Explore: Indium Phosphide
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AI-Generated Overview About “indium-phosphide”:
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Source: The Open Library
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1Conference proceedings
By International Conference on Indium Phosphide and Related Materials (12th 2000 Williamsburg, Va.), IEEE Lasers & Electro-Optics Society, IEEE Electron Devices Society and Institute of Electrical and Electronics Engineers
“Conference proceedings” Metadata:
- Title: Conference proceedings
- Authors: ➤ International Conference on Indium Phosphide and Related Materials (12th 2000 Williamsburg, Va.)IEEE Lasers & Electro-Optics SocietyIEEE Electron Devices SocietyInstitute of Electrical and Electronics Engineers
- Language: English
- Number of Pages: Median: 582
- Publisher: IEEE Standards Office - IEEE
- Publish Date: 2000
- Publish Location: Piscataway, N.J
“Conference proceedings” Subjects and Themes:
- Subjects: ➤ Congresses - Electronics - Materials - Indium phosphide - Applied optics - Semi-conductors & super-conductors - Optoelectronic Devices - Semiconductors - Technology - Technology & Industrial Arts - Science/Mathematics - Electricity - Engineering - Electrical & Electronic - Optics - Electronics - Optoelectronics - Electronics - Semiconductors
Edition Identifiers:
- The Open Library ID: OL10999861M - OL10999863M - OL18140300M - OL10999862M
- Online Computer Library Center (OCLC) ID: 50667498
- All ISBNs: ➤ 0780363221 - 9780780363229 - 0780363213 - 9780780363205 - 9780780363212 - 0780363205
Author's Alternative Names:
"Institute of Electrical and Electronics Engineers", "IEEE", "Ieee" and "Institute of Electrical & Electronics En"Access and General Info:
- First Year Published: 2000
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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2Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells
By Victor G. Weizer
“Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells” Metadata:
- Title: ➤ Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells
- Author: Victor G. Weizer
- Language: English
- Publisher: ➤ National Technical Information Service, distributor - National Aeronautics and Space Administration
- Publish Date: 1993
- Publish Location: ➤ [Washington, DC] - [Springfield, Va
“Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL15387427M - OL17111051M - OL18065314M
Access and General Info:
- First Year Published: 1993
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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3InP and Related Compounds
By M O Manasreh
“InP and Related Compounds” Metadata:
- Title: InP and Related Compounds
- Author: M O Manasreh
- Language: English
- Number of Pages: Median: 850
- Publisher: ➤ Gordon and Breach Science - CRC
- Publish Date: 2000
- Publish Location: Amsterdam
“InP and Related Compounds” Subjects and Themes:
- Subjects: ➤ Materials, optical properties - Semiconductors - Indium phosphide - Optoelectronics - TECHNOLOGY & ENGINEERING - Mechanical
Edition Identifiers:
- The Open Library ID: OL3630022M - OL9106634M
- Online Computer Library Center (OCLC) ID: 45295702 - 1027756177
- Library of Congress Control Number (LCCN): 2002421694
- All ISBNs: 9056992643 - 9789056992644
First Setence:
"Research on InP and related compounds has been increasing exponentially in recent years."
Access and General Info:
- First Year Published: 2000
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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4Properties, processing and applications of indium phosphide
By T. P Pearsall and Thomas P. Pearsall
“Properties, processing and applications of indium phosphide” Metadata:
- Title: ➤ Properties, processing and applications of indium phosphide
- Authors: T. P PearsallThomas P. Pearsall
- Language: English
- Number of Pages: Median: 290
- Publisher: ➤ Institution of Electrical Engineers - INSPEC, the Institution of Electrical Engineers
- Publish Date: 2000
- Publish Location: London
“Properties, processing and applications of indium phosphide” Subjects and Themes:
- Subjects: ➤ Indium phosphide - Semiconductors - Optoelectronics - Materials science - Semi-conductors & super-conductors - Optoelectronic Devices - Technology - Science/Mathematics - Electronics - Semiconductors - Electronics - Optoelectronics - Phosphure d'indium - Semi-conducteurs - Optoélectronique - Semiconductor
Edition Identifiers:
- The Open Library ID: OL16957279M - OL9390484M
- Online Computer Library Center (OCLC) ID: 765133270 - 62204605
- All ISBNs: 9780852969496 - 085296949X
Access and General Info:
- First Year Published: 2000
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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5InP-based materials and devices
By Osamu Wada
“InP-based materials and devices” Metadata:
- Title: ➤ InP-based materials and devices
- Author: Osamu Wada
- Language: English
- Number of Pages: Median: 596
- Publisher: Wiley-Interscience - Wiley
- Publish Date: 1999
- Publish Location: New York
“InP-based materials and devices” Subjects and Themes:
- Subjects: ➤ Optoelectronics - Materials - Indium phosphide - Optoelectronic devices - Electromagnetic fields - Semiconductors
Edition Identifiers:
- The Open Library ID: OL376607M - OL7612952M
- Online Computer Library Center (OCLC) ID: 39605459
- Library of Congress Control Number (LCCN): 98038547
- All ISBNs: 9780471181910 - 0471181919
Access and General Info:
- First Year Published: 1999
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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6IPRM 1999 : Eleventh International Conference on Indium Phosphide and Related Materials
