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A Gauss-Seidel waveform relaxation method is described for time-domain analysis of piecewise-linear circuits. The method relies on approximating both the nonlinear element characteristics and the voltage (or current) waveforms by piecewise-linear functions; and is suitable for timing analysis of large-scale integrated circuits. Keywords: theses; metal oxide semiconductors; large scale integration; linear differential equations; charts; schematic diagrams. (Author)

From the bitsavers.org collection, a scanned-in computer-related document. ti :: dataBooks :: 1994 TI Linear Circuits 3v Family Data Book

From the bitsavers.org collectio n, a scanned-in computer-related document. ti :: dataBooks :: 1984 TI Linear Circuits Data Book

From the bitsavers.org collection, a scanned-in computer-related document. seagate :: dataBooks :: 1990 Seagate Microelectronics Linear Integrated Circuits

From the bitsavers.org collection, a scanned-in computer-related document. fairchild :: dataBooks :: 1973 Fairchild Linear Integrated Circuits Data Catalog

From the bitsavers.org collection, a scanned-in computer-related document. fairchild :: dataBooks :: 1973 Fairchild Linear Integrated Circuits Data Catalog

We consider the problem of constructing fast and small binary adder circuits. Among widely-used adders, the Kogge-Stone adder is often considered the fastest, because it computes the carry bits for two $n$-bit numbers (where $n$ is a power of two) with a depth of $2\log_2 n$ logic gates, size $4 n\log_2 n$, and all fan-outs bounded by two. Fan-outs of more than two are avoided, because they lead to the insertion of repeaters for repowering the signal and additional depth in the physical implementation. However, the depth bound of the Kogge-Stone adder is off by a factor of two from the lower bound of $\log_2 n$. This bound is achieved asymptotically in two separate constructions by Brent and Krapchenko. Brent's construction gives neither a bound on the fan-out nor the size, while Krapchenko's adder has linear size, but can have up to linear fan-out. With a fan-out bound of two, neither construction achieves a depth of less than $2 \log_2 n$. In a further approach, Brent and Kung proposed an adder with linear size and fan-out two, but twice the depth of the Kogge-Stone adder. These results are 33-43 years old and no substantial theoretical improvement for has been made since then. In this paper we integrate the individual advantages of all previous adder circuits into a new family of full adders, the first to improve on the depth bound of $2\log_2 n$ while maintaining a fan-out bound of two. Our adders achieve an asymptotically optimum logic gate depth of $\log_2 n + o(\log_2 n)$ and linear size $\mathcal {O}(n)$.

We design a circuit structure with linear depth to implement an $n$-qubit Toffoli gate. The proposed construction uses a quadratic-size circuit consists of elementary 2-qubit controlled-rotation gates around the x axis and uses no ancilla qubit. Circuit depth remains linear in quantum technologies with finite-distance interactions between qubits. The suggested construction is related to the long-standing construction by Barenco et al. (Phys. Rev. A, 52: 3457-3467, 1995, arXiv:quant-ph/9503016), which uses a quadratic-size, quadratic-depth quantum circuit for an $n$-qubit Toffoli gate.

We design a circuit structure with linear depth to implement an $n$-qubit Toffoli gate. The proposed construction uses a quadratic-size circuit consists of elementary 2-qubit controlled-rotation gates around the x axis and uses no ancilla qubit. Circuit depth remains linear in quantum technologies with finite-distance interactions between qubits. The suggested construction is related to the long-standing construction by Barenco et al. (Phys. Rev. A, 52: 3457-3467, 1995, arXiv:quant-ph/9503016), which uses a quadratic-size, quadratic-depth quantum circuit for an $n$-qubit Toffoli gate.

We design a circuit structure with linear depth to implement an $n$-qubit Toffoli gate. The proposed construction uses a quadratic-size circuit consists of elementary 2-qubit controlled-rotation gates around the x axis and uses no ancilla qubit. Circuit depth remains linear in quantum technologies with finite-distance interactions between qubits. The suggested construction is related to the long-standing construction by Barenco et al. (Phys. Rev. A, 52: 3457-3467, 1995, arXiv:quant-ph/9503016), which uses a quadratic-size, quadratic-depth quantum circuit for an $n$-qubit Toffoli gate.

We design a circuit structure with linear depth to implement an $n$-qubit Toffoli gate. The proposed construction uses a quadratic-size circuit consists of elementary 2-qubit controlled-rotation gates around the x axis and uses no ancilla qubit. Circuit depth remains linear in quantum technologies with finite-distance interactions between qubits. The suggested construction is related to the long-standing construction by Barenco et al. (Phys. Rev. A, 52: 3457-3467, 1995, arXiv:quant-ph/9503016), which uses a quadratic-size, quadratic-depth quantum circuit for an $n$-qubit Toffoli gate.

