Epitaxy of Semiconductors - Info and Reading Options
Introduction to Physical Principles
By Udo W. Pohl
"Epitaxy of Semiconductors" is published by Springer Berlin Heidelberg in 2013 - Berlin, Heidelberg, it has 326 pages and the language of the book is English.
“Epitaxy of Semiconductors” Metadata:
- Title: Epitaxy of Semiconductors
- Author: Udo W. Pohl
- Language: English
- Number of Pages: 326
- Publisher: Springer Berlin Heidelberg
- Publish Date: 2013
- Publish Location: Berlin, Heidelberg
- Dewey Decimal Classification: 537.622
- Library of Congress Classification: QC610.9-611.8QD921 .P564 2013
“Epitaxy of Semiconductors” Subjects and Themes:
- Subjects: ➤ Physical organic chemistry - Semiconductors - Optical and Electronic Materials - Physical and theoretical Chemistry - Optical materials - Crystallography - Physics - Applied and Technical Physics - Epitaxy
Edition Specifications:
- Format: [electronic resource] :
- Pagination: ➤ XIV, 326 p. 213 illus., 57 illus. in color.
Edition Identifiers:
- The Open Library ID: OL27036832M - OL19847995W
- Library of Congress Control Number (LCCN): 2012953380
- ISBN-13: 9783642329708
- All ISBNs: 9783642329708
AI-generated Review of “Epitaxy of Semiconductors”:
"Epitaxy of Semiconductors" Table Of Contents:
- 1- Epitaxy
- 2- Structural Properties of Heterostructures
- 3- Electronic Properties of Heterostructures
- 4- Thermodynamics of Epitaxial Layer-Growth
- 5- Atomistic Aspects of Epitaxial Layer Growth
- 6- Doping, Diffusion, and Contacts
- 7- Methods of Epitaxy.
"Epitaxy of Semiconductors" Description:
The Open Library:
Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
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