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As experimental quantum information processing (QIP) rapidly advances, an emerging challenge is to design a scalable architecture that combines various quantum elements into a complex device without compromising their performance. In particular, superconducting quantum circuits have successfully demonstrated many of the requirements for quantum computing, including coherence levels that approach the thresholds for scaling. However, it remains challenging to couple a large number of circuit components through controllable channels while suppressing any other interactions. We propose a hardware platform intended to address these challenges, which combines the advantages of integrated circuit fabrication and long coherence times achievable in three-dimensional circuit quantum electrodynamics (3D cQED). This multilayer microwave integrated quantum circuit (MMIQC) platform provides a path toward the realization of increasingly complex superconducting devices in pursuit of a scalable quantum computer.

Bell System Technical Journal, 48: 6. July-August 1969 pp 1703-1726. Microwave and Millimeter Wave Hybrid Integrated Circuits for Radio Systems. (Schneider, M.V.; Glance, Bernard; Bodtmann, W.F.)

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

The report describes the completion of the studies, initiated in FY 69, carried out to assess the practicability of applying microwave integrated circuits and solid state fundamental oscillators to future sensor subsystems for radar and communications, including data relay. The X-band eight-element phased array was evaluated, a simple MIC module including a printed antenna was constructed and studies were carried out of avalanche diode oscillator modulation characteristics, MIC IMPATT avalanche diode oscillators, MIC antennas, and MIC evaluation techniques.

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

This contract studied 5 principal topics: (1) Full wave analysis of microstrip crossovers, (2) Dynamic and quasi-dynamic analysis of printed circuits, (3) User-friendly computer programs for multiconductor transmission lines, (4) Theory of printed circuits for multilayered dielectrics, and (5) Full-wave analysis of transmission lines in a layered uniaxial medium. (Author)

This contract studied 5 principal topics: (1) Full wave analysis of microstrip crossovers, (2) Dynamic and quasi-dynamic analysis of printed circuits, (3) User-friendly computer programs for multiconductor transmission lines, (4) Theory of printed circuits for multilayered dielectrics, and (5) Full-wave analysis of transmission lines in a layered uniaxial medium. (Author)

The objectives of this research are to develop analytical and computer-aided design techniques for monolithic microwave and millimeter-wave integrated circuits (MMIC & MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low-noise and medium-power microwave and millimeter-wave applications. Circuits to be considered include monolithic low-noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs have been developed, which include large-signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm-POSM has been developed and implemented in the general-purpose Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of large-signal non-linear circuits.

The objectives of this research are to develop analytical and computer-aided design techniques for monolithic microwave and millimeter-wave integrated circuits (MMIC & MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low-noise and medium-power microwave and millimeter-wave applications. Circuits to be considered include monolithic low-noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs have been developed, which include large-signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm-POSM has been developed and implemented in the general-purpose Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of large-signal non-linear circuits.

The complex resonant frequencies of the open structure of a microstrip antenna consisting of two circular microstrip disks in a three layer stacked configuration have been rigorously calculated as a function of the layered parameters and the ratio of the radii of the two disks. Using a dyadic Green's function formulation for horizontally stratified media and the vector Hankel transform, the mixed boundary value problem is reduced to a set of coupled vector integral equations. A rigorous dyadic Green's function formulation in the spectral domain is used to study the dispersion characteristics of signal strip lines in the presence of metallic crossing strips. A set of coupled vector integral equations for the current distribution on the conductors is derived. Galerkin's method is then applied to derive the matrix eigenvalue equation for the propagation constant. A new method for analyzing frequency-dependent transmission line systems with nonlinear terminations is presented. The generalized scattering matrix foundation is used as the foundation for the time domain iteration scheme. Compared to the admittance matrix approach proposed in a previous paper, it has the advantage of shorter impulse response which leads to smaller computer memory requirement and faster computation time. Examples of a microstrip line loaded with nonlinear elements are given to illustrate the efficiency of this method. (rh)

