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Laser interferometry is useful for measuring the dissolution rate of thin polymer films. During the dissolution process, polymer in the glassy state is transported into a dilute solution. In some cases, a transition layer can be measured using laser interferometry. This layer is seen as a difference in reflected light intensity between the bare substrate and the maximum during dissolution. When PMMA dissolves in methyl ethyl ketone, the layer is not detectable below a polymer M subscript n of about 30,000. The layer becomes more pronounced as molecular weight of polymer increases.

Laser interferometry is useful for measuring the dissolution rate of thin polymer films. During the dissolution process, polymer in the glassy state is transported into a dilute solution. In some cases, a transition layer can be measured using laser interferometry. This layer is seen as a difference in reflected light intensity between the bare substrate and the maximum during dissolution. When PMMA dissolves in methyl ethyl ketone, the layer is not detectable below a polymer M subscript n of about 30,000. The layer becomes more pronounced as molecular weight of polymer increases.

This report describes the progress in the synthesis, characterization and spectroscopy of soluble polysilanes and germanes. It includes polymer structural studies, theoretical investigations of electronic structure and mechanistic studies of the photodecomposition. It also describes the potential of these materials as polymeric photoconductors, and as new materials for microlithography. The initial work on the nonlinear optical characteristics of these materials is also included. (sdw)

Ultrathin (0.9 -15.3 nm) poly(methyl methacrylate) (PMMA) films prepared by the Langmuir-Blodgett (LB) technique have been explored as high resolution electron beam resists. One eighth micron lines-and-spaces patterns have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool. The etch resistance of films with thicknesses greater than 4. 5 nm is sufficient to allow patterning of chromium film suitable for photomask fabrication. Monolayer PMMA films containing 5 mol% pyrenedodecanoic acid (PDA) as a probe were prepared by transfer to the substrate at different surface pressures and characterized by fluorescence spectroscopy. The ratio of excimer to monomer emission intensity has a maximum value at 10 dyn/cm, which may be related to a structural rearrangement in the film. Intrinsic bilayer PMMA films prepared at 1 and 19 dyn/cm have also been examined by transmission electron microscopy. The wrinkle-like surface topography observed in the 19 dyn/cm sample and not in the 1 dyn/cm sample suggests that the structure in the LB PMMA film depends upon the transfer pressure. Polymethyl methacrylate.

Ultrathin (0.9 -15.3 nm) poly(methyl methacrylate) (PMMA) films prepared by the Langmuir-Blodgett (LB) technique have been explored as high resolution electron beam resists. One eighth micron lines-and-spaces patterns have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool. The etch resistance of films with thicknesses greater than 4. 5 nm is sufficient to allow patterning of chromium film suitable for photomask fabrication. Monolayer PMMA films containing 5 mol% pyrenedodecanoic acid (PDA) as a probe were prepared by transfer to the substrate at different surface pressures and characterized by fluorescence spectroscopy. The ratio of excimer to monomer emission intensity has a maximum value at 10 dyn/cm, which may be related to a structural rearrangement in the film. Intrinsic bilayer PMMA films prepared at 1 and 19 dyn/cm have also been examined by transmission electron microscopy. The wrinkle-like surface topography observed in the 19 dyn/cm sample and not in the 1 dyn/cm sample suggests that the structure in the LB PMMA film depends upon the transfer pressure. Polymethyl methacrylate.

Ultrathin (0.9 -15.3 nm) poly(methyl methacrylate) (PMMA) films prepared by the Langmuir-Blodgett (LB) technique have been explored as high resolution electron beam resists. One eighth micron lines-and-spaces patterns have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool. The etch resistance of films with thicknesses greater than 4. 5 nm is sufficient to allow patterning of chromium film suitable for photomask fabrication. Monolayer PMMA films containing 5 mol% pyrenedodecanoic acid (PDA) as a probe were prepared by transfer to the substrate at different surface pressures and characterized by fluorescence spectroscopy. The ratio of excimer to monomer emission intensity has a maximum value at 10 dyn/cm, which may be related to a structural rearrangement in the film. Intrinsic bilayer PMMA films prepared at 1 and 19 dyn/cm have also been examined by transmission electron microscopy. The wrinkle-like surface topography observed in the 19 dyn/cm sample and not in the 1 dyn/cm sample suggests that the structure in the LB PMMA film depends upon the transfer pressure. Polymethyl methacrylate.