By International Conference on Indium Phosphide and Related Materials (11th 1999 Davos, Switzerland), Institute of Electrical and Electronics Engineers and Swiss Section Staff Ieee
“IPRM 1999 : Eleventh International Conference on Indium Phosphide and Related Materials” Metadata:
- Title: ➤ IPRM 1999 : Eleventh International Conference on Indium Phosphide and Related Materials
- Authors: ➤ International Conference on Indium Phosphide and Related Materials (11th 1999 Davos, Switzerland)Institute of Electrical and Electronics EngineersSwiss Section Staff Ieee
- Language: English
- Number of Pages: Median: 588
- Publisher: ➤ IEEE - Institute of Electrical & Electronics Enginee
- Publish Date: 1999
- Publish Location: Piscataway, N.J
“IPRM 1999 : Eleventh International Conference on Indium Phosphide and Related Materials” Subjects and Themes:
- Subjects: ➤ Congresses - Electronics - Materials - Indium phosphide - Applied optics - Materials science - Optoelectronic Devices - Semiconductors - Technology & Engineering - Technology & Industrial Arts - Science/Mathematics - Electricity - Electronics - Optoelectronics - Engineering - Electrical & Electronic - Material Science - Electronics - Semiconductors
Edition Identifiers:
- The Open Library ID: OL10999515M - OL18136003M
- Online Computer Library Center (OCLC) ID: 42426332
- All ISBNs: ➤ 9780780355620 - 0780355636 - 0780355644 - 9780780355644 - 0780355628 - 9780780355637
Author's Alternative Names:
"Institute of Electrical and Electronics Engineers", "IEEE", "Ieee" and "Institute of Electrical & Electronics En"Access and General Info:
- First Year Published: 1999
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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71998 International Conference on Indium Phosphide and Related Materials
By International Conference on Indium Phosphide and Related Materials (10th 1998 Tsukuba, Ibaraki, Japan), IEEE Electron Devices Society, Institute of Electrical and Electronics Engineers and IEEE Lasers & Electro-Optics Society
“1998 International Conference on Indium Phosphide and Related Materials” Metadata:
- Title: ➤ 1998 International Conference on Indium Phosphide and Related Materials
- Authors: ➤ International Conference on Indium Phosphide and Related Materials (10th 1998 Tsukuba, Ibaraki, Japan)IEEE Electron Devices SocietyInstitute of Electrical and Electronics EngineersIEEE Lasers & Electro-Optics Society
- Language: English
- Number of Pages: Median: 825
- Publisher: ➤ Institute of Electrical & Electronics Enginee - Institute of Electrical and Electronics Engineers - IEEE Service Center
- Publish Date: 1998
- Publish Location: ➤ Piscataway, N.J - [New York, N.Y.]
“1998 International Conference on Indium Phosphide and Related Materials” Subjects and Themes:
- Subjects: ➤ Congresses - Electronics - Materials - Indium phosphide - Circuits & components - Electronic devices & materials - Electrical Properties Of Materials - Electronic Apparatus And Devices - Technology - Technology & Industrial Arts - Science/Mathematics - Electricity - Electronics - Microelectronics - Engineering - Electrical & Electronic - Reference
Edition Identifiers:
- The Open Library ID: OL10999128M - OL17699586M
- Online Computer Library Center (OCLC) ID: 39683812
- All ISBNs: ➤ 0780342216 - 0780342224 - 9780780342217 - 0780342208 - 9780780342224 - 9780780342200
Author's Alternative Names:
"IEEE", "Ieee", "Institute of Electrical and Electronics Engineers" and "Institute of Electrical & Electronics En"Access and General Info:
- First Year Published: 1998
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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8InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond
By Dieter Huber
“InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond” Metadata:
- Title: ➤ InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond
- Author: Dieter Huber
- Language: English
- Number of Pages: Median: 202
- Publisher: Hartung-Gorre
- Publish Date: 2002
- Publish Location: Konstanz
“InP/InGaAs single hetero-junction bipolar transistors for integrated photoreceivers operating at 40 Gb/s and beyond” Subjects and Themes:
- Subjects: Junction transistors - Indium arsenide - Indium phosphide - Gallium arsenide semiconductors - Bipolar transistors
Edition Identifiers:
- The Open Library ID: OL47872230M - OL24475365M
- Online Computer Library Center (OCLC) ID: 53128241
- Library of Congress Control Number (LCCN): 2002507342
- All ISBNs: 9783896498007 - 3896498002
Access and General Info:
- First Year Published: 2002
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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91997 International Conference on Indium Phosphide and Related Materials
By International Conference on Indium Phosphide and Related Materials (9th 1997 Hyannis, Cape Cod, Mass.), IEEE Electron Devices Society, Institute of Electrical and Electronics Engineers and IEEE Lasers & Electro-Optics Society
“1997 International Conference on Indium Phosphide and Related Materials” Metadata:
- Title: ➤ 1997 International Conference on Indium Phosphide and Related Materials
- Authors: ➤ International Conference on Indium Phosphide and Related Materials (9th 1997 Hyannis, Cape Cod, Mass.)IEEE Electron Devices SocietyInstitute of Electrical and Electronics EngineersIEEE Lasers & Electro-Optics Society
- Language: English
- Number of Pages: Median: 686
- Publisher: ➤ Institute of Electrical & Electronics Enginee - IEEE Service Center - Institute of Electrical and Electronics Engineers
- Publish Date: 1997
- Publish Location: ➤ Piscataway, N.J - [New York, N.Y.]
