Explore: High Electron Mobility Transistors.

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor

junction High-electron-mobility transistor (HEMT): GaN (gallium nitride), SiC (silicon carbide), Ga2O3 (gallium oxide), GaAs (gallium arsenide) transistors, MOSFETs

for each, or a large number of electrons with a small mobility for each. For semiconductors, the behavior of transistors and other devices can be very

Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The

curvature raises the effective mass of the electrons and lowers electron mobility. The drop in drift velocity at high electric fields due to intervalley scattering

T/R modules are made with GaAs HEMT HPA (gallium arsenide High Electron Mobility Transistor High Power Amplifiers) Captor-E ECRS Mk1: Interface and integration

were able to manufacture silicon dioxide field effect transistors; the first planar transistors, in which drain and source were adjacent at the same surface

this ultimately means that less energy is lost to heat. GaN high-electron-mobility transistors (HEMT) have been offered commercially since 2006, and have

(gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies

(metal–oxide–semiconductor field-effect transistors). When the transistor is in inversion mode, the electrons underneath the gate oxide are confined to