Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes - Info and Reading Options
By Alvin H. Sher
"Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes" was published by U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off. in 1975 - Washington, it has 20 pages and the language of the book is English.
“Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes” Metadata:
- Title: ➤ Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes
- Author: Alvin H. Sher
- Language: English
- Number of Pages: 20
- Publisher: ➤ U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off.
- Publish Date: 1975
- Publish Location: Washington
“Improved infrared response technique for detecting defects and impurities in germanium and silicon p-i-n diodes” Subjects and Themes:
- Subjects: Defects - Germanium diodes - Infrared technology - Silicon diodes
Edition Specifications:
- Pagination: iv, 20 p. :
Edition Identifiers:
- The Open Library ID: OL5183343M - OL6298181W
- Online Computer Library Center (OCLC) ID: 1177659
- Library of Congress Control Number (LCCN): 75001210
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