Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
By Farzan Jazaeri and Jean-Michel Sallese
"Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors" is published by Cambridge University Press in 2018 - Cambridge, United Kingdom New York, NY, USA, the book is classified in Technology & Engineering genre, it has 255 pages and the language of the book is English.
“Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors” Metadata:
- Title: ➤ Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
- Authors: Farzan JazaeriJean-Michel Sallese
- Language: English
- Number of Pages: 255
- Is Family Friendly: Yes - No Mature Content
- Publisher: Cambridge University Press
- Publish Date: 2018
- Publish Location: ➤ Cambridge, United Kingdom New York, NY, USA
- Genres: Technology & Engineering
“Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors” Subjects and Themes:
- Subjects: Field effect transistors - Wire
Edition Identifiers:
- Google Books ID: NPFKDwAAQBAJ
- The Open Library ID: OL40457331M - OL22539357W
- ISBN-13: 9781108557535 - 9781316676899 - 9781107162044
- ISBN-10: 1108557538
- All ISBNs: 9781108557535 - 1108557538 - 9781316676899 - 9781107162044
AI-generated Review of “Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors”:
Snippets and Summary:
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs).
"Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors" Description:
Google Books:
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
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- Public Domain: No
- Availability Status: Partially available
- Availability Status for country: US.
- Available Formats: Text is not avialbe, image copy is available.
- Google Books Link: Google Books
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