Downloads & Free Reading Options - Results

This report covers work on enhanced electron injection into SiO2, studies of limitations on the number of useful write/erase cycles for EAROS devices due to electron trapping in the SiO2, the physics and design of EAROS devices using Si-rich SiO2 charge injectors, and the capture and release of electrons on Na(+)-related sites in SiO2. An automatic system is described for making write/erase cycling measurements of EAROS devices.

These papers discuss the effects of radiation, Heat treatment, Thickness, Measuring temperature, impurity content on the electron trapping characteristics of Si02. The results of a comprehensive study of the photo conductivity and photo transmission of Si02 are also included that make it possible to determine the band gap. The generation of donor states near the Si- Si02 interface is described with a discussion of two alternate mechanisms involving excitons or hydrogen diffusion.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

This document summarizes activities under ONR Contract: N00014-86-C- 0780, under which equilibrium and nonequilibrium electron and hole transport in micron and submicron structures were studied via a wide range of numerical procedures. These included Monte Carlo methods, moments of the Boltzmann transport equation, Schrodinger's equation and the quantum Liouville equation in the coordinate representation. While all of the studies have resulted in a large collection of publications, the basic theme of the studies was the determination of the physics of device operation and the influence of small structure size on this operation. The most recent activities have involved the quantum Liouville equation with emphasis on dissipation and the calculation of current. This document includes a description of quantum transport via the quantum Liouville equation, as we now understand it, as well as a brief summary of the previous activities involving larger submicron devices. While the principle goal of this study was elucidating the physics and operation of nanoscale devices, a continuing requirement was that all algorithms be menu driven and accessible to device scientists and engineers. The quantum transport algorithm is accessible on UNIX workstations and in a PC Windows format.

This document summarizes activities under ONR Contract: N00014-86-C- 0780, under which equilibrium and nonequilibrium electron and hole transport in micron and submicron structures were studied via a wide range of numerical procedures. These included Monte Carlo methods, moments of the Boltzmann transport equation, Schrodinger's equation and the quantum Liouville equation in the coordinate representation. While all of the studies have resulted in a large collection of publications, the basic theme of the studies was the determination of the physics of device operation and the influence of small structure size on this operation. The most recent activities have involved the quantum Liouville equation with emphasis on dissipation and the calculation of current. This document includes a description of quantum transport via the quantum Liouville equation, as we now understand it, as well as a brief summary of the previous activities involving larger submicron devices. While the principle goal of this study was elucidating the physics and operation of nanoscale devices, a continuing requirement was that all algorithms be menu driven and accessible to device scientists and engineers. The quantum transport algorithm is accessible on UNIX workstations and in a PC Windows format.

This document summarizes activities under ONR Contract: N00014-86-C- 0780, under which equilibrium and nonequilibrium electron and hole transport in micron and submicron structures were studied via a wide range of numerical procedures. These included Monte Carlo methods, moments of the Boltzmann transport equation, Schrodinger's equation and the quantum Liouville equation in the coordinate representation. While all of the studies have resulted in a large collection of publications, the basic theme of the studies was the determination of the physics of device operation and the influence of small structure size on this operation. The most recent activities have involved the quantum Liouville equation with emphasis on dissipation and the calculation of current. This document includes a description of quantum transport via the quantum Liouville equation, as we now understand it, as well as a brief summary of the previous activities involving larger submicron devices. While the principle goal of this study was elucidating the physics and operation of nanoscale devices, a continuing requirement was that all algorithms be menu driven and accessible to device scientists and engineers. The quantum transport algorithm is accessible on UNIX workstations and in a PC Windows format.

This document summarizes activities under ONR Contract: N00014-86-C- 0780, under which equilibrium and nonequilibrium electron and hole transport in micron and submicron structures were studied via a wide range of numerical procedures. These included Monte Carlo methods, moments of the Boltzmann transport equation, Schrodinger's equation and the quantum Liouville equation in the coordinate representation. While all of the studies have resulted in a large collection of publications, the basic theme of the studies was the determination of the physics of device operation and the influence of small structure size on this operation. The most recent activities have involved the quantum Liouville equation with emphasis on dissipation and the calculation of current. This document includes a description of quantum transport via the quantum Liouville equation, as we now understand it, as well as a brief summary of the previous activities involving larger submicron devices. While the principle goal of this study was elucidating the physics and operation of nanoscale devices, a continuing requirement was that all algorithms be menu driven and accessible to device scientists and engineers. The quantum transport algorithm is accessible on UNIX workstations and in a PC Windows format.

