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Source: The Open Library

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1Provenance Data in Social Media

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“Provenance Data in Social Media” Metadata:

  • Title: ➤  Provenance Data in Social Media
  • Authors:
  • Language: English
  • Number of Pages: Median: 84
  • Publisher: ➤  Morgan & Claypool Publishers - Springer International Publishing AG
  • Publish Date:

“Provenance Data in Social Media” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 2013
  • Is Full Text Available: Yes
  • Is The Book Public: No
  • Access Status: Borrowable

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2Power semiconductors

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“Power semiconductors” Metadata:

  • Title: Power semiconductors
  • Author:
  • Language: English
  • Number of Pages: Median: 267
  • Publisher: ➤  EPFL Press - Distributed by CRC Press
  • Publish Date:
  • Publish Location: ➤  Boca Raton, FL - Lausanne, Switzerland

“Power semiconductors” Subjects and Themes:

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Access and General Info:

  • First Year Published: 2006
  • Is Full Text Available: No
  • Is The Book Public: No
  • Access Status: No_ebook

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3SOI Lubistors

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“SOI Lubistors” Metadata:

  • Title: SOI Lubistors
  • Author:
  • Language: English
  • Number of Pages: Median: 320
  • Publisher: ➤  Wiley-IEEE Press - Wiley & Sons, Incorporated, John - Wiley & Sons, Limited, John
  • Publish Date:

“SOI Lubistors” Subjects and Themes:

Edition Identifiers:

Access and General Info:

  • First Year Published: 2013
  • Is Full Text Available: No
  • Is The Book Public: No
  • Access Status: No_ebook

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The book is not public therefore the download links will not allow the download of the entire book, however, borrowing the book online is available.

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    4Insulated gate bipolar transistors, IGBT

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    “Insulated gate bipolar transistors, IGBT” Metadata:

    • Title: ➤  Insulated gate bipolar transistors, IGBT
    • Author:
    • Language: English
    • Number of Pages: Median: 627
    • Publisher: ➤  IEEE Press - John Wiley - Wiley-Interscience
    • Publish Date:
    • Publish Location: Hoboken, NJ - Piscataway, NJ

    “Insulated gate bipolar transistors, IGBT” Subjects and Themes:

    Edition Identifiers:

    Access and General Info:

    • First Year Published: 2002
    • Is Full Text Available: No
    • Is The Book Public: No
    • Access Status: No_ebook

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    5INSTANT-IGBT network simulation and transient ANalysis tool

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    “INSTANT-IGBT network simulation and transient ANalysis tool” Metadata:

    • Title: ➤  INSTANT-IGBT network simulation and transient ANalysis tool
    • Author:
    • Language: English
    • Number of Pages: Median: 151
    • Publisher: ➤  For sale by the Supt. of Docs., U.S. G.P.O. - U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology - U.S. Dept. of Commerce, National Institute of Standards and Technology
    • Publish Date:
    • Publish Location: ➤  Gaithersburg, MD - Washington, DC

    “INSTANT-IGBT network simulation and transient ANalysis tool” Subjects and Themes:

    Edition Identifiers:

    Access and General Info:

    • First Year Published: 1992
    • Is Full Text Available: No
    • Is The Book Public: No
    • Access Status: No_ebook

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    Downloads Are Not Available:

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      6Schaltungsentwicklung, Simulation und Entwurf von Ansteuer- und Überwachungs-IC's für eine IGBT-Halbbrücke

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      “Schaltungsentwicklung, Simulation und Entwurf von Ansteuer- und Überwachungs-IC's für eine IGBT-Halbbrücke” Metadata:

      • Title: ➤  Schaltungsentwicklung, Simulation und Entwurf von Ansteuer- und Überwachungs-IC's für eine IGBT-Halbbrücke
      • Author:
      • Language: ger
      • Number of Pages: Median: 145
      • Publisher: VDI Verlag
      • Publish Date:
      • Publish Location: Dusseldorf

      “Schaltungsentwicklung, Simulation und Entwurf von Ansteuer- und Überwachungs-IC's für eine IGBT-Halbbrücke” Subjects and Themes:

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      Access and General Info:

      • First Year Published: 1999
      • Is Full Text Available: No
      • Is The Book Public: No
      • Access Status: No_ebook

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      7MOS-controlled switches for high-voltage application

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      “MOS-controlled switches for high-voltage application” Metadata:

      • Title: ➤  MOS-controlled switches for high-voltage application
      • Author:
      • Language: English
      • Number of Pages: Median: 119
      • Publisher: Hartung-Gorre
      • Publish Date:
      • Publish Location: Konstanz

      “MOS-controlled switches for high-voltage application” Subjects and Themes:

      Edition Identifiers:

      Access and General Info:

      • First Year Published: 2001
      • Is Full Text Available: No
      • Is The Book Public: No
      • Access Status: No_ebook

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      8Some reliability aspects of IGBT modules for high-power applications

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      “Some reliability aspects of IGBT modules for high-power applications” Metadata:

      • Title: ➤  Some reliability aspects of IGBT modules for high-power applications
      • Author:
      • Language: English
      • Number of Pages: Median: 178
      • Publisher: Hartung-Gorre
      • Publish Date:
      • Publish Location: Konstanz

      “Some reliability aspects of IGBT modules for high-power applications” Subjects and Themes:

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      Access and General Info:

      • First Year Published: 2001
      • Is Full Text Available: No
      • Is The Book Public: No
      • Access Status: No_ebook

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      9Static and dynamic thermal behavior of IGBT power modules

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      “Static and dynamic thermal behavior of IGBT power modules” Metadata:

      • Title: ➤  Static and dynamic thermal behavior of IGBT power modules
      • Author:
      • Language: English
      • Number of Pages: Median: 169
      • Publisher: Hartung-Gorre
      • Publish Date:
      • Publish Location: Konstanz

      “Static and dynamic thermal behavior of IGBT power modules” Subjects and Themes:

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      • First Year Published: 2001
      • Is Full Text Available: No
      • Is The Book Public: No
      • Access Status: No_ebook

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      10The insulated gate bipolar transistor (IGBT)

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      Book's cover

      “The insulated gate bipolar transistor (IGBT)” Metadata:

      • Title: ➤  The insulated gate bipolar transistor (IGBT)
      • Author:
      • Language: English
      • Number of Pages: Median: 627
      • Publisher: ➤  Wiley-Interscience - John Wiley - Wiley-IEEE Press
      • Publish Date:
      • Publish Location: [Great Britain] - Hoboken, NJ

      “The insulated gate bipolar transistor (IGBT)” Subjects and Themes:

      Edition Identifiers:

      Access and General Info:

      • First Year Published: 2003
      • Is Full Text Available: No
      • Is The Book Public: No
      • Access Status: No_ebook

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      Wiki

      Source: Wikipedia

      Wikipedia Results

      Search Results from Wikipedia

      Insulated-gate bipolar transistor

      An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to

      Field-effect transistor

      applications. The insulated-gate field-effect transistor (IGFET) was theorized as a potential alternative to junction transistors, but researchers were

      Bipolar junction transistor

      digital functions. Hundreds of bipolar junction transistors can be made in one circuit at a very low cost. Bipolar transistor integrated circuits were the

      MOSFET

      effect transistors; the first planar transistors, in which drain and source were adjacent at the same surface. They showed that silicon dioxide insulated, protected

      Transistor

      and is preferred by some. Transistors are categorized by Structure: MOSFET (IGFET), BJT, JFET, insulated-gate bipolar transistor (IGBT), other type.[which

      Semiconductor device

      diode Three-terminal devices: Bipolar transistor Darlington transistor Field-effect transistor Insulated-gate bipolar transistor (IGBT) Silicon-controlled

      Multigate device

      (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies

      Darlington transistor

      two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is

      Gate turn-off thyristor

      by integrated gate-commutated thyristors (IGCT), which are an evolutionary development of the GTO, and insulated-gate bipolar transistors (IGBT), which

      Field-programmable gate array

      Spartan FPGA from Xilinx A field-programmable gate array (FPGA) is a type of configurable integrated circuit that can be repeatedly programmed after manufacturing