During the last three years of research we have contributed to the technology development for multilayer microwave/millimeter wave integrated circuits (multilayer MMICs) of the future. Such multilevel integration would allow implementation of smaller sized, higher density, and multi-functional microwave/millimeter wave circuits and systems, that are more reliable and cost effective. Specifically, we have (1) investigated new transmission media that are better suited for multilayer integration, where conventional techniques may not work properly, (2) developed novel geometries for efficient signal transition between circuit layers in a multilayer environment, (3) developed new antenna and feeding structures that are specifically meant to work with multilayer integration, and (4) developed new theory and analytical/computational models for the design of transmission lines, layer to layer coupling structures. multilayer antenna feeds, which will greatly support the future development of the multilayer MMIC technology. Our research shows, that there are several fundamental and technological issues that must be carefully considered to advance the multilayer microwave/millimeter wave integration concept. However, by using new techniques and devices, such as those developed by us, much more sophisticated and cost effective circuits and systems can be built to meet the future demands in radar and wireless telecommunication.

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

The objectives of this project were to investigate the full-wave (Maxwellian) analysis for solving and computing the electromagnetic behavior of microwave integrated circuits.

The objectives of this project were to investigate the full-wave (Maxwellian) analysis for solving and computing the electromagnetic behavior of microwave integrated circuits.

NO ABSTRACT (KAR)

This report consists of two parts and a preface. In the preface, six viable interfacing techniques between the microstrip integrated circuits and the microstrip antennas through the feeding networks are discussed with the comments on their advantages and disadvantages. In Part I, the microstrip antenna fed by a slot line is investigated both theoretically and experimentally. This configuration is an attractive element for use in active integrated arrays. This new hybrid technology attempts to incorporate active devices such as amplifier and phase shifters with printed microstrip antennas into a single monolithic package. The boundary value problem for the antenna is analyzed in terms of the integral equations for the equivalent electric currents on the patch and magnetic currents representing the slot line. The integral equations are discretized by Galerkin's method and solved on the computer. (rrh)

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

Work is in progress to determine the dynamic range of superconducting filters by studying their noise and power handling characteristics. The goal is to establish their usefulness in receiver front-end applications. The thermal noise figure of HTS filters and its effect on a filter-low-noise-amplifier chain are being examined. Calculations of the noise figures for the filter alone and for the filter-amplifier chain are shown as a function of filter loss. Notice that, for cooled passive devices, the noise figure is lower than the insertion loss.

An analysis has been carried out to determine the effect of HTS preselector filters on the sensitivity and spur-free dynamic range of a microwave receiver. The study is based on the measurements presented in our quarterly report 8 on intermodulation distortion and noise figure in HTS filters. A result of the analysis is that the low noise figure of HTS filters will allow the benefits of preselection without significantly contributing to the system noise figure. In addition, the intermodulation distortion measured so far in HTS filters was found to be low enough not to affect the system spur-free dynamic range, which is generally set by the other nonlinear components in the system.

Part of this task is to determine how the HTS channelized filterbank can be most effectively demonstrated. Preferably the demonstration should be accomplished in the context of an actual ESM receiver rather than as a laboratory demonstration using laboratory instrumentation. We have identified a demonstration vehicle which will provide the capability. Westinghouse, using internal R&D funding, has developed and demonstrated a wideband channelized receiver with twenty, 100 MHz channels that operates over the 3 to 5 GHz frequency range. This receiver is capable of detecting and correctly determining the frequency of up to three simultaneous signals, even when they have simultaneous leading edges. The HTS filterbank being developed under this program is designed to operate right in the middle of this frequency range (4 GHz) and it has been determined that the filter characteristics and parameters of the two channelizers are similar enough to be compatible with the encoder algorithms. The channelized receiver's log video detectors, A/Ds, and digital encoder are also compatible with the HTS Channelizer design.

