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The 1992 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during the past year. The report lists 187 publications, 253 presentations, and 111 new technology reports and patents in the areas of solid-state devices, photonics, advanced computing, and custom microcircuits.

JPRS-JST-90-019 PREX 7.13:90/019 Digitized from IA1176809-12-0064 .

JPRS-JST-90-019 PREX 7.13:90/019 Digitized from IA1176809-12-0064 .

The objective of this Advisory Group on Electron Devices (AGED) Working Group B (Microelectronics) Special Technology Area Review (STAR) was to examine the status of spintronics (electronics based on the spin degree of freedom of the electron) as it applies to nonvolatile memories and quantum-based logic and computing. In addition, the information provided at the STAR is expected to be of use to the Services and Department of Defense (DoD) agencies as they formulate an investment strategy for realizing the potential benefits of spin-based technologies for military applications. For example, magnetic tunnel junction (MTJ) based nonvolatile memory has the potential to replace dynamic random access memory (DRAM) and floating-gate nonvolatile memory (Flash). Specifically, the objectives of the STAR were to: (1) Evaluate the present status and progress in spin-based nonvolatile memory applications. (2) Determine the military applications of this disruptive memory technology particularly as it relates to applying the technology in space-based applications. (3) Review the potential for spin qubit-based quantum logic and computing. (4) Identify current technical barriers and impediments and possible breakthroughs in quantum spin-based computing technologies for future military system applications. (5) Develop additional science and technology efforts to expand applications to DoD systems.

The objective of this Advisory Group on Electron Devices (AGED) Working Group B (Microelectronics) Special Technology Area Review (STAR) was to examine the status of spintronics (electronics based on the spin degree of freedom of the electron) as it applies to nonvolatile memories and quantum-based logic and computing. In addition, the information provided at the STAR is expected to be of use to the Services and Department of Defense (DoD) agencies as they formulate an investment strategy for realizing the potential benefits of spin-based technologies for military applications. For example, magnetic tunnel junction (MTJ) based nonvolatile memory has the potential to replace dynamic random access memory (DRAM) and floating-gate nonvolatile memory (Flash). Specifically, the objectives of the STAR were to: (1) Evaluate the present status and progress in spin-based nonvolatile memory applications. (2) Determine the military applications of this disruptive memory technology particularly as it relates to applying the technology in space-based applications. (3) Review the potential for spin qubit-based quantum logic and computing. (4) Identify current technical barriers and impediments and possible breakthroughs in quantum spin-based computing technologies for future military system applications. (5) Develop additional science and technology efforts to expand applications to DoD systems.

Booz-Allen and Hamilton provides DARPA's Microelectronics Technology Office with a broad range of SETA support under contract MDA972-92-C-0029. This report describes activities during the first quarter of this contract. The main programs supported were: the Digital Gallium Arsenide Insertion Program, the Transition of Optical Processors to Systems (TOPS), the Microelectronics Manufacturing Strategy (MMST) Program, the Flexible, Intelligent Microelectronics Manufacturing Program (FIMM), and the Artificial Neural Networks Technology Program (ANNT). This report is organized by subtask areas in the statement of work, indicating for each subtask the Task Objectives, General Methodology, Technical Results, and Important Findings and Conclusions. The final section of this report presents a summary and conclusions, and appendices present deliverables from Booz-Allen.and special consultants providing MTO support via this contract.

The goal of this program was to develop ultra-fast superconducting digital technology based on HTS Josephson junctions on silicon substrates. Working Josephson junctions and SQUID's were successfully fabricated on silicon, and an Yttrium-Barium-Copper-Oxide RSFQ rs flip-flop with 14 junctions and I/O test structures was successfully designed, fabricated, and tested. The kinetic inductance and London penetration depth of the films on silicon were determined from measurements of SQUIDs on silicon. Minimizing kinetic inductance through the use of thicker films will be required in future devices. An approach to alleviating film stress in these thicker films due to thermal expansion coefficient mismatch is outlined. This proposed solution involves fabricating a functionally graded buffer layer that can flow plastically to relieve stress while at the same time, allows nucleation and growth of heteroepitaxial films. A wafer bonding facility was constructed and utilized to demonstrate the successful bonding of silicon and BPSG coated wafers, a key step in the compliant substrate fabrication procedure.

