"Memory Technology, Design, & Testing International Workshop" - Information and Links:

Memory Technology, Design, & Testing International Workshop - Info and Reading Options

"Memory Technology, Design, & Testing International Workshop" was published by IEEE Computer Society Pr in November 1998 - Piscataway, N.J., it has 150 pages and the language of the book is English.


“Memory Technology, Design, & Testing International Workshop” Metadata:

  • Title: ➤  Memory Technology, Design, & Testing International Workshop
  • Author: ➤  
  • Language: English
  • Number of Pages: 150
  • Publisher: IEEE Computer Society Pr
  • Publish Date:
  • Publish Location: Piscataway, N.J.

Edition Specifications:

  • Format: Paperback
  • Weight: 12.3 ounces
  • Dimensions: 10.8 x 8.5 x 0.3 inches

Edition Identifiers:

AI-generated Review of “Memory Technology, Design, & Testing International Workshop”:


"Memory Technology, Design, & Testing International Workshop" Description:

Open Data:

Annotation, The 14 papers in this collection from the August 2001 workshop are divided into five sessions on semiconductor memory design, BIST, redundancy and error control, fault models and multi-port SRAM testing, and verification and testing. Some of the topics are evaluation of redundancy analysis algorithms, a parallel approach for testing multi-port static random access memories, a low output resistance charge pump for flash memory programming, BIST-based bitfail mapping of an embedded DRAM, and an orthogonal transpose- RAM cell array architecture with an alternate bit-line to bit-line contact scheme. No subject index. c. Book News Inc

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