Explore: Transistors De Puissance
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Books Results
Source: The Open Library
The Open Library Search Results
Search results from The Open Library
1GaN transistors for efficient power conversion
By Alex Lidow
“GaN transistors for efficient power conversion” Metadata:
- Title: ➤ GaN transistors for efficient power conversion
- Author: Alex Lidow
- Language: English
- Number of Pages: Median: 272
- Publisher: ➤ Wiley & Sons, Incorporated, John - Wiley - Power Conversion Publications - Wiley & Sons, Limited, John
- Publish Date: 2012 - 2014 - 2019
- Publish Location: El Segundo, CA
“GaN transistors for efficient power conversion” Subjects and Themes:
- Subjects: ➤ Power electronics - Field-effect transistors - Gallium nitride - Transistors - Materials - Power transistors - Transistors à effet de champ - Matériaux - Transistors de puissance - Nitrure de gallium
Edition Identifiers:
- The Open Library ID: ➤ OL33636827M - OL33729066M - OL29437921M - OL33487153M - OL29241134M - OL27557360M - OL28720752M - OL39914825M - OL25289957M - OL29438015M
- Online Computer Library Center (OCLC) ID: 1097463060 - 776261257
- Library of Congress Control Number (LCCN): 2019017751 - 2014023079 - 2014014560 - 2011944839
- All ISBNs: ➤ 1119594405 - 9781119594406 - 1119594146 - 9780615569253 - 1119594421 - 0615569250 - 1306908272 - 9781118844762 - 1118844769 - 1118844777 - 9781118844786 - 1118844785 - 9781118844793 - 9781119594376 - 1118844793 - 9781119594420 - 9781119594147 - 9781306908276 - 9781118844779 - 1119594375
Access and General Info:
- First Year Published: 2012
- Is Full Text Available: No
- Is The Book Public: No
- Access Status: No_ebook
Online Access
Downloads Are Not Available:
The book is not public therefore the download links will not allow the download of the entire book, however, borrowing the book online is available.
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2Low power and low voltage circuit design with the FGMOS transistor
By Esther Rodriguez-Villegas
“Low power and low voltage circuit design with the FGMOS transistor” Metadata:
- Title: ➤ Low power and low voltage circuit design with the FGMOS transistor
- Author: Esther Rodriguez-Villegas
- Language: English
- Number of Pages: Median: 304
- Publisher: ➤ Institution of Engineering and Technology - Institution of Engineering & Technology
- Publish Date: 2006
- Publish Location: Stevenage
“Low power and low voltage circuit design with the FGMOS transistor” Subjects and Themes:
- Subjects: ➤ Low voltage integrated circuits - Power transistors - Integrated circuits - Transistors de puissance - Circuits intégrés à faible consommation - TECHNOLOGY & ENGINEERING - Electronics - Transistors - Integrated circuit design - Low-power electronics - MOSFET
Edition Identifiers:
- The Open Library ID: OL44912922M - OL35768635M - OL17217316M
- Online Computer Library Center (OCLC) ID: 623413401 - 70766129 - 505835854
- Library of Congress Control Number (LCCN): 2014412820
- All ISBNs: ➤ 0863416179 - 9781615833115 - 9780863416170 - 9780863412110 - 1615833110 - 0863412114
Access and General Info:
- First Year Published: 2006
- Is Full Text Available: Yes
- Is The Book Public: No
- Access Status: Printdisabled
Online Access
Downloads Are Not Available:
The book is not public therefore the download links will not allow the download of the entire book, however, borrowing the book online is available.
Online Borrowing:
Online Marketplaces
Find Low power and low voltage circuit design with the FGMOS transistor at online marketplaces:
- Amazon: Audiable, Kindle and printed editions.
- Ebay: New & used books.
Wiki
Source: Wikipedia
Wikipedia Results
Search Results from Wikipedia
Power semiconductor device
Generations of MOSFET transistors enabled power designers to achieve performance and density levels not possible with bipolar transistors. Due to improvements
Power MOSFET
ISBN 0-471-15237-4 Pierre Aloïsi, Les transistors MOS de puissance in Interrupteurs électroniques de puissance, traite EGEM, under the direction of Robert
Buck converter
physical implementation, these switches are realized by a transistor and a diode, or two transistors (which avoids the loss associated with the diode's voltage
Power electronics
manufacture the first silicon dioxide field effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface
Algiers putsch of 1961
to de Gaulle was maintained for five months. "The Battle of the Transistors"—as it was called by the press—was quickly and definitively won by de Gaulle
Glossary of engineering: A–L
sur la puissance motrice de la chaleur". Journal de l'École Polytechnique (in French). XIV: 153–90. Facsimile at the Bibliothèque nationale de France