POLYMERS FOR MICROELECTRONICS Selected abstracts from PME '89 POLYMERS FOR MICROELECTRONICS held 29 Oct - 2 Nov 89 in Tokyo, sponsored by the Japan Society of Radiation Chemistry and cosponsored by the Japan Society of Polymer Science and the Chemical Society of Japan

243 pages ; 23 cm

Auburn University Profiles was a weekly radio program produced by Auburn University's Office of University Relations. Each daily program covered a topic of university, local, or national interest. Programs were about 4 1/2 minutes long and featured students, faculty, administrators, visiting scholars and celebrities.

JPRS-WST-84-023 PREX 7.18/2:84/023 Digitized from IA1176802-13-0022 .

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We report the design, fabrication, and demonstration of thin-film- edge emitter vacuum diodes and transistors. The two-terminal device uses a thin- film-edge emitter as an electron source whose current density depends on the anode voltage. The three terminal device uses a thin-film-edge emitter as an electron source whose current density depends on the voltage applied to the extraction electrodes (gates). The emitted electrons are collected by the anode. All three electrodes (emitter, gate, and anode) are integrated on the same substrate. The devices have integrated on-chip resistors for bum-out prevention. The 3D microstructure was fabricated using IC and micromachining techniques. Contrasted with the usual vertical FEA structures, the particular vacuum transistor design invokes two dimensional vertical symmetry for the extraction electrodes (gate) using multi-layer thin film deposition techniques. The central thin-film-edge emitter is about 300 A thick and is surrounded by two gate electrodes, one above and one below. Vacuum microelectronics, Edge emitter, Thin film technology, High frequency devices, Triodes.

Summary of Progress . Task 2-RSFQ Modeling and design - We have identified parasitic inductance as a critical parameter governing the margins and performance of HTS RSFQ devices. Thermal expansion mismatch induced stress limits the overall thickness of HTS films on silicon substrates to under 70 nm. Because this thickness is less than the london penetration depth, typically 150 nm - 400 nm, we expect a substantial kinetic inductance to be associated with wiring and transmission lines. The kinetic inductance associated with the Josephson junctions themselves is still poorly understood. Because of the importance of inductance to overall circuit performance, we have fabricated and measured (Task 3) some dc SQUIDs and RSFQ flip flops incorporating SQUIDs. The estimated sheet parasitic kinetic inductance is given by the formula L sub sq =lambda sub L(2)/d, where lambda sub L is the London penetration depth, d is the film thickness (d much less than lambda sub L) and the current distribution is assumed to be uniform. The total loop inductance in a dc squid can be extracted from the magnitude of the magnetic field induced critical current modulation. We have performed measurements on a SQUID fabricated from a 25 nm thick film grown on an LaAlO3 substrate by the barium fluoride process. The inductance calculated over a wide temperature range are plotted in Figure 1. Similar results for a much smaller SQUID imbedded in an RSFQ flip flop are also shown in the figure. The temperature dependence to the sheet inductance is a signature of substantial kinetic inductance. Since kinetic inductance negatively impacts circuit performance, it is essential that careful quantitative account of all sources of inductance be included in circuit design efforts.

We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a standard microelectronics design flow meeting process design rules, and fabricated alongside transistors native to the process. We demonstrate both 1520nm wavelength and 1180nm cavity designs using different cavity implementations due to design rule constraints. For the 1520nm and 1180nm designs, loaded quality factors of 2,000 and 4,000 are measured, and intrinsic quality factors of 100,000 and 60,000 are extracted. We also demonstrate an evanescent coupling geometry which decouples the cavity and waveguide-coupling design.

