"Fundamentals of Tunnel Field-Effect Transistors" - Information and Links:

Fundamentals of Tunnel Field-Effect Transistors

"Fundamentals of Tunnel Field-Effect Transistors" is published by Taylor & Francis Group in 2016 - Boca Raton, Fla, it has 292 pages and the language of the book is English.


“Fundamentals of Tunnel Field-Effect Transistors” Metadata:

  • Title: ➤  Fundamentals of Tunnel Field-Effect Transistors
  • Authors:
  • Language: English
  • Number of Pages: 292
  • Publisher: Taylor & Francis Group
  • Publish Date:
  • Publish Location: Boca Raton, Fla

“Fundamentals of Tunnel Field-Effect Transistors” Subjects and Themes:

Edition Identifiers:

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"Fundamentals of Tunnel Field-Effect Transistors" Description:

Open Data:

1. CMOS scaling -- 2. Quantum tunneling -- 3. Basics of tunnel field-effect transistor -- 4. Boosting ON-current in tunnel field-effect transistor -- 5. III-V tunnel field effect transistor -- 6. Carbon-based tunnel field-effect transistor -- 7. Nanowire tunnel field-effect transistor -- 8. Models for tunnel field-effect transistor -- 9. Applications of tunnel field-effect transistor -- 10. Future perspective

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