“1997 International Conference on Indium Phosphide and Related Materials” Subjects and Themes:
- Subjects: ➤ Congresses - Electronics - Materials - Indium phosphide - Circuits & components - Electronic devices & materials - Electronic Circuits - Microelectronics - Technology - Technology & Industrial Arts - Science/Mathematics - Electricity - Electronics - Microelectronics - Electronics - Optoelectronics - Engineering - Electrical & Electronic - Indium
Edition Identifiers:
- The Open Library ID: OL18099933M - OL10999067M
- Online Computer Library Center (OCLC) ID: 37194459
- All ISBNs: ➤ 0780338987 - 9780780338982 - 9780780338999 - 0780339002 - 9780780339002 - 0780338995
Author's Alternative Names:
"Ieee", "IEEE", "Institute of Electrical and Electronics Engineers" and "Institute of Electrical & Electronics En"Access and General Info:
- First Year Published: 1997
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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10Advanced power systems for EOS
By Sheila G. Bailey
“Advanced power systems for EOS” Metadata:
- Title: Advanced power systems for EOS
- Author: Sheila G. Bailey
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration - National Technical Information Service [distributor]
- Publish Date: 1991
- Publish Location: ➤ [Springfield, Va.? - [Washington, DC]
“Advanced power systems for EOS” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL17105926M - OL17675869M
Access and General Info:
- First Year Published: 1991
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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11Advanced indium-phosphide waveguide Mach-Zehnder interferometer all-optical switches and wavelength converters
By Jürg Leuthold
“Advanced indium-phosphide waveguide Mach-Zehnder interferometer all-optical switches and wavelength converters” Metadata:
- Title: ➤ Advanced indium-phosphide waveguide Mach-Zehnder interferometer all-optical switches and wavelength converters
- Author: Jürg Leuthold
- Language: English
- Number of Pages: Median: 303
- Publisher: Hartung-Gorre
- Publish Date: 1999
- Publish Location: Konstanz
“Advanced indium-phosphide waveguide Mach-Zehnder interferometer all-optical switches and wavelength converters” Subjects and Themes:
- Subjects: Electronics - Materials - Indium phosphide - Semiconductors
Edition Identifiers:
- The Open Library ID: OL49993322M - OL20665664M
- Online Computer Library Center (OCLC) ID: 64647236
- All ISBNs: 3896494279 - 9783896494276
Access and General Info:
- First Year Published: 1999
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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12Properties of indium phosphide
By INSPEC (Information service)
“Properties of indium phosphide” Metadata:
- Title: Properties of indium phosphide
- Author: INSPEC (Information service)
- Language: English
- Number of Pages: Median: 495
- Publisher: INSPEC
- Publish Date: 1991
- Publish Location: New York - London
“Properties of indium phosphide” Subjects and Themes:
- Subjects: ➤ Electronics - Materials - Indium phosphide - Semiconductors - Électronique - Matériaux - Phosphure d'indium - Semi-conducteurs - Electrical & Computer Engineering - Engineering & Applied Sciences - Electrical Engineering
Edition Identifiers:
- The Open Library ID: OL45191500M - OL1646692M
- Online Computer Library Center (OCLC) ID: 62110754 - 62204808 - 23927756
- Library of Congress Control Number (LCCN): 91203333
- All ISBNs: 1591248256 - 9780852964910 - 9781591248255 - 0852964919
Access and General Info:
- First Year Published: 1991
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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13Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication
By Markus Blaser
“Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication” Metadata:
- Title: ➤ Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication
- Author: Markus Blaser
- Language: English
- Number of Pages: Median: 272
- Publisher: Hartung-Gorre
- Publish Date: 1996 - 1997
- Publish Location: Konstanz
“Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication” Subjects and Themes:
- Subjects: ➤ Integrated optics - Junction transistors - Indium phosphide - Optical communications - Equipment and supplies - Metal semiconductor field-effect transistors - Optical detectors - Gallium-arsenide semiconductors
Edition Identifiers:
- The Open Library ID: OL773803M - OL47880474M
- Online Computer Library Center (OCLC) ID: 56326358 - 38862339
- Library of Congress Control Number (LCCN): 97174013
- All ISBNs: 3896491377 - 9783896491374
Access and General Info:
- First Year Published: 1996
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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14Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells
By Raj K. Jain
“Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells” Metadata:
- Title: ➤ Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells
- Author: Raj K. Jain
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration - National Technical Information Service, distributor
