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The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

The Explore Microelectronics EP952(B) is a low-power HDMI transmitter compliant with the HDMI and HDCP 1.4 specifications. The device accepts an RGB or YUV video input and an I²S or SPDIF audio input and converts them into HDMI differential signaling. Supports 24bpp video up to 1920x1080 in HDMI mode, 3D video, x2/x4/x8 input integer pixel scaling, microcontroller/microprocessor control via I²C slave, ½, ⅓ or ¼ audio sampling rate scaling, HDCP encryption engine, de-skewing, backwards-compatible with DVI 1.0, etc. Available in LQFP-64 (7mm x 7mm) or BGA-64 (5mm x 5mm)

From the bitsavers.org collectio n, a scanned-in computer-related document. semi-tech microelectronics :: pied-piper :: Pied-Piper Modem Communications Manual

From the bitsavers.org collection, a scanned-in computer-related document. components :: motorola :: dataBooks :: 1969 Motorola microElectronics :: 18 MRTL 700

Includes bibliographical references and index

Includes bibliographical references and index

Approved For Release 1999/09/ , ? , B00553R000100090009-1 GOALS The primary direction this program will follow is the development of suitable technology for implementing elec- tronic functions with minimum prime power requirements. By definition, Micropower Electronics will be taken to be those electronics that operate at the minimum absolute power supply level and/or those electronics that operate with maximum efficiency. Efficiency in this context is defined as the ratio df functionally useful power to the absolute prime power supplied. For example, in the case of a transmitter, efficiency is that ratio of effective radiated power to total power drain from the prime power source. In the course of developing the technology that supports micropower electronics, substantial effort is to be focused on fabrication methods and techniques, reproducibility, and long-term reliability. These con- siderations are of critical importance in accomplishing a smooth and timely transition of a given development into the hands of the user groups which obviously is the ultimate goal of this plan. IMPLEMENTATION Based on in-house analyses, basic research is supported in selected technical areas. Generally, the analyses have indicated specific components such as the transistor as the major impediment to attaining micropower operation. When this is the case, a development group is selected which not only has the research capability but ideally is also associ- ated with a production operation as well. Experience has shown that this ideal case produces better results from a time and schedule viewpoint to say nothing of the repro- ducibility aspect. Research is then pursued with this group until such time that the desired goals are achieved in the laboratory. At this juncture, if the case is an ideal one, a small scale pilot production run is attempted to establish the data base for future fabrication runs. A second at- tribute of this pilot fabrication exercise is that it Approved For Release 1999/09/27 :CIA-RDP88B00553R000100090009-1 Approved For Release 1999/O~P88B00553R000100090009-1 ~_ , produces small quantities of the product for analysis and evaluation by the research group and by the various potential users. Thus the user gains some advanced knowledge of emerging products that will influence his future plans, and preliminary reliability data can be gathered. Based on working out the details of the reproduction process, a manufacturing group is given the task of producing what- ever quantity of the product is desired. If, for example, the item has commercial appeal, then the contractor will produce significant quantities and the long-term reliability will be gathered rather easily. On the other hand, if the item is peculiar to Agency requirements, an independent investigator is enlisted to attempt a long-term reliability analysis based on accelerated life tests, artificial aging, or whatever means are appropriate. Clearly this procedure will vary somewhat depending upon the nature of the product itself. For example, if the item happens to be a transistor, a miniature isolator, or some other component, then the plan described above will closely describe its evolution. Alternatively, if the product happened to be a micropower circuit technique for oscillator stabilization, say, then the steps would be somewhat altered since the final item is not an identifiable entity in its own right. CURRENT DEVELOPMENT EFFORTS Low Voltage Transistors The-present emphasis has been placed on the UHF region of the RF spectrum with additional research in 5-band. In the former case, the fabrication techniques needed for a pilot run of power transistors is being formulated. One such run is anticipated during the current project. Since the S-band transistor will build upon the technology and knowledge gained at UHF, the effort is research in nature with no pilot production forecast for this contract period. Approved For Release 1999/09/27 : lEIA-RDP88B00553R000100090009-1 Approved For Release 1 ~:. - DP88B00553R000100090009-1 Direct correlation between performance and fabrication techniques remains the highest priority data to be gathered because of the direct relationship with reliability and reproduction costs. Micropower Circuit Techniques Techniques are being developed for providing a, tailored base characteristic as required for stabilization of bipolar devices over temperature and supply voltage variations. The emphasis in this endeavor is to compile a catalog of inte- grated resistor-transistor-diode network designs to fulfill this goal. A small sample will be fabricated for evaluation purposes; however, the major product will be the tabulation of designs versus desired characteristics. Silicon on Insulating Substrate (SO15) SOIS process technology is being developed for use in the fabrication of low voltage digital functions. The results of this work are expected to increase the speed of current micropower digital circuitry, substantially reduce the power required, and reduce the cell size (the area re- quired to fabricate a digital circuit). A sample circuit will be fabricated utilizing these techniques for evaluation purposes. Based on the results obtained, the basic tech- nology will be incorporated into the fabrication process of micropower digital circuits currently in use to obtain the projected performance enhancement. Linear Com lementar -MOS (CMOS~:: Circuits Basic research into the utility of linear CMOS circuits and devices is underway to assess applicability in micro- power. low frequency functions; i.e., audio amplifiers, operational amplifiers, and active filters. The potential of CMOS for more complete integration of linear functions and reduction in quantity/size of off-chip components is being investigated. These investigations will form the basis for future actions in this area. Approved For Release 1999/09/27 :3CIA-RDP88B00553R000100090009-1 Approved For Release 1999/~$M~'}~'QRS8B00553R000100090009-1 Miniature Coupler Analysis and experimentation are being performed to determine the utility of opto-electronic