Ultrathin (0.9 -15.3 nm) poly(methyl methacrylate) (PMMA) films prepared by the Langmuir-Blodgett (LB) technique have been explored as high resolution electron beam resists. One eighth micron lines-and-spaces patterns have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool. The etch resistance of films with thicknesses greater than 4. 5 nm is sufficient to allow patterning of chromium film suitable for photomask fabrication. Monolayer PMMA films containing 5 mol% pyrenedodecanoic acid (PDA) as a probe were prepared by transfer to the substrate at different surface pressures and characterized by fluorescence spectroscopy. The ratio of excimer to monomer emission intensity has a maximum value at 10 dyn/cm, which may be related to a structural rearrangement in the film. Intrinsic bilayer PMMA films prepared at 1 and 19 dyn/cm have also been examined by transmission electron microscopy. The wrinkle-like surface topography observed in the 19 dyn/cm sample and not in the 1 dyn/cm sample suggests that the structure in the LB PMMA film depends upon the transfer pressure. Polymethyl methacrylate.

Ultrathin (0.9 -15.3 nm) poly(methyl methacrylate) (PMMA) films prepared by the Langmuir-Blodgett (LB) technique have been explored as high resolution electron beam resists. One eighth micron lines-and-spaces patterns have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool. The etch resistance of films with thicknesses greater than 4. 5 nm is sufficient to allow patterning of chromium film suitable for photomask fabrication. Monolayer PMMA films containing 5 mol% pyrenedodecanoic acid (PDA) as a probe were prepared by transfer to the substrate at different surface pressures and characterized by fluorescence spectroscopy. The ratio of excimer to monomer emission intensity has a maximum value at 10 dyn/cm, which may be related to a structural rearrangement in the film. Intrinsic bilayer PMMA films prepared at 1 and 19 dyn/cm have also been examined by transmission electron microscopy. The wrinkle-like surface topography observed in the 19 dyn/cm sample and not in the 1 dyn/cm sample suggests that the structure in the LB PMMA film depends upon the transfer pressure. Polymethyl methacrylate.

The aim throughout this work has been to produce and characterize resist systems with enhanced sensitivity, resolution, and etch resistance. New polymers and polymer systems were evaluated as e-beam and x-ray resists using gamma radiation, flood exposure to electrons, synchrotron radiation, and e-beam patterning. The systems investigated have included copolymers and blends. In particular, reactive plasticizers were found to impart high sensitivity to negative-working resists with good resolution. Because of the overwhelming importance of the development step in producing high resolution patterns, dissolution rate measurements were refined and applied to a number of problems. As far as resistance to ion-assisted plasma etching is concerned, our studies have established the importance of conditions including flow rates, power density, pressure, etc.

The aim throughout this work has been to produce and characterize resist systems with enhanced sensitivity, resolution, and etch resistance. New polymers and polymer systems were evaluated as e-beam and x-ray resists using gamma radiation, flood exposure to electrons, synchrotron radiation, and e-beam patterning. The systems investigated have included copolymers and blends. In particular, reactive plasticizers were found to impart high sensitivity to negative-working resists with good resolution. Because of the overwhelming importance of the development step in producing high resolution patterns, dissolution rate measurements were refined and applied to a number of problems. As far as resistance to ion-assisted plasma etching is concerned, our studies have established the importance of conditions including flow rates, power density, pressure, etc.

