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A broadband amplifier design approach for microwave monolithic integrated circuits (MMICs) was previously documented in a technical report, ARL-TR-6278, Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers, December 2012. The three amplifier designs previously fabricated and tested as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author, covered 2 6, 5 11, and 28 GHz. Since there was extra space available in the fall 2012 JHU MMIC Design Course fabrication, two additional amplifiers were designed, fabricated, and tested following the same design approach. This follow-up technical note documents the two recent amplifier designs, one was designed for 1 5 GHz operation and the second for 10 19 GHz operation.

A broadband amplifier design approach for microwave monolithic integrated circuits (MMICs) was previously documented in a technical report, ARL-TR-6278, Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers, December 2012. The three amplifier designs previously fabricated and tested as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author, covered 2 6, 5 11, and 28 GHz. Since there was extra space available in the fall 2012 JHU MMIC Design Course fabrication, two additional amplifiers were designed, fabricated, and tested following the same design approach. This follow-up technical note documents the two recent amplifier designs, one was designed for 1 5 GHz operation and the second for 10 19 GHz operation.

A broadband power amplifier design approach was used to design several monolithic microwave integrated circuits (MMICs) using a 0.13- m gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) process from TriQuint Semiconductor. The design and fabrication of these circuits were performed as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author. The design approach is taught by Dale Dawson in the JHU Power MMIC Design Course. This approach is useful for designing relatively broadband amplifiers that are limited only be the active transistor s Q .