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

Applications of atmospheric-pressure organometallic-grown GaAs-AlGaAs epitaxial (OMVPE) structures to potentially improved or new microwave FET structures were investigated. These included AlGaAs buffer layers for low-noise FETs, AlAs buffer layers for power FETs, and use of the selective etching of AlGaAs buffer layers to produce air-isolated FETs. The presence of increased trapping densities in the buffer layers, or surface states on the exposed channel layer in the case of the air-isolated structure, degraded rather than enhanced FET performance. Excellent performance was, however, obtained with conventional GaAs low-noise FETs grown entirely by OMVPE. HEMT structures were also grown by OMVPE, but did not show the increased mobilities of identical structures grown by MBE. GaAs/AlGaAs structures analogous to silicon MOSFETs were also fabricated. Inversion of p-type substrates (n-channel operation) could not be obtained but, unexpectedly, indications were obtained of successful inversion of n-type material (p-channel operation).

A key component of microwave telecommunication systems is the power amplifier (PA). The design parameters of a communication system, such as link performance, power budget, and thermal design are typically driven by the power amplifier's linearity, output power, and efficiency. These design parameters of PA are the key to ensuring an efficient system because the PA is the most power-consuming circuit in the communication system. In an effort to have students involved in this research area, the International Microwave Symposium (IMS) sponsored by IEEE Microwave Theory and Technique Society (MTT-S) has introduced a High Efficiency Power Amplifier Design Competition. In this report, we present a 2.8-GHz, 5-W, highly efficient PA based on a wide bandgap gallium nitride (GaN) high electron mobility transistor (HEMT) device (CGH 40010f from CREE). The PA design was presented at the 2010 IMS Student Design Competition and achieved the competition goal of output power greater than 5 W with a measured power added efficiency (PAE) of 61% at 2.8 GHz.

This final technical report presents results on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. New results include analytical and computer aided device models of GaAs MESFETs and HEMTs or MODFETs, new synthesis techniques for monolithic feedback and distributed amplifiers and a new nonlinear CAD program for MIMIC called CADNON. This program incorporates the new MESFET and HEMT model and has been successfully applied to the design of monolithic millimeter-wave mixers. Keywords: GaAs MESFETs, HEMTs, MODFETs, Monolithic microwave and Millimeter integrated circuits, MMIC, MIMIC, Computer aided design, and Large-signal device models.

High Temperature Superconductor (HTS) devices can and will improve the performance of ESM and shared aperture receiver systems. For the near term the most promising candidate for the reference Channelized Cued ESM receiver system is an HTS IF Delsy line that can provide 200 nanoseconds of delay across a 3 to 5 GHz band. Such a delay line can improve sensitivity by 1 to 2 dB while providing about a 6 dB improvement in two tone dynamic range. Perhaps even of greater importance is that the low device loss combined with the elimination of multiple amplifiers previously needed to overcome loss can significantly improve the amplitude and phase tracking of the delay lines. In future systems it is unlikely that a single HTS device will be employed. Rather, it is more likely that large portions of the RF architecture will be placed in a cooler as a means of achieving performance and cost advantages. This is thought to include an HTS front-end, conventional IF amplifier, and HTS IF receivers. Looking even further in the future it is likely that entire HTS receivers will be remotely located with their HTS antennas and only digits will be returned to central for processing.

A full modal analysis is used to study the dispersion characteristics of microstrip lines periodically loaded with crossing strips in a stratified uniaxially anisotropic medium. Dyadic Green's functions in the spectral domain for the multilayered medium in conjunction with the vector Fourier transform (VFT) are used to formulate a coupled set of vector integral equations for the current distribution on the signal line and the crossing strips. Galerkins procedure is applied to derive the eigenvalue equation for the propagation constant. The effect of anisotropy for both open and shielded structures on the stopband properties is investigated. The input impedance of a microstrip antenna consisting of two circular microstrip disks in a stacked configuration driven by a coaxial probe is investigated. A rigorous analysis is performed using a dyadic Green's function formulation where the mixed boundary value problem is reduced to a set of coupled vector integral equations using the vector Hankel transform. Galerkin's method is employed in the spectral domain where two sets of disk current expansions are used. One set is based on the complete set of orthogonal modes of the magnetic cavity, and the other employs Chebyshev polynomials with the proper edge condition for the disk currents. An additional term is added to the disk current expansion to properly model the current in the vicinity of the probe/disk junction.

