Explore: Indium Arsenide

Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium

epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors

other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide was first synthesized and studied by

Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a ternary III-V semiconductor compound with very nearly the same

Indium arsenide antimonide, also known as indium antimonide arsenide or InAsSb (InAs1-xSbx), is a ternary III-V semiconductor compound. It can be considered

Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide,

heat capacity. It can be alloyed with gallium arsenide to produce ternary and with indium gallium arsenide to form quaternary semiconductors. BAs has high

produced by Microsoft intended for use in quantum computing. It is an indium arsenide-aluminium hybrid device that admits superconductivity at low temperatures

binary (two elements, e.g. gallium(III) arsenide (GaAs)), ternary (three elements, e.g. indium gallium arsenide (InGaAs)) and quaternary alloys (four elements)