Low Power and Reliable SRAM Memory Cell and Array Design - Info and Reading Options
By Koichiro Ishibashi
"Low Power and Reliable SRAM Memory Cell and Array Design" was published by Springer-Verlag Berlin Heidelberg in 2011 - Berlin, Heidelberg, it has 156 pages and the language of the book is English.
“Low Power and Reliable SRAM Memory Cell and Array Design” Metadata:
- Title: ➤ Low Power and Reliable SRAM Memory Cell and Array Design
- Author: Koichiro Ishibashi
- Language: English
- Number of Pages: 156
- Publisher: ➤ Springer-Verlag Berlin Heidelberg
- Publish Date: 2011
- Publish Location: Berlin, Heidelberg
“Low Power and Reliable SRAM Memory Cell and Array Design” Subjects and Themes:
- Subjects: ➤ Engineering - Electronics - Semiconductors - Reliability (engineering) - Low voltage integrated circuits - Semiconductor storage devices - Integrated circuits - Large scale integration - Design and construction - Integrated circuits, very large scale integration - Computer storage devices
Edition Specifications:
- Format: [electronic resource] /
Edition Identifiers:
- The Open Library ID: OL25546829M - OL16943749W
- Online Computer Library Center (OCLC) ID: 773622403
- Library of Congress Control Number (LCCN): 2011935344
- ISBN-13: 9783642195679 - 9783642195686
- All ISBNs: 9783642195679 - 9783642195686
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