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The objectives of this research are to develop analytical and computer-aided design techniques for monolithic microwave and millimeter-wave integrated circuits (MMIC & MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low-noise and medium-power microwave and millimeter-wave applications. Circuits to be considered include monolithic low-noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs have been developed, which include large-signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm-POSM has been developed and implemented in the general-purpose Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of large-signal non-linear circuits.

The objectives of this research are to develop analytical and computer-aided design techniques for monolithic microwave and millimeter-wave integrated circuits (MMIC & MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low-noise and medium-power microwave and millimeter-wave applications. Circuits to be considered include monolithic low-noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs have been developed, which include large-signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm-POSM has been developed and implemented in the general-purpose Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of large-signal non-linear circuits.

A broadband power amplifier design approach was used to design several monolithic microwave integrated circuits (MMICs) using a 0.13- m gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of these circuits were performed as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author. The design approach is taught by Dale Dawson in the JHU Power MMIC Design Course. This approach is useful for designing relatively broadband amplifiers that are limited only be the active transistor s Q .

The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

This final technical report presents results on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. New results include analytical and computer aided device models of GaAs MESFETs and HEMTs or MODFETs, new synthesis techniques for monolithic feedback and distributed amplifiers and a new nonlinear CAD program for MIMIC called CADNON. This program incorporates the new MESFET and HEMT model and has been successfully applied to the design of monolithic millimeter-wave mixers. Keywords: GaAs MESFETs, HEMTs, MODFETs, Monolithic microwave and Millimeter integrated circuits, MMIC, MIMIC, Computer aided design, and Large-signal device models.

The incorporation of voltage-tunable reactive elements in microwave monolithic integrated circuits (MMICs) would increase the performance, yield, producibility, adaptability, and affordability of these devices. These improvements would be very important for both low-volume applications, (e.g., space communications) and high-volume applications, (e.g., space-based radar). The feasibility of this concept will be explored by means of the computer-aided design and simulation facilities at The Aerospace Corporation. It is anticipated that some laboratory experiments in selected tuning concepts will be conducted. Tunability would broaden the adaptability of a single design to a wider range of frequency and bandwidth applications. Yield and adaptability relate to the ability to produce chips at an affordable cost.

Very high-speed picosecond range pulse transmission along a coplanar wave guide (CPW) integrated in a monolithic microwave integrated circuit (MMIC) is analyzed in the time domain, changing the input excitations, conductivity of the epitaxial layer, and terminating conditions. The time domain waveform is obtained by inverse discrete Fourier transform (IDFT) of the frequency domain data, namely, complex characteristic impedance and propagation constant. The full wave mode-matching method (MMM) is employed to analyze the dispersion of the CPW. A simple wide band matching scheme is found to be effective to make the slow-wave CPW a viable circuit element in applications such as a delay line or an interconnection line. Knowing the device processing data and physical dimensions, a designer should benefit from the present analysis that simulates the transmission of a very high-speed pulse on an MMIC CPW under various terminations.

This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the computer aided design (CAD) of the monolithic microwave and millimeter wave integrated circuits (MIMIC). In this reporting period, we have derived a new model for the high electron mobility transistor (HEMT) based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAs/GaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mS/mm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAs/GaAs HEMT's have also been obtained. In addition, two-dimensional models of the submicron MESFET's, HEMT's and HBT's are currently being developed for the CRAY X-MP/48 supercomputer. Preliminary results obtained are also presented in this report.

This report consists of two parts and a preface. In the preface, six viable interfacing techniques between the microstrip integrated circuits and the microstrip antennas through the feeding networks are discussed with the comments on their advantages and disadvantages. In Part I, the microstrip antenna fed by a slot line is investigated both theoretically and experimentally. This configuration is an attractive element for use in active integrated arrays. This new hybrid technology attempts to incorporate active devices such as amplifier and phase shifters with printed microstrip antennas into a single monolithic package. The boundary value problem for the antenna is analyzed in terms of the integral equations for the equivalent electric currents on the patch and magnetic currents representing the slot line. The integral equations are discretized by Galerkin's method and solved on the computer. (rrh)

This publication contains technical a contractual summaries of the MIMIC program's Phase 3 technology support programs. Each project description includes a discussion of the objectives of the effort, the approach pursued and recent progress. Also identified are the performing organization(s), principal investigator and/or other key personnel, contract number, program funding and duration, and program monitor/COTR. Concluding the document is a directory of the personnel associated with these projects, from whom more information may be requested.

This brief includes the top level status of the current Multifunction Fuze (MFF) configuration as well as the process with which we developed the electromagnetic vulnerability (EMV) tests, an overview of the Transmitter (TX) & Receiver (RX) Monolithic Microwave Integrated Circuit (MMIC) designs, the details of the EMV tests, and wrap-up with conclusions.

This document describes a set of microelectronic test structure designs for manufacturers of GaAs MMIC devices. These designs enable the dc measurement of process and device parameters that can be used to diagnose, monitor, compare, and predict the performance of the fabrication process or the devices produced. The test structure designs are embodied in a computer-aided design library known as NISTGAAS, which contains 8 types of test structures, implemented in 125 combinations of process layer and size, and based on a 2 x 6 probe-pad array. Any design, once fabricated on a wafer, can be probed using commonly available commercial parametric test system equipment. This document specifies how to implement and test each type of test structure and how to analyze the results. It also provides guidance on how to apply the set of test structures at the wafer level. Although NISTGAAS was designed for the process described in this document, it was also designed and demonstrated to be adaptable for other MMIC processes. Since NISTGAAS contains cell designs rather than a chip design, it provides a flexible test structure methodology that also provides the MMIC community with a common reference point for assessing process and device performance.

A broadband amplifier design approach for microwave monolithic integrated circuits (MMICs) was previously documented in a technical report, ARL-TR-6278, Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers, December 2012. The three amplifier designs previously fabricated and tested as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author, covered 2 6, 5 11, and 28 GHz. Since there was extra space available in the fall 2012 JHU MMIC Design Course fabrication, two additional amplifiers were designed, fabricated, and tested following the same design approach. This follow-up technical note documents the two recent amplifier designs, one was designed for 1 5 GHz operation and the second for 10 19 GHz operation.