Explore: Jfet

The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that

1940s. In 1945, JFET was patented by Heinrich Welker. Following Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953

the current through a semiconductor. It comes in two types: junction FET (JFET) and metal–oxide–semiconductor FET (MOSFET). FETs have three terminals: source

resistors. The JFET is one of the more common active devices used for the design of voltage-controlled resistors. So much so, that JFET devices are packaged

transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction

power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is

Discrete complementary JFETs are N-channel and P-channel JFETs that are built with a similar process technology and are designed to have similar or matching

N-channel junction gate field-effect transistor (JFET) P-channel junction gate field-effect transistor (JFET) Metal–oxide–semiconductor field-effect transistor

field-effect transistor) CNTFET (carbon nanotube field-effect transistor) JFET (junction field-effect transistor) – N-channel or P-channel SIT (static induction

field-effect transistors (MOSFETs) and junction-gate field-effect transistors (JFETs), and in the active region for bipolar junction transistors (BJTs). A diode-connected