couplers as RF isolators at VHF frequencies. The investigation is ad- dressing the problem of providing isolation between stages and/or between the output stage and the antenna of low power VHF transmitters. If successful in developing this concept, a sample quantity will most certainly be fabrica- tion for in-house (ORD/TSD) evaluation. Micropower Electronics Reliability Analysis An analysis of micropower system reliability is being pursued to determine the failure mode and projected lif e- time of such systems. Although the reliability figure of merit of several of the in-field micropower components is known on an individual basis, the data is missing from a total system viewpoint. What is to be ascertained .Ls how the new micropower components interface with the standard items, whether system assembly is significantly affecting life, and what is the projected life of these specialized systems. The results will be documented in a report indi- cating possible weakness requiring future R&D and procure- ment procedures to enhance reliability. Micropower Fabrication and Design Support This area represents a laboratory geared to preliminary experimental analysis, independent evaluation of products and designs, and a rapid implementation vehicle for ex- ploiting new developments. An extremely valuable attribute of this facility is the part it plays in providing the transition for technology from component R&D into user- oriented system concepts. Approved For Release 1999/09/27 : CIA-RQP88B00553R000100090009-1 Approved For Release 1 ~ ,, 4. RDP88B00553R000100090009-1 FUTURE DEVELOPMENT AREAS Digital Frequency Control The successful development of low voltage micropower Silicon Gate MOS digital functions has opened an entirely new field of command and control electronics. With micro- watts of power, it is possible to dynamically tune receivers and transmitters. It is planned to implement one particular function to verify the design concept and provide the vehicle for demonstrating the utility of this technology to user groups. The general design concept is as unique as the tech- nology supporting it and will be of prime import to TSD and OEL in particular. This developmental area undoubtedly will motivate the creative command and control designer to sig- nificantly upgrade all remotely controlled devices. Large Scale Integration (LSI) Beyond any question, the future of electronic system development belongs to those who have a viable capability in integrated circuit technology. To achieve the ultimate in reliability without giving up the versatility required of Agency requirements, a custom LSI facility must be cultivated. This group must, of course, be well-versed in current tech- nology but not basic research oriented. Rather, it is de- sirable that their research must be directed toward developing the capability of generating medium-to-large scale integrated circuits using advanced technology (such as Silicon Gate MOS techniques, SOIS, etc.) in a short time frame. Whi7.e there are a number of custom LSI laboratories presently operating, they basically use techniques and standards that arE~ three- to-five years old. The plan of the micropower program will be to develop a source of L5I chips using the Silicon Gate MOS/SOIS technology and will ignore the current N,P channel MOS methods. The decision to proceed in this direction is based on both performance analysis and reliability factors which indicate that conventional technology has reached a practical limit. These LSI circuits will be, of course, specialized to Agency needs and requirements. Examples of these types of circuits that can be identified today are the 200K bit shift register for audio surveillance +~nd the processing chips for the MICROLORAN concept. The development effort will focus primarily on processing and fabricating technology with functional requirements being derived from more mission-oriented endeavors. Approved For Release 1999/Q~/~2 P88B00553R000100090009-1 Approved For Release 19 RDP88B00553R000100090009-1 Micropower Com onent Development There exist a significant number of passive components that require and deserve R&D attention, particularly in the micropower regime. One is the isolator/coupler requirement which is currently being investigated under the basic research effort. The need for such item is beyond question; however, the realization is by no means clearly established. Basic research also needs to be carried out in the area of micro- power timing functions or crystal development. Electronic circuits that are crystal-controlled are difficult a-t higher power levels but practically untenable at reasonable power efficiencies. Current efforts in the research area :have developed means and standards by which reasonably good devices may be selected (usually one out of 20) but no effort has been directed toward perfecting techniques for producing :predictable units of good quality. Although only two items have been used as examples, they each represent a substantial effort in R&D that will not be pursued by groups outside the Agency. In general, to the extent that resources allow, the microelectronics companies will attempt to develop those components that appear the most critical to rn?icropower operation. Some other examples that may be cited without discussion are low voltage tuning capacitors or diodes, low temperature co-efficient resistors and capacitors, micropower sensitors (positive temperature co-efficient resistive elements), and such other items that analysis shows to have become critical to successful opera- tion. Signal Sources Present efforts are directed toward low voltage. transistors up to and including S-band. However, the need can easily be identified for micropower devices (not necessarily transistors) at frequencies well into the tens-gigahertz frequency range. As the technology becomes available, emphasis will bye shifted into these regions of the spectrum. At same point between 5 and 10 GHz, the conventional transistor will most likely disappear and bulk effects will begin to dominate. This line of investigation will follow upon completion of tran- sistor developments which is by no means barren of fruitful developments. 6 Approved For Release 1999/0 ~ ?~ ~P88B00553R000100090009-1 _,~~'J.. i Approved For Release 19'~ . ~I -RDP88B00553R000100090009-1 Implications of Current Developments It should be noted that the current research effort con- tains several potentially dramatic program areas. Ranging from processing technology such as 50IS to linear CMOS devices they span the spectrum. In the former case, successful develop- ment will undoubtedly go unobserved except in the enhanced per- formance of the micropower digital circuitry. In the latter case, however, an entirely new area of endeavor might be dictated. It is, of course, obvious that linear CMOS circuits are not alone in this category. Within the resources available, it is the plan of this program to continue to develop those components and others like them to the point where relative importance can be clearly defined by the user group such as TSD, OEL, and OC. Approved For Release 1999/0 P88600553R000100090009-1