The aim throughout this work has been to produce and characterize resist systems with enhanced sensitivity, resolution, and etch resistance. New polymers and polymer systems were evaluated as e-beam and x-ray resists using gamma radiation, flood exposure to electrons, synchrotron radiation, and e-beam patterning. The systems investigated have included copolymers and blends. In particular, reactive plasticizers were found to impart high sensitivity to negative-working resists with good resolution. Because of the overwhelming importance of the development step in producing high resolution patterns, dissolution rate measurements were refined and applied to a number of problems. As far as resistance to ion-assisted plasma etching is concerned, our studies have established the importance of conditions including flow rates, power density, pressure, etc.

The aim throughout this work has been to produce and characterize resist systems with enhanced sensitivity, resolution, and etch resistance. New polymers and polymer systems were evaluated as e-beam and x-ray resists using gamma radiation, flood exposure to electrons, synchrotron radiation, and e-beam patterning. The systems investigated have included copolymers and blends. In particular, reactive plasticizers were found to impart high sensitivity to negative-working resists with good resolution. Because of the overwhelming importance of the development step in producing high resolution patterns, dissolution rate measurements were refined and applied to a number of problems. As far as resistance to ion-assisted plasma etching is concerned, our studies have established the importance of conditions including flow rates, power density, pressure, etc.

To improve pattern fidelity of electron beam lithography in the nanometer regime a new class of ultrathin resist (less than 20 nm) has been investigated. Such films can be exposed with very low energy (less than 1 keV) electrons to virtually eliminate proximity effects or, at conventional energies, to allow easier proximity effect correction. In this paper we have investigated the lithographic performance of LB PMMA films with thicknesses ranging from 0.85 nm (one monolayer) to 7.7 nm (nine monolayer) exposed with different electron beam energies. Two types of defects, with sizes less than 20 nm, have be observed in the films after exposure and pattern transfer into chromium. The first type, observed only in films less than seven layers thick, was uniformly distributed over the sample; the second type was only observed around the exposed regions for films thicker than nine layers. Comparisons are made with Monte Carlo simulation.

To improve pattern fidelity of electron beam lithography in the nanometer regime a new class of ultrathin resist (less than 20 nm) has been investigated. Such films can be exposed with very low energy (less than 1 keV) electrons to virtually eliminate proximity effects or, at conventional energies, to allow easier proximity effect correction. In this paper we have investigated the lithographic performance of LB PMMA films with thicknesses ranging from 0.85 nm (one monolayer) to 7.7 nm (nine monolayer) exposed with different electron beam energies. Two types of defects, with sizes less than 20 nm, have be observed in the films after exposure and pattern transfer into chromium. The first type, observed only in films less than seven layers thick, was uniformly distributed over the sample; the second type was only observed around the exposed regions for films thicker than nine layers. Comparisons are made with Monte Carlo simulation.

To improve pattern fidelity of electron beam lithography in the nanometer regime a new class of ultrathin resist (less than 20 nm) has been investigated. Such films can be exposed with very low energy (less than 1 keV) electrons to virtually eliminate proximity effects or, at conventional energies, to allow easier proximity effect correction. In this paper we have investigated the lithographic performance of LB PMMA films with thicknesses ranging from 0.85 nm (one monolayer) to 7.7 nm (nine monolayer) exposed with different electron beam energies. Two types of defects, with sizes less than 20 nm, have be observed in the films after exposure and pattern transfer into chromium. The first type, observed only in films less than seven layers thick, was uniformly distributed over the sample; the second type was only observed around the exposed regions for films thicker than nine layers. Comparisons are made with Monte Carlo simulation.

