Explore: Ferroelectric Devices

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric

are based on dielectric materials. Ferroelectric devices are used in digital electronics as part of ferroelectric RAM, or in analog electronics as tunable

In physics and materials science, ferroelectricity is a characteristic of certain materials that have a spontaneous electric polarization that can be reversed

EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical

thin film based devices was unsatisfactory. Early field effect transistor based devices used bismuth titanate (Bi4Ti3O12) ferroelectric, or Pb1−xLnxTiO3

addition to ferroelectric tunnel junctions, there are other ferroelectric devices, including ferroelectric capacitors (FeCAP), ferroelectric field-effect

approached its scaling limit, ferroelectric hafnia is seen as one of the potential replacements for CMOS and beyond-CMOS devices for current and future electronics

Ferroelectric polymers are a group of crystalline polar polymers that are also ferroelectric, meaning that they maintain a permanent electric polarization

ISSN 0885-3010. PMID 18244349. S2CID 22968703. "Future of Ferroelectric Devices", Ferroelectric Devices 2nd Edition, CRC Press, 2009-11-04, pp. 297–338, doi:10

based) ferroelectrics is Fe FET based memory, which utilises a ferroelectric between the gate and device of a field-effect transistor. Such devices are claimed