- Publish Date: 1993
- Publish Location: ➤ Springfield, Va - [Washington, DC
“Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL14698711M - OL17679917M
Access and General Info:
- First Year Published: 1993
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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15Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP
By Sadao Adachi
“Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP” Metadata:
- Title: ➤ Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP
- Author: Sadao Adachi
- Language: English
- Number of Pages: Median: 318
- Publisher: Wiley
- Publish Date: 1992
- Publish Location: New York
“Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP” Subjects and Themes:
- Subjects: ➤ Indium phosphide - Gallium arsenide semiconductors - Indium alloys - Gallium arsenide - Semiconductors - Indium
Edition Identifiers:
- The Open Library ID: OL1705913M
- Online Computer Library Center (OCLC) ID: 25508858
- Library of Congress Control Number (LCCN): 92007286
- All ISBNs: 0471573299 - 9780471573296
Access and General Info:
- First Year Published: 1992
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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16Potential for use of Indium phosphide solar cells in the space radiation environment
By Irving Weinberg
“Potential for use of Indium phosphide solar cells in the space radiation environment” Metadata:
- Title: ➤ Potential for use of Indium phosphide solar cells in the space radiation environment
- Author: Irving Weinberg
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration, Lewis Research Center
- Publish Date: 1985
- Publish Location: [Cleveland, Ohio
“Potential for use of Indium phosphide solar cells in the space radiation environment” Subjects and Themes:
- Subjects: ➤ Estimates - Indium phosphide - Indium phosphides - Proton irradiation - Radiation effects - Research - Silicon - Solar cells
Edition Identifiers:
- The Open Library ID: OL17727139M
Access and General Info:
- First Year Published: 1985
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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17Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells
By I. B. Vaĭnberg
“Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells” Metadata:
- Title: ➤ Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells
- Author: I. B. Vaĭnberg
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration
- Publish Date: 1992
- Publish Location: [Washington, DC]
“Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL15360568M
Access and General Info:
- First Year Published: 1992
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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18Fifth International Conference on Indium Phosphide and Related Materials
By France) International Conference on Indium Phosphide and Related Materials (5th : 1993 : Paris
“Fifth International Conference on Indium Phosphide and Related Materials” Metadata:
- Title: ➤ Fifth International Conference on Indium Phosphide and Related Materials
- Author: ➤ France) International Conference on Indium Phosphide and Related Materials (5th : 1993 : Paris
- Language: English
- Number of Pages: Median: 738
- Publisher: Ieee
- Publish Date: 1993
“Fifth International Conference on Indium Phosphide and Related Materials” Subjects and Themes:
- Subjects: Electronics - Materials - Congresses - Indium phosphide
Edition Identifiers:
- The Open Library ID: OL10998441M
- Online Computer Library Center (OCLC) ID: 28193940
- Library of Congress Control Number (LCCN): 93077243
- All ISBNs: 9780780309937 - 0780309936
Access and General Info:
- First Year Published: 1993
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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19Indium Phosphide and Related Materials, 2002 International Conference
By Sweden) International Conference on Indium Phosphide and Related Materials (14th : 2002 : Stockholm
“Indium Phosphide and Related Materials, 2002 International Conference” Metadata:
- Title: ➤ Indium Phosphide and Related Materials, 2002 International Conference
- Author: ➤ Sweden) International Conference on Indium Phosphide and Related Materials (14th : 2002 : Stockholm
- Language: English
- Number of Pages: Median: 750
- Publisher: Ieee
- Publish Date: 2002
“Indium Phosphide and Related Materials, 2002 International Conference” Subjects and Themes:
- Subjects: ➤ Electronics - Materials - Congresses - Indium phosphide - Photonics - Epitaxy - Modulation-doped field-effect transistors - Quantum dots - Lasers
Edition Identifiers:
- The Open Library ID: OL11000291M
- Online Computer Library Center (OCLC) ID: 50264824
- All ISBNs: 9780780373204 - 0780373200
Access and General Info:
- First Year Published: 2002
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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20Status and future direction of InP solar cell research
By Jain, R. K.
“Status and future direction of InP solar cell research” Metadata:
- Title: ➤ Status and future direction of InP solar cell research
- Author: Jain, R. K.