To improve pattern fidelity of electron beam lithography in the nanometer regime a new class of ultrathin resist (less than 20 nm) has been investigated. Such films can be exposed with very low energy (less than 1 keV) electrons to virtually eliminate proximity effects or, at conventional energies, to allow easier proximity effect correction. In this paper we have investigated the lithographic performance of LB PMMA films with thicknesses ranging from 0.85 nm (one monolayer) to 7.7 nm (nine monolayer) exposed with different electron beam energies. Two types of defects, with sizes less than 20 nm, have be observed in the films after exposure and pattern transfer into chromium. The first type, observed only in films less than seven layers thick, was uniformly distributed over the sample; the second type was only observed around the exposed regions for films thicker than nine layers. Comparisons are made with Monte Carlo simulation.

To improve pattern fidelity of electron beam lithography in the nanometer regime a new class of ultrathin resist (less than 20 nm) has been investigated. Such films can be exposed with very low energy (less than 1 keV) electrons to virtually eliminate proximity effects or, at conventional energies, to allow easier proximity effect correction. In this paper we have investigated the lithographic performance of LB PMMA films with thicknesses ranging from 0.85 nm (one monolayer) to 7.7 nm (nine monolayer) exposed with different electron beam energies. Two types of defects, with sizes less than 20 nm, have be observed in the films after exposure and pattern transfer into chromium. The first type, observed only in films less than seven layers thick, was uniformly distributed over the sample; the second type was only observed around the exposed regions for films thicker than nine layers. Comparisons are made with Monte Carlo simulation.

To improve pattern fidelity of electron beam lithography in the nanometer regime a new class of ultrathin resist (less than 20 nm) has been investigated. Such films can be exposed with very low energy (less than 1 keV) electrons to virtually eliminate proximity effects or, at conventional energies, to allow easier proximity effect correction. In this paper we have investigated the lithographic performance of LB PMMA films with thicknesses ranging from 0.85 nm (one monolayer) to 7.7 nm (nine monolayer) exposed with different electron beam energies. Two types of defects, with sizes less than 20 nm, have be observed in the films after exposure and pattern transfer into chromium. The first type, observed only in films less than seven layers thick, was uniformly distributed over the sample; the second type was only observed around the exposed regions for films thicker than nine layers. Comparisons are made with Monte Carlo simulation.

To improve pattern fidelity of electron beam lithography in the nanometer regime a new class of ultrathin resist (less than 20 nm) has been investigated. Such films can be exposed with very low energy (less than 1 keV) electrons to virtually eliminate proximity effects or, at conventional energies, to allow easier proximity effect correction. In this paper we have investigated the lithographic performance of LB PMMA films with thicknesses ranging from 0.85 nm (one monolayer) to 7.7 nm (nine monolayer) exposed with different electron beam energies. Two types of defects, with sizes less than 20 nm, have be observed in the films after exposure and pattern transfer into chromium. The first type, observed only in films less than seven layers thick, was uniformly distributed over the sample; the second type was only observed around the exposed regions for films thicker than nine layers. Comparisons are made with Monte Carlo simulation.

Ultrathin (14 - 22 nm) poly(methacrylate) (PMMA) films prepared by both spin casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spin casting have been explored as high-resolution electron beam resists. One-eighth micron lines-and-spaces patterns have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask production. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac films are only a few per centimeters squared, considerably less than the density in spin-cast PMMA films of comparable thickness. Reprints.

Ultrathin (14 - 22 nm) poly(methacrylate) (PMMA) films prepared by both spin casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spin casting have been explored as high-resolution electron beam resists. One-eighth micron lines-and-spaces patterns have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask production. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac films are only a few per centimeters squared, considerably less than the density in spin-cast PMMA films of comparable thickness. Reprints.

The design of resist materials for microlithography has become more and more complex due to the ever increasing number of demands that are placed on these materials . In particular it is difficult to introduce new features or new chemistries in resists while still maintaining the 'look and feel' and traditional behavior of well established materials. This presentation focuses on the chemistry of resists based on chemically amplified processes that are readily implemented in novel high performance materials. Both positive-tone and negative-tone imaging schemes are considered as is the development of environmentally friendly materials that obviate the use of organic solvents and can be coated and processed in a fully aqueous system. The importance of a full understanding of the the reactions mechanisms that regulate the performance of the resist is underlined.

