An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits - Info and Reading Options
By Iwan Schnyder
"An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits" was published by Hartung-Gorre Verlag in 2005 - Konstanz, it has 267 pages and the language of the book is English.
“An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits” Metadata:
- Title: ➤ An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits
- Author: Iwan Schnyder
- Language: English
- Number of Pages: 267
- Publisher: Hartung-Gorre Verlag
- Publish Date: 2005
- Publish Location: Konstanz
“An indium-phosphide double-heterojunction bipolar transistor technology for 80 Gb/s integrated circuits” Subjects and Themes:
- Subjects: Bipolar transistors - Design and construction - Indium phosphide - Transistors
Edition Specifications:
- Pagination: viii, 267 p.
Edition Identifiers:
- The Open Library ID: OL31705904M - OL24007532W
- Library of Congress Control Number (LCCN): 2006356171
- ISBN-10: 3866280009
- All ISBNs: 3866280009
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