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration - For sale by the National Technical Information Service
- Publish Date: 1992
- Publish Location: ➤ [Springfield, Va - [Washington, DC]
“Status and future direction of InP solar cell research” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL15359394M
Access and General Info:
- First Year Published: 1992
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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21Seventh International Conference on Indium Phosphide and Related Materials
By Japan) International Conference on Indium Phosphide and Related Materials (7th 1995 Sapporo-shi
“Seventh International Conference on Indium Phosphide and Related Materials” Metadata:
- Title: ➤ Seventh International Conference on Indium Phosphide and Related Materials
- Author: ➤ Japan) International Conference on Indium Phosphide and Related Materials (7th 1995 Sapporo-shi
- Language: English
- Number of Pages: Median: 869
- Publisher: ➤ IEEE Service Center - Institute of Electrical and Electronics Engineers
- Publish Date: 1995
- Publish Location: Piscataway, NJ - New York]
“Seventh International Conference on Indium Phosphide and Related Materials” Subjects and Themes:
- Subjects: Electronics - Materials - Congresses - Indium phosphide
Edition Identifiers:
- The Open Library ID: OL52620626M
- Online Computer Library Center (OCLC) ID: 32915854
- Library of Congress Control Number (LCCN): 94079424
- All ISBNs: 0780321480 - 9780780321489
Access and General Info:
- First Year Published: 1995
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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22InP HBTs
By B. Jalali
“InP HBTs” Metadata:
- Title: InP HBTs
- Author: B. Jalali
- Language: English
- Number of Pages: Median: 421
- Publisher: Artech House
- Publish Date: 1995
- Publish Location: Boston
“InP HBTs” Subjects and Themes:
- Subjects: Indium phosphide - Bipolar transistors - Field-effect transistors - Bipolar integrated circuits
Edition Identifiers:
- The Open Library ID: OL1110318M
- Online Computer Library Center (OCLC) ID: 31172773
- Library of Congress Control Number (LCCN): 94036071
- All ISBNs: 0890067244 - 9780890067246
Access and General Info:
- First Year Published: 1995
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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232003 International Conference [on] Indium Phosphide and Related Materials
By Calif.) International Conference on Indium Phosphide and Related Materials (15th 2003 Santa Barbara
“2003 International Conference [on] Indium Phosphide and Related Materials” Metadata:
- Title: ➤ 2003 International Conference [on] Indium Phosphide and Related Materials
- Author: ➤ Calif.) International Conference on Indium Phosphide and Related Materials (15th 2003 Santa Barbara
- Language: English
- Number of Pages: Median: 578
- Publisher: IEEE
- Publish Date: 2003
- Publish Location: Piscataway, N.J
“2003 International Conference [on] Indium Phosphide and Related Materials” Subjects and Themes:
- Subjects: ➤ Electronics - Congresses - Materials - Indium phosphide - Photonics - Epitaxy - Modulation-doped field-effect transistors - Quantum dots - Lasers
Edition Identifiers:
- The Open Library ID: OL45414693M
- Online Computer Library Center (OCLC) ID: 52328778
- All ISBNs: 9780780377042 - 0780377044
Access and General Info:
- First Year Published: 2003
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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24Phase analysis and crystal chemistry of some transition metal-indium-phosphorus systems
By Margaretha Andersson-Søderberg
“Phase analysis and crystal chemistry of some transition metal-indium-phosphorus systems” Metadata:
- Title: ➤ Phase analysis and crystal chemistry of some transition metal-indium-phosphorus systems
- Author: Margaretha Andersson-Søderberg
- Language: English
- Number of Pages: Median: 28
- Publisher: ➤ Distributor, Almqvist & Wiksell International - Uppsala University
- Publish Date: 1992
- Publish Location: Stockholm, Sweden - Uppsala
“Phase analysis and crystal chemistry of some transition metal-indium-phosphorus systems” Subjects and Themes:
Edition Identifiers:
- The Open Library ID: OL57018545M
- Online Computer Library Center (OCLC) ID: 29300106
- All ISBNs: 9789155429218 - 9155429211
Access and General Info:
- First Year Published: 1992
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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25Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design
By Alex Huber
“Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design” Metadata:
- Title: ➤ Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design
- Author: Alex Huber
- Language: English
- Number of Pages: Median: 170
- Publisher: Hartung-Gorre
- Publish Date: 2000
- Publish Location: Konstanz
“Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design” Subjects and Themes:
- Subjects: ➤ Radio circuits - Indium phosphide - Gallium arsenide semiconductors - Bipolar transistors - Design and construction
Edition Identifiers:
- The Open Library ID: OL30135396M
- Library of Congress Control Number (LCCN): 00418545
- All ISBNs: 9783896495990 - 3896495992
Access and General Info:
- First Year Published: 2000
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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26An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits
By Iwan Schnyder
“An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits” Metadata:
- Title: ➤ An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits
- Author: Iwan Schnyder
- Language: English
- Number of Pages: Median: 267
- Publisher: Hartung-Gorre Verlag
