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Source: The Open Library

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1Fabrication and characterization of a long wavelength InP HBT-based optical receiver

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“Fabrication and characterization of a long wavelength InP HBT-based optical receiver” Metadata:

  • Title: ➤  Fabrication and characterization of a long wavelength InP HBT-based optical receiver
  • Author:
  • Language: English
  • Publisher: ➤  National Aeronautics and Space Administration - National Technical Information Service, distributor
  • Publish Date:
  • Publish Location: ➤  Springfield, Va - [Washington, DC

“Fabrication and characterization of a long wavelength InP HBT-based optical receiver” Subjects and Themes:

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Access and General Info:

  • First Year Published: 1997
  • Is Full Text Available: No
  • Is The Book Public: No
  • Access Status: No_ebook

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    2SiGe/Si monolithically integrated amplifier circuits

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    “SiGe/Si monolithically integrated amplifier circuits” Metadata:

    • Title: ➤  SiGe/Si monolithically integrated amplifier circuits
    • Author:
    • Language: English
    • Publisher: ➤  National Technical Information Service, distributor - National Aeronautics and Space Administration
    • Publish Date:
    • Publish Location: ➤  Springfield, Va - [Washington, DC

    “SiGe/Si monolithically integrated amplifier circuits” Subjects and Themes:

    Edition Identifiers:

    Access and General Info:

    • First Year Published: 1998
    • Is Full Text Available: No
    • Is The Book Public: No
    • Access Status: No_ebook

    Online Access

    Downloads Are Not Available:

    The book is not public therefore the download links will not allow the download of the entire book, however, borrowing the book online is available.

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      Wiki

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      Heterojunction

      A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed

      Organic solar cell

      the morphology. Device efficiency based on co-polymer approaches have yet to cross the 2% barrier, whereas bulk-heterojunction devices exhibit efficiencies

      High-electron-mobility transistor

      incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case

      Heterojunction bipolar transistor

      A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and

      Heterojunction solar cell

      Heterojunction solar cells (HJT), variously known as Silicon heterojunctions (SHJ) or Heterojunction with Intrinsic Thin Layer (HIT), are a family of photovoltaic

      Russell Dupuis

      room-temperature quantum-well lasers. His other work has focused on III-V heterojunction devices, and LEDs. Dupuis was elected as a member into the National Academy

      Metal rectifier

      "The Nobel Prize in Physics 2000". Kroemer, H. (1992). "Heterojunction Devices". 50th Annual Device Research Conference. pp. 0_16–0_17. doi:10.1109/DRC.1992

      OLED

      improved quantum efficiency (up to 19%) by using a graded heterojunction. In the graded heterojunction architecture, the composition of hole and electron-transport

      List of electrical engineers

      Russell Dupuis pioneering contributions MOCVD, LEDs, and III-V heterojunction devices E Martin Eberhard Co-founder of Tesla John Presper Eckert Computer

      Bipolar junction transistor

      V.; Williams, Robin H., eds. (1991). Physics and Technology of Heterojunction Devices. London: Institution of Electrical Engineers (Peter Peregrinus Ltd