This document summarizes activities under ONR Contract: N00014-86-C- 0780, under which equilibrium and nonequilibrium electron and hole transport in micron and submicron structures were studied via a wide range of numerical procedures. These included Monte Carlo methods, moments of the Boltzmann transport equation, Schrodinger's equation and the quantum Liouville equation in the coordinate representation. While all of the studies have resulted in a large collection of publications, the basic theme of the studies was the determination of the physics of device operation and the influence of small structure size on this operation. The most recent activities have involved the quantum Liouville equation with emphasis on dissipation and the calculation of current. This document includes a description of quantum transport via the quantum Liouville equation, as we now understand it, as well as a brief summary of the previous activities involving larger submicron devices. While the principle goal of this study was elucidating the physics and operation of nanoscale devices, a continuing requirement was that all algorithms be menu driven and accessible to device scientists and engineers. The quantum transport algorithm is accessible on UNIX workstations and in a PC Windows format.

This document summarizes activities under ONR Contract: N00014-86-C- 0780, under which equilibrium and nonequilibrium electron and hole transport in micron and submicron structures were studied via a wide range of numerical procedures. These included Monte Carlo methods, moments of the Boltzmann transport equation, Schrodinger's equation and the quantum Liouville equation in the coordinate representation. While all of the studies have resulted in a large collection of publications, the basic theme of the studies was the determination of the physics of device operation and the influence of small structure size on this operation. The most recent activities have involved the quantum Liouville equation with emphasis on dissipation and the calculation of current. This document includes a description of quantum transport via the quantum Liouville equation, as we now understand it, as well as a brief summary of the previous activities involving larger submicron devices. While the principle goal of this study was elucidating the physics and operation of nanoscale devices, a continuing requirement was that all algorithms be menu driven and accessible to device scientists and engineers. The quantum transport algorithm is accessible on UNIX workstations and in a PC Windows format.

This document summarizes activities under ONR Contract: N00014-86-C- 0780, under which equilibrium and nonequilibrium electron and hole transport in micron and submicron structures were studied via a wide range of numerical procedures. These included Monte Carlo methods, moments of the Boltzmann transport equation, Schrodinger's equation and the quantum Liouville equation in the coordinate representation. While all of the studies have resulted in a large collection of publications, the basic theme of the studies was the determination of the physics of device operation and the influence of small structure size on this operation. The most recent activities have involved the quantum Liouville equation with emphasis on dissipation and the calculation of current. This document includes a description of quantum transport via the quantum Liouville equation, as we now understand it, as well as a brief summary of the previous activities involving larger submicron devices. While the principle goal of this study was elucidating the physics and operation of nanoscale devices, a continuing requirement was that all algorithms be menu driven and accessible to device scientists and engineers. The quantum transport algorithm is accessible on UNIX workstations and in a PC Windows format.

The Physics of Semiconductor Devices, 2nd edition.

The Physics of Semiconductor Devices, 2nd edition.

This report covers the high current injection into SiO2 using Si rich SiO2, the use of Raman scattering to observe amorphous Si in Si rich SiO2 and the crystallization of this amorphous Si at high temperatures, the use of attenuated total reflectance measurements to study Si rich SiO2, measurements of physical characteristics of oxides grown using high pressure oxidation, and the description of an automatic tester developed for use in electron and hole trapping studies.

This report contains a discussion of the effect of the gate metal on the build up of interface states at the Si-Si02 interface. A method for reducing electron trapping in Si02 is described that significantly increases the cyclability of electrically-alterable read-only storage devices. A new low voltage electroluminescent device has been built that uses Si rich Si02 charge injectors. Photon-assisted-tunneling and internal photoemission measurements have been made on metal-oxide-semiconductor samples. A quantum mechanical image force theory has been used to explain the results. Studies of the temperature dependence of the oxidation rate of silicon indicate that there are two oxidant species responsible.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