- Publish Date: 2005
- Publish Location: Konstanz
“An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits” Subjects and Themes:
- Subjects: Bipolar transistors - Design and construction - Indium phosphide - Transistors
Edition Identifiers:
- The Open Library ID: OL31705904M
- Library of Congress Control Number (LCCN): 2006356171
- All ISBNs: 3866280009 - 9783866280007
Access and General Info:
- First Year Published: 2005
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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27Indium phosphide and related materials
By Avishay Katz
“Indium phosphide and related materials” Metadata:
- Title: ➤ Indium phosphide and related materials
- Author: Avishay Katz
- Language: English
- Number of Pages: Median: 448
- Publisher: ➤ Artech House - Artech House Publishers
- Publish Date: 1992
- Publish Location: Boston
“Indium phosphide and related materials” Subjects and Themes:
- Subjects: Electronics - Materials - Indium phosphide - Semiconductors
Edition Identifiers:
- The Open Library ID: OL19018865M
- Online Computer Library Center (OCLC) ID: 24378057
- Library of Congress Control Number (LCCN): 91029592
- All ISBNs: 0890065128 - 9780890065129
Access and General Info:
- First Year Published: 1992
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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28Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits
By Urs Hammer
“Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits” Metadata:
- Title: ➤ Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits
- Author: Urs Hammer
- Language: English
- Number of Pages: Median: 265
- Publisher: Hartung-Gorre
- Publish Date: 2010
- Publish Location: Konstanz
“Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits” Subjects and Themes:
- Subjects: ➤ Very high speed integrated circuits - Digital integrated circuits - Junction transistors - Indium phosphide - Bipolar transistors - Design and construction
Edition Identifiers:
- The Open Library ID: OL24882871M
- Library of Congress Control Number (LCCN): 2010395371
- All ISBNs: 9783866283015 - 3866283016
Access and General Info:
- First Year Published: 2010
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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29Indium phosphide and related materials : 13th IPRM
By International Conference on Indium Phosphide and Related Materials (13th 2001 Nara, Japan)
“Indium phosphide and related materials : 13th IPRM” Metadata:
- Title: ➤ Indium phosphide and related materials : 13th IPRM
- Author: ➤ International Conference on Indium Phosphide and Related Materials (13th 2001 Nara, Japan)
- Language: English
- Number of Pages: Median: 635
- Publisher: IEEE
- Publish Date: 2001
- Publish Location: Piscataway, N.J
“Indium phosphide and related materials : 13th IPRM” Subjects and Themes:
- Subjects: ➤ Congresses - Epitaxy - Photonics - Indium phosphide - Modulation-doped field-effect transistors - Materials - Lasers - Electronics - Quantum dots
Edition Identifiers:
- The Open Library ID: OL20524895M
- Online Computer Library Center (OCLC) ID: 47349297
- All ISBNs: 0780367014 - 9780780367012 - 9780780367005 - 0780367006
Access and General Info:
- First Year Published: 2001
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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3014th Indium Phosphide and Related Materials Conference : IPRM
By International Conference on Indium Phosphide and Related Materials (14th 2002 Stockholm, Sweden)
“14th Indium Phosphide and Related Materials Conference : IPRM” Metadata:
- Title: ➤ 14th Indium Phosphide and Related Materials Conference : IPRM
- Author: ➤ International Conference on Indium Phosphide and Related Materials (14th 2002 Stockholm, Sweden)
- Language: English
- Number of Pages: Median: 750
- Publisher: IEEE
- Publish Date: 2002
- Publish Location: Piscataway, N.J
“14th Indium Phosphide and Related Materials Conference : IPRM” Subjects and Themes:
- Subjects: ➤ Congresses - Epitaxy - Photonics - Indium phosphide - Modulation-doped field-effect transistors - Materials - Lasers - Electronics - Quantum dots
Edition Identifiers:
- The Open Library ID: OL20525206M
- Online Computer Library Center (OCLC) ID: 50264824
- All ISBNs: 0780373200 - 9780780373204
Access and General Info:
- First Year Published: 2002
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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31Eighth International Conference on Indium Phosphide and Related Materials, April 21-25, 1996, Convention Center "Stadtgarten" Schwäbisch Gmünd, Germany
By International Conference on Indium Phosphide and Related Materials (8th 1996 Germany)
“Eighth International Conference on Indium Phosphide and Related Materials, April 21-25, 1996, Convention Center "Stadtgarten" Schwäbisch Gmünd, Germany” Metadata:
- Title: ➤ Eighth International Conference on Indium Phosphide and Related Materials, April 21-25, 1996, Convention Center "Stadtgarten" Schwäbisch Gmünd, Germany
- Author: ➤ International Conference on Indium Phosphide and Related Materials (8th 1996 Germany)
- Language: English
- Number of Pages: Median: 785
- Publisher: ➤ IEEE Service Center - Institute of Electrical and Electronics Engineers
- Publish Date: 1996
- Publish Location: ➤ [New York, NY] - Piscataway, NJ
“Eighth International Conference on Indium Phosphide and Related Materials, April 21-25, 1996, Convention Center "Stadtgarten" Schwäbisch Gmünd, Germany” Subjects and Themes:
- Subjects: Congresses - Electronics - Materials - Indium phosphide
Edition Identifiers:
- The Open Library ID: OL18085650M
- Library of Congress Control Number (LCCN): 96075713
