Materials aspects of GaAs and InP based structures - Info and Reading Options
By V. Swaminathan
"Materials aspects of GaAs and InP based structures" was published by Prentice Hall in 1991 - Englewood Cliffs, N.J, it has 606 pages and the language of the book is English.
“Materials aspects of GaAs and InP based structures” Metadata:
- Title: ➤ Materials aspects of GaAs and InP based structures
- Author: V. Swaminathan
- Language: English
- Number of Pages: 606
- Publisher: Prentice Hall
- Publish Date: 1991
- Publish Location: Englewood Cliffs, N.J
- Dewey Decimal Classification: 621.381/52
- Library of Congress Classification: TK7871.85 .S937 1991TK7871.85.S937 1991
“Materials aspects of GaAs and InP based structures” Subjects and Themes:
- Subjects: ➤ Epitaxy - Gallium arsenide semiconductors - Materials - Semiconductors
Edition Specifications:
- Pagination: xvii, 606 p. :
Edition Identifiers:
- The Open Library ID: OL1880508M - OL4472854W
- Online Computer Library Center (OCLC) ID: 21972699
- Library of Congress Control Number (LCCN): 90041035
- ISBN-10: 0133468267
- All ISBNs: 0133468267
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