Active thermal control for electronics on Mars Rovers imposes a serious penalty in weight, volume, power consumption, and reliability. Thus, we propose that thermal control be eliminated for future Rovers. From a functional standpoint there is no reason that the electronics could not operate over the entire temperature range of the Martian environment, which can vary from a low of approximately equal -90 C to a high of approximately equal +20 C during the Martian night and day. The upper end of this range is well within that for conventional electronics. Although the lower end is considerably below that for which conventional--even high-reliability electronics is designed or tested, it is well established that electronic devices can operate to such low temperatures. The primary concern is reliability of the overall electronic system, especially in regard to the numerous daily temperature cycles that it would experience over the duration of a mission on Mars. Accordingly, key reliability issues have been identified for elimination of thermal control on future Mars Rovers. One of these is attachment of semiconductor die onto substrates and into packages. Die attachment is critical since it forms a mechanical, thermal and electrical interface between the electronic device and the substrate or package. This paper summarizes our initial investigation of existing information related to this issue, in order to form an opinion whether die attachment techniques exist, or could be developed with reasonable effort, to withstand the Mars thermal environment for a mission duration of approximately I year. Our conclusion, from a review of literature and personal contacts. is that die attachment can be made sufficiently reliable to satisfy the requirements of future Mars Rovers. Moreover, it appears that there are several possible techniques from which to choose and that the requirements could be met by judicious selection from existing methods using hard solders, soft solders, or organic adhesives. Thus from the standpoint of die attachment. it appears feasible to eliminate thermal control for Rover electronics. We recommend that this be further investigated and verified for the specific hardware and thermal conditions appropriate to Mars Rovers.

From the bitsavers.org collection, a scanned-in computer-related document. philco :: microelectronics :: Digital System Building Blocks

Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

From the bitsavers.org collection, a scanned-in computer-related document. motorola :: dataBooks :: 1968 microElectronics :: 07 MOS

This item represents a case in PACER, the U.S. Government's website for federal case data. If you wish to see the entire case, please consult PACER directly.

This item represents a case in PACER, the U.S. Government's website for federal case data. If you wish to see the entire case, please consult PACER directly.