We design a circuit structure with linear depth to implement an $n$-qubit Toffoli gate. The proposed construction uses a quadratic-size circuit consists of elementary 2-qubit controlled-rotation gates around the x axis and uses no ancilla qubit. Circuit depth remains linear in quantum technologies with finite-distance interactions between qubits. The suggested construction is related to the long-standing construction by Barenco et al. (Phys. Rev. A, 52: 3457-3467, 1995, arXiv:quant-ph/9503016), which uses a quadratic-size, quadratic-depth quantum circuit for an $n$-qubit Toffoli gate.

We design a circuit structure with linear depth to implement an $n$-qubit Toffoli gate. The proposed construction uses a quadratic-size circuit consists of elementary 2-qubit controlled-rotation gates around the x axis and uses no ancilla qubit. Circuit depth remains linear in quantum technologies with finite-distance interactions between qubits. The suggested construction is related to the long-standing construction by Barenco et al. (Phys. Rev. A, 52: 3457-3467, 1995, arXiv:quant-ph/9503016), which uses a quadratic-size, quadratic-depth quantum circuit for an $n$-qubit Toffoli gate.

We design a circuit structure with linear depth to implement an $n$-qubit Toffoli gate. The proposed construction uses a quadratic-size circuit consists of elementary 2-qubit controlled-rotation gates around the x axis and uses no ancilla qubit. Circuit depth remains linear in quantum technologies with finite-distance interactions between qubits. The suggested construction is related to the long-standing construction by Barenco et al. (Phys. Rev. A, 52: 3457-3467, 1995, arXiv:quant-ph/9503016), which uses a quadratic-size, quadratic-depth quantum circuit for an $n$-qubit Toffoli gate.

We design a circuit structure with linear depth to implement an $n$-qubit Toffoli gate. The proposed construction uses a quadratic-size circuit consists of elementary 2-qubit controlled-rotation gates around the x axis and uses no ancilla qubit. Circuit depth remains linear in quantum technologies with finite-distance interactions between qubits. The suggested construction is related to the long-standing construction by Barenco et al. (Phys. Rev. A, 52: 3457-3467, 1995, arXiv:quant-ph/9503016), which uses a quadratic-size, quadratic-depth quantum circuit for an $n$-qubit Toffoli gate.

The general purpose Finite Element Program COSMIC NASTRAN currently has the ability to model magnetic circuits with constant permeablilities. An approach was developed which, through small modifications to the program, allows modelling of non-linear magnetic devices including soft magnetic materials, permanent magnets and coils. Use of the NASTRAN code resulted in output which can be used for subsequent mechanical analysis using a variation of the same computer model. Test problems were found to produce theoretically verifiable results.

xviii, 594 pages 25 cm

xviii, 594 pages 25 cm

A new Mixed-Signal Built-in self-test approach that is based upon the step response of a reconfigurable (or multifunction) analog block is presented in this paper. The technique requires the overlapping step response of the Circuit Under Test (CUT) for two circuit configurations. Each configuration can be realized by changing the topology of the CUT or by sampling two CUT nodes with differing step responses. The technique can effectively detect both soft and hard faults and does not require an analog-to-digital converter (ADC) and/or digital-to-analog converter(DAC). It also does not require any precision voltage sources or comparators. This approach does not require any additional analog circuits to realize the test signal generator and sample circuits. The paper is concluded with the application of the proposed approach to a circuit found in the work of Epstein et al and two ITC 97 analog benchmark circuits.

A new Mixed-Signal Built-in self-test approach that is based upon the step response of a reconfigurable (or multifunction) analog block is presented in this paper. The technique requires the overlapping step response of the Circuit Under Test (CUT) for two circuit configurations. Each configuration can be realized by changing the topology of the CUT or by sampling two CUT nodes with differing step responses. The technique can effectively detect both soft and hard faults and does not require an analog-to-digital converter (ADC) and/or digital-to-analog converter(DAC). It also does not require any precision voltage sources or comparators. This approach does not require any additional analog circuits to realize the test signal generator and sample circuits. The paper is concluded with the application of the proposed approach to a circuit found in the work of Epstein et al and two ITC 97 analog benchmark circuits.

Texas Instruments Linear Circuits Data Acquisition And Conversion Data Book Volume 2 1989

Texas Instruments Linear Circuits Data Acquisition And Conversion Data Book Volume 2 1989

Texas Instruments Linear Circuits Data Acquisition And Conversion Data Book Volume 2 1989

From the bitsavers.org collectio n, a scanned-in computer-related document. components :: ti :: dataBooks :: 1985 TI Linear and Interface Circuits Applications Volume 2

Bell System Technical Journal, 50: 4. April 1971 pp 1149-1171. Statistical Circuit Design: Linear Circuits and Statistical Design. (Semmelman, C.L.; Walsh, E.D.; Daryanani, G.T.)