Physical mechanisms that cause semiconductor devices to fail from electrical overstress--particularly, EMP-induced electrical stress--are described in light of the current literature and the authors' own research. A major concern is the cause and effects of second breakdown phenomena in p-n junction devices. Models of failure thresholds are evaluated for their inherent errors and for their ability to represent the relevant physics. Finally, the response models that relate electromagnetic stress parameters to appropriate failure-threshold parameters are discussed. (Author)

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

This work includes a study of the morphology associated with the oxidation of polycrystalline silicon, a description of moderate field charge injectors using silicon rich SiO2, a technique for studying trapping characteristics using these charge injectors and a review paper on radiation damage in SiO2.or)

The papers enclosed with this report include: a new method for studying hot electron energy distributions in SiO2, plasma enhanced chemical vapor deposition of Si-rich SiO2, the use of Si-rich SiO2 to greatly reduce electron trapping effects, the use of Si-rich SiO2 to increase the yield of thin film capacitors, ellipsometry measurements of polycrystalline silicon films and the use of a delay time technique to measure the diffusion of the oxidant in SIO2 films.

The enclosed papers discuss the trapped hole location and annihilation in Si, current and C-V instabilities in SiO2 at high fields, annealing of neutral electron traps in irradiated oxides, Al implanted into the SiO2 layer of MOS structures, electron trapping as a result of Al implantation, the initial oxidation regime of silicon oxidation and the electronic structure of SiO2, SixGe(1-x)O2, GeO2.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

The study encompasses a broad examination of transport in submicron and near-micron semiconductor devices through implementation of the moments of the Boltzmann transport equation and the semiconductor drift and diffusion equation. The study utilized advanced algorithms developed at Scientific Research Associates, and recommends development of a network of user based algorithms for closely combined theoretical/experimental interactions. Keywords: Boltzmann transport, Transients, Overshoot, Gallium arsenides, Silicon.

The enclosed papers discuss the trapped hole location and annihilation in Si, current and C-V instabilities in SiO2 at high fields, annealing of neutral electron traps in irradiated oxides, Al implanted into the SiO2 layer of MOS structures, electron trapping as a result of Al implantation, the initial oxidation regime of silicon oxidation and the electronic structure of SiO2, SixGe1-xO2, GeO2.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

The current papers describe the use of a graded insulator to facilitate characterization in charge storage devices, the annealing of radiation induced positive charge, a comprehensive treatment of electron trapping and detrapping in As implanted SiO2, characterization of the electron traps in SiO2 as influenced by processing procedures, and a study of hole trapping in the bulk of ion implanted SiO2.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

The current papers describe the oxidation of heavily doped silicon, the location of implanted ions in Si02, a light activated storage device (LASD) and exciton model for Si-Si02 interface state generation and electron trapping and photo detrapping on sites related to As implantation in Si02.

This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.

The enclosed paper discuss the trapped hole location and annihilation in Si, current and C-V instabilities in Si02 at high fields, annealing of neutral electron traps in irradiated oxides, A1 implanted into the Si02 layer of MOS structures, electron trapping as a result of A1 implanation, the initial oxidation regime of silicon oxidation and the electronic structure of Si02, SixGe1-x02, Ge02.

The evolutionary decrease in the size of an individual semiconductor device continues with no apparent end of the process in sight. As a consequence, it is quite likely that critical dimensions will soon be comparable to quantum coherence lengths for the particles 'Involved in the transport within the device. Generally, quantum transport differs from semi-classical transport in the utilization of a quantum kinetic equation (as opposed to the Boltzmann transport equation). These quantum kinetic equations can be developed for the density matrix, the Wigner distribution function, and real-time Green's functions, as well as for many reduced approximations to these quantities. In this review, we study how these various approaches are connected as well as how they offer different views into the quantum behavior within devices.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.

These papers discuss electron trapping on sites related to H2O, the subsequent interface states generated by the trapping, and the reduction of these traps by high temperature nitrogen annealing. Radiation induced neutral trapping centers are discussed in relation to electron or hole capital on them. A new electrically alterable memory device using a dual electron injector structure composed of silicon-rich silicon dioxide and silicon dioxide layers is described. Material characterization is the Fi-rich SiO subscript 2 film, discussed using attenuated total reflectance, raman scattering, and optical absorption measurements. Detection of trap impurities, on Fi surfaces is studied using electron trapping character techniques.