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The Air Force Avionics Laboratory (AFAL) at Wright-Patterson AFB is the focal point for development of new avionics technology for the Air Force. In order to carry out this responsibility, a significant capability to simulate physical avionics systems and components has been created by the AFAL divisions. This manual presents introductory and summary coverage of the AFAL Computer Aided Design (CAD) Facility in Section I and by presenting more detailed descriptive material in subsequent sections. The contents of Section I address the CAD Facility capabilities from a planning/management viewpoint by relating the Laboratory mission to present facility capability through the development of a conceptual simulation class structure. The contents of subsequent sections of this manual address specific facility/capability from a potential-user viewpoint.

The Air Force Avionics Laboratory (AFAL) at Wright-Patterson AFB is the focal point for development of new avionics technology for the Air Force. In order to carry out this responsibility, a significant capability to simulate physical avionics systems and components has been created by the AFAL divisions. This manual presents introductory and summary coverage of the AFAL Computer Aided Design (CAD) Facility in Section I and by presenting more detailed descriptive material in subsequent sections. The contents of Section I address the CAD Facility capabilities from a planning/management viewpoint by relating the Laboratory mission to present facility capability through the development of a conceptual simulation class structure. The contents of subsequent sections of this manual address specific facility/capability from a potential-user viewpoint.

The 1991 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 193 publications, 211 presentations, and 125 new technology reports and patents.

Josephson Junction Fabrication and Testing. RSFQ Modeling and Design. RSFQ circuit fabrication and testing.

The Proceedings for International Workshop on Device Technology: Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, 3-5 September 2001. This meeting focuses on different aspects concerning electrical, structural and physico-chemical characterization of alternative oxide materials, the so called high-K dielectrics, which are being considered as replacements for SiO2 as gate dielectrics in ultra-large scale integration devices. Recent progress in sub-2 nm oxide and oxynitride gate dielectrics will be also approached as they constitute the present stage of semiconductor technology. Finally, the emerging field of oxide, oxynitride and alternative oxide films on SiC will also compose the program. It is the purpose of this Workshop to establish a vivid and quite informal meeting for discussing the subjects in the presence of leading researchers from major semiconductor device manufacturers, research centers and university laboratories.

The study of epitaxial layer thickness and resistivity for integrated circuit N/P material was completed. Work on epitaxial layer perfection was continued and the importance of the substrate perfection and surface cleaning established. The feasibility of three point probe and junction capacitance techniques on a stepetched sample for the determination of layer doping profile was investigated. Experiments on in situ CO2 - SiCl4 oxide growth immediately after epitaxial deposition were started. Epitaxial deposition on peripheral oxide-masked substrates was investigated. The Sylvania doublebevel technique was successfully used to determine doping profiles in N+ prediffused N/P planar circuit structures. Work on vapor phase deposition of thin silicon films on non-silicon dielectric substrates was continued.

The last chip, described in the previous monthly report, demonstrated that the Stony Brook scientists were able to fabricate working junctions and SQUIDs from thin YBCO films fabricated on silicon substrates. It was observed that the junctions were not well matched in critical temperatures. This non-uniformity is primarily attributable to non uniformities within the films. To improve the film uniformity, and to accommodate the demands of other projects, we built a new substrate heater for the deposition system, that would provide more uniform temperatures over larger substrate areas. The new heater was built to allow deposition onto 12 mm square chips, which can subsequently be diced into 4 5 mm square chips. With this arrangement, it should be possible to fabricate and test many more junctions from a single deposition and gather more and better statistics on junction properties. During this month, the AER PLD facility was down for several weeks while a new substrate heater was installed and broken in. Only one film was sent to Stony Brook for fabrication experiments. They are presently working on fabricating junctions from this chip.

