Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication - Info and Reading Options
By D. R. Myers
"Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication" was published by U.S. Dept. of Commerce, National Bureau of Standards in 1980 - Washington, D.C, it has 29 pages and the language of the book is English.
“Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication” Metadata:
- Title: ➤ Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication
- Author: D. R. Myers
- Language: English
- Number of Pages: 29
- Publisher: ➤ U.S. Dept. of Commerce, National Bureau of Standards
- Publish Date: 1980
- Publish Location: Washington, D.C
“Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication” Subjects and Themes:
- Subjects: ➤ Defects - Neutron transmutation Semiconductor doping - Power semiconductors - Silicon - Thyristors - Semiconductor doping - Neutron irradiation
Edition Specifications:
- Pagination: iii, 29 p. ;
Edition Identifiers:
- The Open Library ID: OL4236014M - OL5319284W
- Online Computer Library Center (OCLC) ID: 6348908
- Library of Congress Control Number (LCCN): 80600047
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