Tunnel field-effect transistors (TFET): modelling and simulations - Info and Reading Options
By Mamidala Jagadesh Kumar, Rajat Vishnoi and Pratyush Pandey
"Tunnel field-effect transistors (TFET): modelling and simulations" was published by Wiley in 2016 - Hoboken.
“Tunnel field-effect transistors (TFET): modelling and simulations” Metadata:
- Title: ➤ Tunnel field-effect transistors (TFET): modelling and simulations
- Authors: Mamidala Jagadesh KumarRajat VishnoiPratyush Pandey
- Publisher: Wiley
- Publish Date: 2016
- Publish Location: Hoboken
Edition Identifiers:
- ISBN-13: 9781119246312
- All ISBNs: 9781119246312
AI-generated Review of “Tunnel field-effect transistors (TFET): modelling and simulations”:
"Tunnel field-effect transistors (TFET): modelling and simulations" Description:
Open Data:
"This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"
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