The design of resist materials for microlithography has become more and more complex due to the ever increasing number of demands that are placed on these materials . In particular it is difficult to introduce new features or new chemistries in resists while still maintaining the 'look and feel' and traditional behavior of well established materials. This presentation focuses on the chemistry of resists based on chemically amplified processes that are readily implemented in novel high performance materials. Both positive-tone and negative-tone imaging schemes are considered as is the development of environmentally friendly materials that obviate the use of organic solvents and can be coated and processed in a fully aqueous system. The importance of a full understanding of the the reactions mechanisms that regulate the performance of the resist is underlined.

The design of resist materials for microlithography has become more and more complex due to the ever increasing number of demands that are placed on these materials . In particular it is difficult to introduce new features or new chemistries in resists while still maintaining the 'look and feel' and traditional behavior of well established materials. This presentation focuses on the chemistry of resists based on chemically amplified processes that are readily implemented in novel high performance materials. Both positive-tone and negative-tone imaging schemes are considered as is the development of environmentally friendly materials that obviate the use of organic solvents and can be coated and processed in a fully aqueous system. The importance of a full understanding of the the reactions mechanisms that regulate the performance of the resist is underlined.

The design of resist materials for microlithography has become more and more complex due to the ever increasing number of demands that are placed on these materials . In particular it is difficult to introduce new features or new chemistries in resists while still maintaining the 'look and feel' and traditional behavior of well established materials. This presentation focuses on the chemistry of resists based on chemically amplified processes that are readily implemented in novel high performance materials. Both positive-tone and negative-tone imaging schemes are considered as is the development of environmentally friendly materials that obviate the use of organic solvents and can be coated and processed in a fully aqueous system. The importance of a full understanding of the the reactions mechanisms that regulate the performance of the resist is underlined.

The design of resist materials for microlithography has become more and more complex due to the ever increasing number of demands that are placed on these materials . In particular it is difficult to introduce new features or new chemistries in resists while still maintaining the 'look and feel' and traditional behavior of well established materials. This presentation focuses on the chemistry of resists based on chemically amplified processes that are readily implemented in novel high performance materials. Both positive-tone and negative-tone imaging schemes are considered as is the development of environmentally friendly materials that obviate the use of organic solvents and can be coated and processed in a fully aqueous system. The importance of a full understanding of the the reactions mechanisms that regulate the performance of the resist is underlined.

The design of resist materials for microlithography has become more and more complex due to the ever increasing number of demands that are placed on these materials . In particular it is difficult to introduce new features or new chemistries in resists while still maintaining the 'look and feel' and traditional behavior of well established materials. This presentation focuses on the chemistry of resists based on chemically amplified processes that are readily implemented in novel high performance materials. Both positive-tone and negative-tone imaging schemes are considered as is the development of environmentally friendly materials that obviate the use of organic solvents and can be coated and processed in a fully aqueous system. The importance of a full understanding of the the reactions mechanisms that regulate the performance of the resist is underlined.

The design of resist materials for microlithography has become more and more complex due to the ever increasing number of demands that are placed on these materials . In particular it is difficult to introduce new features or new chemistries in resists while still maintaining the 'look and feel' and traditional behavior of well established materials. This presentation focuses on the chemistry of resists based on chemically amplified processes that are readily implemented in novel high performance materials. Both positive-tone and negative-tone imaging schemes are considered as is the development of environmentally friendly materials that obviate the use of organic solvents and can be coated and processed in a fully aqueous system. The importance of a full understanding of the the reactions mechanisms that regulate the performance of the resist is underlined.