Booz-Allen & Hamilton provides DARPA's Microelectronics Technology Office with a broad range of SETA support under contract MDA972-92-C-0029. This report describe activities during the first quarter of this contract. The main programs supported were: the Digital Gallium Arsenide Insertion Program, the Transition of Optical Processors to Systems (TOPS), the Microelectronics Manufacturing Strategy (MMST) Program, the Flexible, Intelligent Microelectronics Manufacturing Program (FIMM),and the Artificial Neural Networks Technology Program (ANNT). In addition, support was begun to a new High Speed Circuit Design Program. This report is organized by subtask areas in the statement of work, indicating for each subtask the Task Objectives, General Methodology, Technical Results, and Important Findings and Conclusions. The final section of this report presents a summary and conclusions, and the appendices present trip reports, meeting schedules, and some viewgraphs generated during this quarter of the contract.

Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520021-3 DIRECTOR OF CENTRAL INTELLIGENCE Scientific and Technical Intelligence Committee 10 JAN ?993 MEMORANDUM FOR: Deputy Director of Central Intelligence FROM: SUBJECT: REFERENCES: Chairman, scientific and Technical Intelligence Committee Letters of Appreciation for the Authors of "A Soviet Microelectronics Technology Transfer Case Study" A. A Soviet Microelectronic Technology Transfer Ca e Study B. Bo Denysyk Memorandum Microelectronic Case Study on the USSR, dated 7 Oct 1982 The STIC has recently published the referenced micro- electronics case study. This study was originally done at the request of Deputy Assistant Secretary of Commerce for Export Administration, Bohdan Denysyk. This is the first comprehensive technology transfer case study done by the Intelligence Community relating technology transfer and military use of transferred technology. The four STIC working grout members and Lyman Hall, Army FSTC did an out- standing job o preparing this study for Secretary Denysyk on very short notice. I feel strongly that their efforts be recognized. If you concur, I have attached memoranda, of appreciation for your signature. Attachments: As Stated 25X1 25X15X1 25X1 25X1 25X1 25X1 Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520021-3

This item represents a case in PACER, the U.S. Government's website for federal case data. If you wish to see the entire case, please consult PACER directly.

Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 Iq Next 1 Page(s) In Document Denied Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 1, w Approved For Release 2007/12/11 CIA-RDP85MOO364ROO1001520026-8 25X1 Central Intel{i`en 4 AUG $; Copy No. MEMORANDUM FOR: Deputy Assistant Secretary for Export Administration, Department of Commerce SUBJECT: Microelectronics Case Studies Involving Technology Transfer to the USSR REFERENCE: Memorandum to the DDCI from Bohdan Denysyk, Deputy Assistant Secretary for Export Administration, Department of Commerce, dated 10 May 1982 ? 1. We are pleased to submit to you the attached report, "Case Studies of Microelectronics Technology Transfer to the USSR", prepared by the Scientific and Technical Intelligence Committee's Solid State Electronic Working Group. The report focuses upon and details the chain of events which lead to Soviet acquisition of the capability to copy and mass produce U.S. Texas Instruments SN 5400/7400 series integrated circuits. The report details Soviet efforts starting from data collection, through their illegal acquisitions of Western production tech- nology, and finishing with the known denlovment of these copied ICs in Soviet military systems. 2. The STIC believes that this is the best documented single case of technology transfer currently available which provides the depth and detail requested in your memorandum. The report also briefly discusses other cases which are believed to be significant examples of technology transfer, but lack of equally detailed information prevents a similarly detailed presentation of these cases. When Detached From Enclosure Treat As SECRETF 25X1 25X1 25X1 25X1 25X1 25X1 25X1 Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8 Approved For Release 2007/12/11 CIA-RDP85M00364R001001520026-8 I I 3. Because the report contains information derived from all source material, including documents, it is currently releasable to you as an EYES ONLY document. We are currently working on a version of the report which will be releasable to COCOM, but it is likely this version wil not have the specificity of the original document. 4. We feel this report provides a compelling and convincing example of the military impact of the transfer of Western technology to the USSR and we believe it to be the first of its kind ever produced. We hope you will find it useful. If you have any further auestions, please do not hesitate to contact us. 116/ John No McMahon John N. McMahon Deputy Director of Central Intelligence Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 Tf1P CPCPFTI Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8 SUBJECT: Microelectronics Case Studies Involving Technology Transfer to the USSR Distribution: Orig. - Addressee Cy 2 - DCI 3 - DDCI 4 - Executive Director 5 - ER 6 - DDI 7 - ADDI 8 - DDI Registry 9 - STIC Chrono 10 - STIC Subject 11 - OSWR Chrono OSWR/STICI I (30 July 82) Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8

Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 Iq Next 1 Page(s) In Document Denied Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 1, w Approved For Release 2007/12/11 CIA-RDP85MOO364ROO1001520026-8 25X1 Central Intel{i`en 4 AUG $; Copy No. MEMORANDUM FOR: Deputy Assistant Secretary for Export Administration, Department of Commerce SUBJECT: Microelectronics Case Studies Involving Technology Transfer to the USSR REFERENCE: Memorandum to the DDCI from Bohdan Denysyk, Deputy Assistant Secretary for Export Administration, Department of Commerce, dated 10 May 1982 ? 1. We are pleased to submit to you the attached report, "Case Studies of Microelectronics Technology Transfer to the USSR", prepared by the Scientific and Technical Intelligence Committee's Solid State Electronic Working Group. The report focuses upon and details the chain of events which lead to Soviet acquisition of the capability to copy and mass produce U.S. Texas Instruments SN 5400/7400 series integrated circuits. The report details Soviet efforts starting from data collection, through their illegal acquisitions of Western production tech- nology, and finishing with the known denlovment of these copied ICs in Soviet military systems. 2. The STIC believes that this is the best documented single case of technology transfer currently available which provides the depth and detail requested in your memorandum. The report also briefly discusses other cases which are believed to be significant examples of technology transfer, but lack of equally detailed information prevents a similarly detailed presentation of these cases. When Detached From Enclosure Treat As SECRETF 25X1 25X1 25X1 25X1 25X1 25X1 25X1 Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8 Approved For Release 2007/12/11 CIA-RDP85M00364R001001520026-8 I I 3. Because the report contains information derived from all source material, including documents, it is currently releasable to you as an EYES ONLY document. We are currently working on a version of the report which will be releasable to COCOM, but it is likely this version wil not have the specificity of the original document. 4. We feel this report provides a compelling and convincing example of the military impact of the transfer of Western technology to the USSR and we believe it to be the first of its kind ever produced. We hope you will find it useful. If you have any further auestions, please do not hesitate to contact us. 116/ John No McMahon John N. McMahon Deputy Director of Central Intelligence Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 Tf1P CPCPFTI Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8 SUBJECT: Microelectronics Case Studies Involving Technology Transfer to the USSR Distribution: Orig. - Addressee Cy 2 - DCI 3 - DDCI 4 - Executive Director 5 - ER 6 - DDI 7 - ADDI 8 - DDI Registry 9 - STIC Chrono 10 - STIC Subject 11 - OSWR Chrono OSWR/STICI I (30 July 82) Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8

Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 Iq Next 1 Page(s) In Document Denied Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 1, w Approved For Release 2007/12/11 CIA-RDP85MOO364ROO1001520026-8 25X1 Central Intel{i`en 4 AUG $; Copy No. MEMORANDUM FOR: Deputy Assistant Secretary for Export Administration, Department of Commerce SUBJECT: Microelectronics Case Studies Involving Technology Transfer to the USSR REFERENCE: Memorandum to the DDCI from Bohdan Denysyk, Deputy Assistant Secretary for Export Administration, Department of Commerce, dated 10 May 1982 ? 1. We are pleased to submit to you the attached report, "Case Studies of Microelectronics Technology Transfer to the USSR", prepared by the Scientific and Technical Intelligence Committee's Solid State Electronic Working Group. The report focuses upon and details the chain of events which lead to Soviet acquisition of the capability to copy and mass produce U.S. Texas Instruments SN 5400/7400 series integrated circuits. The report details Soviet efforts starting from data collection, through their illegal acquisitions of Western production tech- nology, and finishing with the known denlovment of these copied ICs in Soviet military systems. 2. The STIC believes that this is the best documented single case of technology transfer currently available which provides the depth and detail requested in your memorandum. The report also briefly discusses other cases which are believed to be significant examples of technology transfer, but lack of equally detailed information prevents a similarly detailed presentation of these cases. When Detached From Enclosure Treat As SECRETF 25X1 25X1 25X1 25X1 25X1 25X1 25X1 Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8 Approved For Release 2007/12/11 CIA-RDP85M00364R001001520026-8 I I 3. Because the report contains information derived from all source material, including documents, it is currently releasable to you as an EYES ONLY document. We are currently working on a version of the report which will be releasable to COCOM, but it is likely this version wil not have the specificity of the original document. 4. We feel this report provides a compelling and convincing example of the military impact of the transfer of Western technology to the USSR and we believe it to be the first of its kind ever produced. We hope you will find it useful. If you have any further auestions, please do not hesitate to contact us. 116/ John No McMahon John N. McMahon Deputy Director of Central Intelligence Approved For Release 2007/12/11 : CIA-RDP85M00364R001001520026-8 Tf1P CPCPFTI Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8 SUBJECT: Microelectronics Case Studies Involving Technology Transfer to the USSR Distribution: Orig. - Addressee Cy 2 - DCI 3 - DDCI 4 - Executive Director 5 - ER 6 - DDI 7 - ADDI 8 - DDI Registry 9 - STIC Chrono 10 - STIC Subject 11 - OSWR Chrono OSWR/STICI I (30 July 82) Approved For Release 2007/12/11 : CIA-RDP85MOO364ROO1001520026-8

The purpose of this review is to determine what is currently considered state-of-the-art for visually inspecting hybrid microelectronic circuits during assembly, with particular emphasis on the use of automation. In order to understand the feasibility and extent to which automated inspection equipment could be implemented, consideration has been given to the following: (1) the hybrid circuit industry in terms of its structure and market significance, (2) the process stages where visual inspection is needed, and (3) the various forms of visual inspection in use and development, including optical microscopy, 2-D, and 3-D machine vision. Keywords: Machine vision, Electronics, Microelectronics, Hybrid circuits, Inspection, Automation.

The purpose of this review is to determine what is currently considered state-of-the-art for visually inspecting hybrid microelectronic circuits during assembly, with particular emphasis on the use of automation. In order to understand the feasibility and extent to which automated inspection equipment could be implemented, consideration has been given to the following: (1) the hybrid circuit industry in terms of its structure and market significance, (2) the process stages where visual inspection is needed, and (3) the various forms of visual inspection in use and development, including optical microscopy, 2-D, and 3-D machine vision. Keywords: Machine vision, Electronics, Microelectronics, Hybrid circuits, Inspection, Automation.

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents.

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents.

The 1988 to 1989 Technical Report of the JPL Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center. Listed are 321 publications, 282 presentations, and 140 new technology reports and patents.

Includes bibliographical references

Direct e-beam writing technique (DEW) was used for preparation of an RSFQ RS Flip-Flop on YBCO thin film operating at 26 K. The most important unique features of the DEW technique instrumental for successful operation of RSFQ circuits are: (1) tunability of the critical temperature Tc (and hence the critical current I sub c at an operating temperature) (2) simplicity of the in-plane two-dimensional design combined with the freedom in the arrangement of the junctions. jg p.3

Direct e-beam writing technique (DEW) was used for preparation of an RSFQ RS Flip-Flop on YBCO thin film operating at 26 K. The most important unique features of the DEW technique instrumental for successful operation of RSFQ circuits are: (1) tunability of the critical temperature Tc (and hence the critical current I sub c at an operating temperature) (2) simplicity of the in-plane two-dimensional design combined with the freedom in the arrangement of the junctions. jg p.3

The primary goal of the IMPACT effort is to demonstrate the advantages of heterostructure integrated thermionic (HIT) coolers and their integration with microelectronics and photonics. The majority of our research involves the development of this new technology through nanostructured materials design and growth; device design and fabrication; simulation and modeling; novel measurements of thermoelectric and thermionic behavior; and systems integration and packaging.