From the bitsavers.org collectio n, a scanned-in computer-related document. components :: panasonic :: 1983 Panasonic Linear Circuits

From the bitsavers.org collectio n, a scanned-in computer-related document. components :: panasonic :: 1983 Panasonic Linear Circuits

From the bitsavers.org collectio n, a scanned-in computer-related document. components :: panasonic :: 1983 Panasonic Linear Circuits

In this paper we consider circuit synthesis for n-wire linear reversible circuits using the C-NOT gate library. These circuits are an important class of reversible circuits with applications to quantum computation. Previous algorithms, based on Gaussian elimination and LU-decomposition, yield circuits with O(n^2) gates in the worst-case. However, an information theoretic bound suggests that it may be possible to reduce this to as few as O(n^2/log n) gates. We present an algorithm that is optimal up to a multiplicative constant, as well as Theta(log n) times faster than previous methods. While our results are primarily asymptotic, simulation results show that even for relatively small n our algorithm is faster and yields more efficient circuits than the standard method. Generically our algorithm can be interpreted as a matrix decomposition algorithm, yielding an asymptotically efficient decomposition of a binary matrix into a product of elementary matrices.

We study representations of tropical linear spaces as intersections of tropical hyperplanes of circuits. For several classes of matroids, we describe minimal tropical bases. We also show that every realizable tropical linear space has a natural, tropically linear parametrization involving its cocircuits.

We study representations of tropical linear spaces as intersections of tropical hyperplanes of circuits. For several classes of matroids, we describe minimal tropical bases. We also show that every realizable tropical linear space has a natural, tropically linear parametrization involving its cocircuits.

We study representations of tropical linear spaces as intersections of tropical hyperplanes of circuits. For several classes of matroids, we describe minimal tropical bases. We also show that every realizable tropical linear space has a natural, tropically linear parametrization involving its cocircuits.

Linear and interface circuits from Texas Instruments

Katzenelson's algorithm and its variants are powerful tools for solving nonlilnear networks which are modeled by piecewise-linear characteristics. But, when nonlinear network sizes become very large such as in VLSI chip cases, excessive cpu time and storage are required during the solution process using Katzenelson's algorithms. Decomposition techniques are necessary in the analysis of VLSI circuits. Nonlinear Gauss-Seidel iterative methods are often adopted in solving large decomposed system of equations. However, Nonlinear Gauss-Seidel iterative process will converge under certain conditions. The combination of Katzenelson and Gauss-Seidel methods proposed here takes advantages of both Katzenelson and the Gauss-Seidel methods. It decomposes the whole network into small subcircuits by Gauss-Seidel method and solves these small subcircuits by Katzenelson's algorithm separately (or even these subcircuits can be solved by Katzenelson's at same time with parallel processors, if Jacobi Method is used as decompositions technique). The convergence properties of the method is studies in detail, and examples are given here to illustrate the approach in the dc analysis of bipolar and MOS transistors circuits: Keywords: Nonlinear integrated circuits; Convergence; Computer programs; Schematic diagrams.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.

An integrated MOS RF amplifier-mixer circuit, capable of receiving FM signals in the 30- to 76-megahertz frequency range, was developed successfully. The front end IC essentially met or surpassed contract specifications on sensitivity, power gain, desensitization, and spurious response. The performance of the integrated-circuit compared favorably to results obtained from circuits using discrete devices. The circuit, which consists of seven p-channel MOS enhancement devices fabricated on a common substrate, uses MOS dual-gate devices in both the direct-coupled RF amplifier and mixer stages. The MOS transistors necessary to bias these stages are included on the 30-by 40-mil pellet. The RF amplifier-mixer IC was evaluated in a typical military FM receiver at 30 and 76 megahertz. The circuit exhibited an excellent sensitivity of 0.35 and 0.4 of a hard microvolt at 30 and 76 megahertz, respectively, for a 10-dB signal plus noise-to-noise ratio at the audio output. Power gain and dissipation was 34.0 dB and approximately 100 milliwatts, respectively, for a 9-volt supply at both 30 and 76 megahertz. Desensitization results were very good with interfering signal levels, removed by 10 percent from the desired channel frequency, of at least 122 dB above the reference level required to degrade the 10-dB signal plus noise-to-noise ratio to 6 dB. The integrated RF amplifier-mixer was operated in a varactor-tuned assembly, and performed well over the 63- to 76-megahertz band.