- All ISBNs: 9780780332836 - 0780332849 - 0780332830 - 9780780332843
Access and General Info:
- First Year Published: 1996
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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32Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells
By V. G. Weizer
“Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells” Metadata:
- Title: ➤ Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells
- Author: V. G. Weizer
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration - National Technical Information Service, distributor
- Publish Date: 1993
- Publish Location: ➤ [Springfield, Va - [Washington, DC]
“Non-destructive, ultra-low resistance, thermally stable contacts for use on shallow junction InP solar cells” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL14701873M
Access and General Info:
- First Year Published: 1993
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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33Sinterless contacts to shallow junction InP solar cells
By Victor G. Weizer
“Sinterless contacts to shallow junction InP solar cells” Metadata:
- Title: ➤ Sinterless contacts to shallow junction InP solar cells
- Author: Victor G. Weizer
- Language: English
- Publisher: ➤ For sale by the National Technical Information Service - National Aeronautics and Space Administration
- Publish Date: 1992
- Publish Location: ➤ [Washington, DC] - [Springfield, Va
“Sinterless contacts to shallow junction InP solar cells” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL15363404M
Access and General Info:
- First Year Published: 1992
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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34A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells
By Victor G. Weizer
“A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells” Metadata:
- Title: ➤ A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells
- Author: Victor G. Weizer
- Language: English
- Publisher: ➤ For sale by the National Technical Information Service - National Aeronautics and Space Administration
- Publish Date: 1991
- Publish Location: ➤ [Washington, DC] - [Springfield, Va
“A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL15357597M
Access and General Info:
- First Year Published: 1991
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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35The achievement of low contact resistance to indium phosphide
By Navid S. Fatemi
“The achievement of low contact resistance to indium phosphide” Metadata:
- Title: ➤ The achievement of low contact resistance to indium phosphide
- Author: Navid S. Fatemi
- Language: English
- Publisher: ➤ For sale by the National Technical Information Service - National Aeronautics and Space Administration
- Publish Date: 1992
- Publish Location: ➤ [Washington, DC - Springfield, Va
“The achievement of low contact resistance to indium phosphide” Subjects and Themes:
- Subjects: Indium phosphide - Nickel alloys
Edition Identifiers:
- The Open Library ID: OL14686791M
Access and General Info:
- First Year Published: 1992
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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36Texturing of InP surfaces for device applications
By Sheila G. Bailey
“Texturing of InP surfaces for device applications” Metadata:
- Title: ➤ Texturing of InP surfaces for device applications
- Author: Sheila G. Bailey
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration - National Technical Information Service, distributor
- Publish Date: 1993
- Publish Location: ➤ [Springfield, Va - [Washington, DC]
“Texturing of InP surfaces for device applications” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL14699626M
Access and General Info:
- First Year Published: 1993
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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37Materials aspects of indium phosphide
By NATO Workshop on Materials Aspects of Indium Phosphide (2nd 1983 Lancaster, England)
“Materials aspects of indium phosphide” Metadata:
- Title: ➤ Materials aspects of indium phosphide
- Author: ➤ NATO Workshop on Materials Aspects of Indium Phosphide (2nd 1983 Lancaster, England)
- Language: English
- Number of Pages: Median: 205
- Publisher: North-Holland
- Publish Date: 1983
- Publish Location: Amsterdam
“Materials aspects of indium phosphide” Subjects and Themes:
- Subjects: Indium phosphide - Congresses
Edition Identifiers:
- The Open Library ID: OL16097727M
Access and General Info:
- First Year Published: 1983
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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38Physical InP-based HBT models for ultimate digital circuit optimization
By José Miguel Ruiz Palmero
“Physical InP-based HBT models for ultimate digital circuit optimization” Metadata:
- Title: ➤ Physical InP-based HBT models for ultimate digital circuit optimization
- Author: José Miguel Ruiz Palmero
- Language: English
- Number of Pages: Median: 279
- Publisher: Hartung-Gorre
- Publish Date: 2006
- Publish Location: Konstanz
“Physical InP-based HBT models for ultimate digital circuit optimization” Subjects and Themes:
Edition Identifiers:
- The Open Library ID: OL16292544M
- Library of Congress Control Number (LCCN): 2007385696
- All ISBNs: 9783866281172 - 386628117X
Access and General Info:
- First Year Published: 2006
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
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39Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells
By Raj K. Jain
“Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells” Metadata:
- Title: ➤ Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells
- Author: Raj K. Jain
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration - For sale by the National Technical Information Service
- Publish Date: 1990
- Publish Location: ➤ [Washington, DC] - [Springfield, Va
“Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL15299856M
Access and General Info:
- First Year Published: 1990
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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40Effect of InAlAs window layer on efficiency of indium phosphide solar cells
By Raj K. Jain
“Effect of InAlAs window layer on efficiency of indium phosphide solar cells” Metadata:
- Title: ➤ Effect of InAlAs window layer on efficiency of indium phosphide solar cells
- Author: Raj K. Jain
- Language: English
- Publisher: ➤ National Aeronautics and Space Administration - For sale by the National Technical Information Service
- Publish Date: 1992
- Publish Location: ➤ [Washington, DC] - [Springfield, Va
“Effect of InAlAs window layer on efficiency of indium phosphide solar cells” Subjects and Themes:
- Subjects: Indium phosphide - Solar cells
Edition Identifiers:
- The Open Library ID: OL15366806M
Access and General Info:
- First Year Published: 1992
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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411996 8th International Conference on Indium Phosphide and Related Materials
By Institute of Electrical and Electronics Engineers
“1996 8th International Conference on Indium Phosphide and Related Materials” Metadata:
- Title: ➤ 1996 8th International Conference on Indium Phosphide and Related Materials
- Author: ➤ Institute of Electrical and Electronics Engineers
- Language: English
- Number of Pages: Median: 400
- Publisher: ➤ Institute of Electrical & Electronics Enginee
- Publish Date: 1996
“1996 8th International Conference on Indium Phosphide and Related Materials” Subjects and Themes:
- Subjects: Electronics - Materials - Congresses - Indium phosphide
Edition Identifiers:
- The Open Library ID: OL10998924M
- Online Computer Library Center (OCLC) ID: 34903267
- Library of Congress Control Number (LCCN): 96075713
- All ISBNs: 0780332849 - 9780780332843
Author's Alternative Names:
"Institute of Electrical & Electronics En", "Institute of Electrical and Electronics Engineers", "IEEE" and "Ieee"Access and General Info:
- First Year Published: 1996
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
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42Surface characterization study of InP(100) substrates
By Stuart Jamison Hoekje
“Surface characterization study of InP(100) substrates” Metadata:
- Title: ➤ Surface characterization study of InP(100) substrates
- Author: Stuart Jamison Hoekje
- Language: English
- Number of Pages: Median: 77
- Publish Date: 1990
“Surface characterization study of InP(100) substrates” Subjects and Themes:
- Subjects: Spectrum analysis - Indium phosphide - Surface chemistry
Edition Identifiers:
- The Open Library ID: OL33216850M
- Online Computer Library Center (OCLC) ID: 23535999
Access and General Info:
- First Year Published: 1990
- Is Full Text Available: Yes
- Is The Book Public: Yes
- Access Status: Public
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43A characterization of the chemical vapor deposition of gallium arsenide and indium phosphide in the hydride and chloride systems
By Douglas John Meyer
“A characterization of the chemical vapor deposition of gallium arsenide and indium phosphide in the hydride and chloride systems” Metadata:
- Title: ➤ A characterization of the chemical vapor deposition of gallium arsenide and indium phosphide in the hydride and chloride systems
- Author: Douglas John Meyer
- Language: English
- Number of Pages: Median: 205
- Publish Date: 1984
“A characterization of the chemical vapor deposition of gallium arsenide and indium phosphide in the hydride and chloride systems” Subjects and Themes:
- Subjects: ➤ Vapor-plating - Indium phosphide - Gallium arsenide semiconductors - Compound semiconductors
Edition Identifiers:
- The Open Library ID: OL24341484M
- Online Computer Library Center (OCLC) ID: 11959318
Access and General Info:
- First Year Published: 1984
- Is Full Text Available: Yes
- Is The Book Public: Yes
- Access Status: Public
Online Access
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- Borrowing from Open Library: Borrowing link
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Indium phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical
Aluminium gallium indium phosphide
Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction
Indium
of the lamp. Indium has many semiconductor-related applications. Some indium compounds, such as indium antimonide and indium phosphide, are semiconductors
Indium gallium phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used
Indium arsenide
photo-Dember emitter. Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants
Light-emitting diode
wafer to package, and wire bonding or flip chip mounting, perhaps using indium tin oxide, a transparent electrical conductor. In this case, the bond wire(s)
Multi-junction solar cell
35 eV. Indium gallium arsenide (In0.53Ga0.47As) is lattice matched to Indium Phosphide with a band gap of 0.74 eV. A quaternary alloy of indium gallium
Indium gallium arsenide phosphide
Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium
Heterojunction bipolar transistor
arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide / gallium arsenide, and indium phosphide / indium gallium
Sodium phosphide
soluble equivalent to "P3−". Indium phosphide, a semiconductor arises by treating in-situ generated "sodium phosphide" with indium(III) chloride in hot N