PARTIAL CONTENTS; Activated Metal Junction Technology for AlN/Cu System High Power Module Substrate; Application of Aluminum Nitride to Large Electric Power Insulating Substrate; Degree of Sintering, Thermal Conductivity of Aluminum Nitride Ultrafine Particles; Effect of Baking Pressure on AlN Sintering; Thick Film Resistor for Use in AlN Ceramics.

This item represents a case in PACER, the U.S. Government's website for federal case data. If you wish to see the entire case, please consult PACER directly.

Superconducting electronics have long been regarded as having the potential for superior switching speeds and reduced power consumption compared to semiconducting devices. High temperature superconducting materials, such as YBa2Cu3O7, present many new opportunities. Because many targeted applications of superconducting electronics rely on the high switching speeds attainable by Josephson junctions, however, rf properties have played a significant role in the search for practical substrates. The overall goal of this Phase II STTR program, a collaboration between Advanced Fuel Research, Inc. and the State University of New York at Stony Brook, was to develop an ultrahigh-speed superconducting electronics technology using electron beam modified high temperature superconducting Josephson junctions on silicon and other rf compatible substrates. Considerable success was achieved towards the development of a compliant substrate technology that could potentially enable growth of low-stress YBa2Cu3O7 on silicon. Also, a model was developed describing the formation and degradation properties of electron beam modified junctions, thus serving as a reliable basis for the description of the junctions and allowing for better control of the process and better reproducibility of the devices. Unfortunately, however, the program was unsuccessful in demonstrating working junctions and junction-based devices due to equipment problems and loss of key technical personnel.

Superconducting electronics have long been regarded as having the potential for superior switching speeds and reduced power consumption compared to semiconducting devices. High temperature superconducting materials, such as YBa2Cu3O7, present many new opportunities. Because many targeted applications of superconducting electronics rely on the high switching speeds attainable by Josephson junctions, however, rf properties have played a significant role in the search for practical substrates. The overall goal of this Phase II STTR program, a collaboration between Advanced Fuel Research, Inc. and the State University of New York at Stony Brook, was to develop an ultrahigh-speed superconducting electronics technology using electron beam modified high temperature superconducting Josephson junctions on silicon and other rf compatible substrates. Considerable success was achieved towards the development of a compliant substrate technology that could potentially enable growth of low-stress YBa2Cu3O7 on silicon. Also, a model was developed describing the formation and degradation properties of electron beam modified junctions, thus serving as a reliable basis for the description of the junctions and allowing for better control of the process and better reproducibility of the devices. Unfortunately, however, the program was unsuccessful in demonstrating working junctions and junction-based devices due to equipment problems and loss of key technical personnel.

Superconducting electronics have long been regarded as having the potential for superior switching speeds and reduced power consumption compared to semiconducting devices. High temperature superconducting materials, such as YBa2Cu3O7, present many new opportunities. Because many targeted applications of superconducting electronics rely on the high switching speeds attainable by Josephson junctions, however, rf properties have played a significant role in the search for practical substrates. The overall goal of this Phase II STTR program, a collaboration between Advanced Fuel Research, Inc. and the State University of New York at Stony Brook, was to develop an ultrahigh-speed superconducting electronics technology using electron beam modified high temperature superconducting Josephson junctions on silicon and other rf compatible substrates. Considerable success was achieved towards the development of a compliant substrate technology that could potentially enable growth of low-stress YBa2Cu3O7 on silicon. Also, a model was developed describing the formation and degradation properties of electron beam modified junctions, thus serving as a reliable basis for the description of the junctions and allowing for better control of the process and better reproducibility of the devices. Unfortunately, however, the program was unsuccessful in demonstrating working junctions and junction-based devices due to equipment problems and loss of key technical personnel.

JPRS-JST-90-003 PREX 7.13:89/003 Digitized from IA1176809-12-0047 .

JPRS-WST-84-023 PREX 7.18/2:84/023 Digitized from IA1176802-13-0022 .