Explore: Indium Arsenide
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Source: The Open Library
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1Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
By N. Mohankumar
“Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications” Metadata:
- Title: ➤ Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
- Author: N. Mohankumar
- Language: English
- Number of Pages: Median: 134
- Publisher: ➤ CRC Press - Taylor & Francis Group
- Publish Date: 2021 - 2023
“Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications” Subjects and Themes:
- Subjects: ➤ Engineering - Modulation-doped field-effect transistors - Indium arsenide - Semiconductors - Terahertz technology - Transistors HEMT - Arséniure d'indium - Semi-conducteurs - Technologie térahertz - Semiconductor - SCIENCE - Physics - TECHNOLOGY - Electricity - Electronics - Circuits - General
Edition Identifiers:
- The Open Library ID: OL33927678M - OL49729490M - OL32524059M - OL33927598M - OL33927586M
- Online Computer Library Center (OCLC) ID: 1262437249
- All ISBNs: ➤ 9781000454550 - 9780367554149 - 9781003093428 - 9781000454567 - 9780367554156 - 100045455X - 0367554143 - 1003093426 - 0367554151 - 1000454568
Access and General Info:
- First Year Published: 2021
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
Downloads Are Not Available:
The book is not public therefore the download links will not allow the download of the entire book, however, borrowing the book online is available.
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2InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond
By Dieter Huber
“InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond” Metadata:
- Title: ➤ InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond
- Author: Dieter Huber
- Language: English
- Number of Pages: Median: 202
- Publisher: Hartung-Gorre
- Publish Date: 2002
- Publish Location: Konstanz
“InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond” Subjects and Themes:
- Subjects: Junction transistors - Indium arsenide - Indium phosphide - Gallium arsenide semiconductors - Bipolar transistors
Edition Identifiers:
- The Open Library ID: OL47872230M - OL24475365M
- Online Computer Library Center (OCLC) ID: 53128241
- Library of Congress Control Number (LCCN): 2002507342
- All ISBNs: 9783896498007 - 3896498002
Access and General Info:
- First Year Published: 2002
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Marketplaces
Find InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond at online marketplaces:
- Amazon: Audiable, Kindle and printed editions.
- Ebay: New & used books.