3): 435–489

capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single

point-contact transistors differ from the slightly later junction transistors: The common base current gain (or α) of a point-contact transistor is usually