Several new polymers, copolymers, and polyfunctional crosslinkers that can be used to formulate chemically amplified resist materials have been prepared, characterized, and tested in combination with suitable photoactive compounds. All of the materials operate on the basis of acid catalyzed processes involving alkylation, dehydration, or isomarization reactions. Sensitivities below 0.1 mJ/cm2 have been measured with deep-UV irradiation, while most of the materials also operate very effectively with E-beam or X-ray exposure. The resist materials are useful in dry development and top-surface imaging processes. Depending on the nature of the matrix polymer and the design of the resist material, both positive and negative tone images can be obtained. Dry development using an oxygen plasma can be achieved following selective silylation of the resists after exposure and post-baking. those areas of the films that are silylated resist etching by the oxygen plasma providing access to high resolution images that also benefit from the high sensitivity of the chemically amplified resists.

Several new polymers, copolymers, and polyfunctional crosslinkers that can be used to formulate chemically amplified resist materials have been prepared, characterized, and tested in combination with suitable photoactive compounds. All of the materials operate on the basis of acid catalyzed processes involving alkylation, dehydration, or isomarization reactions. Sensitivities below 0.1 mJ/cm2 have been measured with deep-UV irradiation, while most of the materials also operate very effectively with E-beam or X-ray exposure. The resist materials are useful in dry development and top-surface imaging processes. Depending on the nature of the matrix polymer and the design of the resist material, both positive and negative tone images can be obtained. Dry development using an oxygen plasma can be achieved following selective silylation of the resists after exposure and post-baking. those areas of the films that are silylated resist etching by the oxygen plasma providing access to high resolution images that also benefit from the high sensitivity of the chemically amplified resists.

Criteria for choosing solvents for coatings and dissolution processes in microlithography include: a) Thermodynamic interaction measured by viscosity level, intrinsic viscosity, or swelling, b) Dynamic interaction (transport) characterized by a diffusivity or some other rate process, such as rate of dissolution, c) Volatility, control of removal, since the solvent is not a part of the final product, d) Safety (flammability and health hazards), and e) Cost. Solvents based on ethylene oxide derivatives which contain both ether and ester linkages have been very useful in lithographic applications. However, health hazards such as fetatoxicity may be involved with such materials. In this work we found that PMAC (1-methoxy-2 propanol, acetate) and EEP (ethyl 3-ethoxy propionate) are suitable replacements for two popular ethylene oxide-based solvents, namely, MCA (2-methoxyethyl acetate) and ECA (2-ethoxyethyl acetate).

Criteria for choosing solvents for coatings and dissolution processes in microlithography include: a) Thermodynamic interaction measured by viscosity level, intrinsic viscosity, or swelling, b) Dynamic interaction (transport) characterized by a diffusivity or some other rate process, such as rate of dissolution, c) Volatility, control of removal, since the solvent is not a part of the final product, d) Safety (flammability and health hazards), and e) Cost. Solvents based on ethylene oxide derivatives which contain both ether and ester linkages have been very useful in lithographic applications. However, health hazards such as fetatoxicity may be involved with such materials. In this work we found that PMAC (1-methoxy-2 propanol, acetate) and EEP (ethyl 3-ethoxy propionate) are suitable replacements for two popular ethylene oxide-based solvents, namely, MCA (2-methoxyethyl acetate) and ECA (2-ethoxyethyl acetate).

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.

Ultrathin (14 to 22 nm) poly(methylmethacrylate) (PMMA) films prepared by both spin-casting and Langmuir-Blodgett (LB) techniques and novolac films prepared by spincasting have been explored as high resolution electron- beam resists. One-eighth micron lines-and-spaces patterns (equal to the smallest beam diameter available) have been achieved by using a Perkin Elmer MEBES I pattern generation system as the exposure tool, and the definition of 45 nm features has recently been achieved by using a high resolution electron beam lithography system. The etch resistance of such films is sufficiently good to allow patterning of a chromium film suitable for photomask fabrication. The most surprising result has been that the pinhole densities in 14.3 nm LB PMMA film and 22 nm spin-cast novolac film are only a few per sq. cm., considerably lower than the density in spin-cast PMMA films of comparable thickness. Keywords: Polymethyl methacrylates.