Explore: Insulated Gate Bipolar Transistors

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to

applications. The insulated-gate field-effect transistor (IGFET) was theorized as a potential alternative to junction transistors, but researchers were

digital functions. Hundreds of bipolar junction transistors can be made in one circuit at a very low cost. Bipolar transistor integrated circuits were the

effect transistors; the first planar transistors, in which drain and source were adjacent at the same surface. They showed that silicon dioxide insulated, protected

and is preferred by some. Transistors are categorized by Structure: MOSFET (IGFET), BJT, JFET, insulated-gate bipolar transistor (IGBT), other type.[which

diode Three-terminal devices: Bipolar transistor Darlington transistor Field-effect transistor Insulated-gate bipolar transistor (IGBT) Silicon-controlled

(gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies

by integrated gate-commutated thyristors (IGCT), which are an evolutionary development of the GTO, and insulated-gate bipolar transistors (IGBT), which

two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is

point-contact transistors differ from the slightly later junction transistors: The common base current gain (or α) of a point-contact transistor is usually