Fundamentals of Tunnel Field-Effect Transistors - Info and Reading Options
By Sneh Saurabh and Mamidala Jagadesh Kumar
"Fundamentals of Tunnel Field-Effect Transistors" was published by Taylor & Francis Group in 2016 - Boca Raton, it has 292 pages and the language of the book is English.
“Fundamentals of Tunnel Field-Effect Transistors” Metadata:
- Title: ➤ Fundamentals of Tunnel Field-Effect Transistors
- Authors: Sneh SaurabhMamidala Jagadesh Kumar
- Language: English
- Number of Pages: 292
- Publisher: Taylor & Francis Group
- Publish Date: 2016
- Publish Location: Boca Raton
“Fundamentals of Tunnel Field-Effect Transistors” Subjects and Themes:
- Subjects: ➤ Integrated circuits - Nanostructured materials - Tunnel field-effect transistors - Design and construction - Low voltage integrated circuits - Transistors à effet tunnel - Circuits intégrés - Conception et construction - Nanomatériaux - Circuits intégrés à faible consommation - TECHNOLOGY & ENGINEERING - Mechanical
Edition Identifiers:
- The Open Library ID: OL33630165M - OL21319493W
- ISBN-13: 9781498767163 - 9781498767132
- All ISBNs: 9781498767163 - 9781498767132
AI-generated Review of “Fundamentals of Tunnel Field-Effect Transistors”:
"Fundamentals of Tunnel Field-Effect Transistors" Description:
Open Data:
"During the last decade, there has been a great deal of interest in TFETs. To the best authors' knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator"--
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