This study examined how key selected Department of Energy (DOE) laboratory capabilities align with Department of Defense (DoD) microelectronics requirements. DoD microelectronics, electronic materials, and electronic integration technology requirements were identified in the annual Defense Technology Area Plan (DTAP). An analysis of open information was used to select the key DOE laboratories with focused activities in the microelectronics area. The selected organizations were visited by the study team. The resulting analysis shows that the selected DOE laboratories and facilities have strong microelectronics capabilities in a wide range of areas relevant to the DTAP areas examined. A number of opportunities are identified for cooperative DoD-DOE microelectronics activities. Recommendations are made on areas of further analysis particularly in better coordinating and managing the defense interests across agencies.

We summarize our progress towards developing a thin film edge emitter vacuum transistor capable of 1 GHz modulation. Design of the thin film edge emitter vacuum transistors was completed this quarter. The first fabrication run of these devices is presently in progress. In addition, two high frequency probes for a wafer testing of the vacuum transistors were characterized. Vacuum microelectronics, Edge emitter, Thin film technology, Triodes.

This document reports progress on the following: (1) Stress in evaporated and sputtered moly metalization reduced; (2) Two chips evaluated at moderate current levels (6 devices/chip) and coated with 200 angstroms of silicon and zirconium carbide respectively; (3) High frequency alumina redesigned; and (4) Masks for optical lithography for low resolution steps obtained for increased throughput.

The earth's magnetic field modulates the energy spectra of charged particle radiation reaching a satellite from outside the magnetosphere. This report describes how a transmission function is calculated that modulates the radiation environment in the interplanetary medium to obtain the orbit-averaged radiation environment at the skin of any spacecraft in a circular orbit. It is found that the location of the electronics package within the spacecraft may affect the soft upset rate.

This paper is a case study of the microelectronics industry. It is an attempt to look at the role that the federal government has played, and still plays, in the development of the industry, and at the outcomes of this intervention. The federal government's role has been important and wide-ranging. It has made investments in microelectronics research and development, supported the industry in its infancy as a first and major customer, and created a demand environment in which companies had incentives to advance the state of the art. Sometimes the government opted for high-risk high-return solutions to allow new technologies to develop. In return, the government was a beneficiary of the most advanced technology for its systems. However, as the market for microelectronics exploded, the relative position of government and other customers has changed. As companies turned to fill the ever-larger demand for electronics in the commercial marketplace, the government has found it more difficult to meet its requirements for specialized products. As a result it is once again investing in research and development directed specifically as its own applications. For much of their history, the U.S. microelectronics manufactures have dominated world markets. This has begun to change in recent years as Japanese manufactures have acquired significant and growing shares of these markets. The U.S. manufactures have asked the government to intervene in the international competition of their behalf.

Within the past two decades, the problem of counterfeit hardware has gained significant attention within the Department of Defense (DoD). Counterfeit electronics compromise national security systems as they may fail to meet durability requirements and/or contain malicious circuits [6, 16, 17]. This necessitates the development of methods to detect counterfeit electronics and prevent the counterfeit electronics from entering DoD systems. The DARPA TRUST program was established to address the need to verify integrated circuit (IC) electronics. This research describes the development of standard cell recognition (SCR) software intended to resolve conflicts in prior TRUST related applications of commercial software to verify IC designs. SCR software applications to circuits composed of up to 650 transistors are presented, and the resulting 90% SCR application success rate is discussed.

Topics Included in the Proceedings Include the Following: (1) "High-Speed and High-Frequency Devices"; (2) "Novel Devices"; (3) "Microwave/Millimeter Wave Devices"; (4) "Wide Bandgap Devices"; (5) "Circuit Applications, Device Fabrication and Characterization"; (6) "Systems Applications"; (7) "High-Speed ICS for Optical Communication Systems"; and (8) "Manufacturing".

The purpose of the newsletter (microminiaturized to MICRO-NOTES) is to promote the application of microelectronics in avionics equipment from technical information on evaluation, application, research and development, availability of microelectronic hardware, and standardization activities.

SGS THOMSON Microelectronics MK68901 (MFP) [Dec 1988]

SGS THOMSON Microelectronics MK68901 (MFP) [Dec 1988]

SGS THOMSON Microelectronics MK68901 (MFP) [Dec 1988]

MICROELECTRONICS SWITCH

16 p

Mathematical cost factors were generated for both hybrid microcircuit and printed wiring board packaging methods. A mathematical cost model was created for analysis of microcircuit fabrication costs. The costing factors were refined and reduced to formulae for computerization. Efficient methods were investigated for low cost packaging of LSI devices as a function of density and reliability. Technical problem areas such as wafer bumping, inner/outer leading bonding, testing on tape, and tape processing, were investigated.

