Grid adaption for the stationary two-dimensional drift diffusion model in semiconductor device simulation - Info and Reading Options
By Bernhard Schmithüsen
"Grid adaption for the stationary two-dimensional drift diffusion model in semiconductor device simulation" was published by Hartung-Gorre in 2002 - Konstanz, it has 160 pages and the language of the book is ger.
“Grid adaption for the stationary two-dimensional drift diffusion model in semiconductor device simulation” Metadata:
- Title: ➤ Grid adaption for the stationary two-dimensional drift diffusion model in semiconductor device simulation
- Author: Bernhard Schmithüsen
- Language: ger
- Number of Pages: 160
- Publisher: Hartung-Gorre
- Publish Date: 2002
- Publish Location: Konstanz
“Grid adaption for the stationary two-dimensional drift diffusion model in semiconductor device simulation” Subjects and Themes:
- Subjects: Semiconductors - Computer simulation - Mathematical models - Numerical grid generation (Numerical analysis)
Edition Specifications:
- Pagination: viii, 160 p.
Edition Identifiers:
- The Open Library ID: OL31558049M - OL23835369W
- Library of Congress Control Number (LCCN): 2002492483
- ISBN-10: 3896497731
- All ISBNs: 3896497731
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