Fundamentals of Tunnel Field-Effect Transistors
By Sneh Saurabh and Mamidala Jagadesh Kumar
"Fundamentals of Tunnel Field-Effect Transistors" is published by Taylor & Francis Group in 2016 - Boca Raton, Fla, it has 292 pages and the language of the book is English.
“Fundamentals of Tunnel Field-Effect Transistors” Metadata:
- Title: ➤ Fundamentals of Tunnel Field-Effect Transistors
- Authors: Sneh SaurabhMamidala Jagadesh Kumar
- Language: English
- Number of Pages: 292
- Publisher: Taylor & Francis Group
- Publish Date: 2016
- Publish Location: Boca Raton, Fla
“Fundamentals of Tunnel Field-Effect Transistors” Subjects and Themes:
- Subjects: ➤ Integrated circuits - Nanostructured materials - Tunnel field-effect transistors - Design and construction - Low voltage integrated circuits - Transistors à effet tunnel - Circuits intégrés - Conception et construction - Nanomatériaux - Circuits intégrés à faible consommation - TECHNOLOGY & ENGINEERING - Mechanical
Edition Identifiers:
- The Open Library ID: OL33645870M - OL21319493W
- ISBN-13: 9781315367354 - 9781315331232 - 9781498767163
- All ISBNs: 9781315367354 - 9781315331232 - 9781498767163
AI-generated Review of “Fundamentals of Tunnel Field-Effect Transistors”:
"Fundamentals of Tunnel Field-Effect Transistors" Description:
Open Data:
1. CMOS scaling -- 2. Quantum tunneling -- 3. Basics of tunnel field-effect transistor -- 4. Boosting ON-current in tunnel field-effect transistor -- 5. III-V tunnel field effect transistor -- 6. Carbon-based tunnel field-effect transistor -- 7. Nanowire tunnel field-effect transistor -- 8. Models for tunnel field-effect transistor -- 9. Applications of tunnel field-effect transistor -- 10. Future perspective
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