Negative-resistance circuits with possible space flight applications are discussed. The basic design approach is to use impedance rotation, i.e., the conversion from capacitance to negative resistance, and from resistance to inductance by the phase shift of the transistor current gain at high frequencies. The subjects discussed in detail are the following: hybrid fabrication of VHF and UHF negative-resistance stages with lumped passive elements; formulation of measurement techniques to characterize transistors and to extend the frequency of negative-resistance transistor amplifiers to higher microwave frequencies; and derivation of transistor characteristics required to increase the frequency range of negative-resistance transistor stages.

At an earlier conference we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art CMOS technologies. In this presentation, we extend this discussion focusing on the following areas: (1) Device packaging, (2) Evolving physical single even upset mechanisms, (3) Device complexity, and (4) the goal of understanding the limitations and interpretation of radiation testing results.

A system for automatically inspecting an integrated circuit was developed. A device for shining a scanning narrow light beam at an integrated circuit to be inspected and another light beam at an accepted integrated circuit was included. A pair of photodetectors that receive light reflected from these integrated circuits, and a comparing system compares the outputs of the photodetectors.

A system for automatically inspecting an integrated circuit was developed. A device for shining a scanning narrow light beam at an integrated circuit to be inspected and another light beam at an accepted integrated circuit was included. A pair of photodetectors that receive light reflected from these integrated circuits, and a comparing system compares the outputs of the photodetectors.

1997 CD-ROM from Sun Microelectronics.  Contains presentations and datasheets for semiconductor products

Journal of Research of the National Institute of Standards and Technology

From the bitsavers.org collection, a scanned-in computer-related document. semi-tech microelectronics :: pied-piper :: Pied Piper Technical Reference Manual - Schematics2

Microelectronics Reliability 1990: Volume 30 , Issue CONTENTS. Digitized from IA1646613-04 . Previous issue: sim_microelectronics-reliability_1989_29_6_0 . Next issue: sim_microelectronics-reliability_1990_30_index_0 . Note: This issue has no cover

Microelectronics and Reliability 1996: Volume 36 , Issue Contents. Digitized from IA1646613-01 . Previous issue: sim_microelectronics-reliability_1997-12_37_12_0 . Next issue: sim_microelectronics-reliability_1998_38_contents_0 .

Microelectronics and Reliability 1996: Volume 36 , Issue Contents. Digitized from IA1646613-01 . Previous issue: sim_microelectronics-reliability_1997-12_37_12_0 . Next issue: sim_microelectronics-reliability_1998_38_contents_0 .

This item represents a case in PACER, the U.S. Government's website for federal case data. If you wish to see the entire case, please consult PACER directly.

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

No abstract available

This item represents a case in PACER, the U.S. Government's website for federal case data. If you wish to see the entire case, please consult PACER directly.

This item represents a case in PACER, the U.S. Government's website for federal case data. If you wish to see the entire case, please consult PACER directly.

This item represents a case in PACER, the U.S. Government's website for federal case data. If you wish to see the entire case, please consult PACER directly.

The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents. The 1993 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 170 publications, 193 presentations, and 84 New Technology Reports and patents.

It has recently been recognized that a single intensely ionizing particle can alter the information stored in a modern semiconductor memory and possibly do permanent damage to the microelectronic circuit involved. Such particles are common in nature and abundant in space. This report describes the natural particle environment in which modern space-borne electronics must operate, and provides a simple but accurate empirical model of that environment.

The contents of this report describe a method for assessing electromagnetic compatibility (EMC) of systems which contain microelectronics, i.e. new, complex digital equipments/devices as contracted with typical analog equipments/devices. It provides a basis for defining EMC performance criteria and operation of microelectronic systems and subsystems in an electromagnetic environment. A methodology is established which describes a step-by-step procedure for assessing EMC in microelectronics and for applying the performance criteria. An application of the methodology to a small subsystem is provided to assess the effectiveness of the methodology. There are still many unanswered questions concerning the impact of new microelectronic, integrated circuit, digital, microcircuit technology on EMC. This report represents the first steps taken to determine that impact and to establish a theoretical basis to provide the necessary technology to ensure EMC. (Author)