These tasks are essentially complete as reported last time, but we are continuing to monitor the progress in other technologies and the evolving subsystems requirements as they relate to the HTS components development. The packaging and characterization work reported here is related to progress made in the parallel High-Temperature Superconducting Space Environment-II (HTSSE-II) program. We have used the filters and delay line to be delivered to HTSSE-II as test vehicles for the fabrication and packaging developments achieved in this ONR/DARPA program. Although in this program this approach is appropriate since all the packaging and characterization required for repeatable results are common to all devices made in both programs.

These tasks are essentially complete as reported last time, but we are continuing to monitor the progress in other technologies and the evolving subsystems requirements as they relate to the HTS components development. The packaging and characterization work reported here is related to progress made in the parallel High-Temperature Superconducting Space Environment-II (HTSSE-II) program. We have used the filters and delay line to be delivered to HTSSE-II as test vehicles for the fabrication and packaging developments achieved in this ONR/DARPA program. Although in this program this approach is appropriate since all the packaging and characterization required for repeatable results are common to all devices made in both programs.

This document describes a set of microelectronic test structure designs for manufacturers of GaAs MMIC devices. These designs enable the dc measurement of process and device parameters that can be used to diagnose, monitor, compare, and predict the performance of the fabrication process or the devices produced. The test structure designs are embodied in a computer-aided design library known as NISTGAAS, which contains 8 types of test structures, implemented in 125 combinations of process layer and size, and based on a 2 x 6 probe-pad array. Any design, once fabricated on a wafer, can be probed using commonly available commercial parametric test system equipment. This document specifies how to implement and test each type of test structure and how to analyze the results. It also provides guidance on how to apply the set of test structures at the wafer level. Although NISTGAAS was designed for the process described in this document, it was also designed and demonstrated to be adaptable for other MMIC processes. Since NISTGAAS contains cell designs rather than a chip design, it provides a flexible test structure methodology that also provides the MMIC community with a common reference point for assessing process and device performance.

This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the computer aided design (CAD) of the monolithic microwave and millimeter wave integrated circuits (MIMIC). In this reporting period, we have derived a new model for the high electron mobility transistor (HEMT) based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAs/GaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mS/mm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAs/GaAs HEMT's have also been obtained. In addition, two-dimensional models of the submicron MESFET's, HEMT's and HBT's are currently being developed for the CRAY X-MP/48 supercomputer. Preliminary results obtained are also presented in this report.

The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

This publication contains technical a contractual summaries of the MIMIC program's Phase 3 technology support programs. Each project description includes a discussion of the objectives of the effort, the approach pursued and recent progress. Also identified are the performing organization(s), principal investigator and/or other key personnel, contract number, program funding and duration, and program monitor/COTR. Concluding the document is a directory of the personnel associated with these projects, from whom more information may be requested.

This publication contains technical a contractual summaries of the MIMIC program's Phase 3 technology support programs. Each project description includes a discussion of the objectives of the effort, the approach pursued and recent progress. Also identified are the performing organization(s), principal investigator and/or other key personnel, contract number, program funding and duration, and program monitor/COTR. Concluding the document is a directory of the personnel associated with these projects, from whom more information may be requested.

Characteristics and performance of solid state integrated microwave circuit components, devices and techniques

Characteristics and performance of solid state integrated microwave circuit components, devices and techniques

Characteristics and performance of solid state integrated microwave circuit components, devices and techniques

A broadband amplifier design approach for microwave monolithic integrated circuits (MMICs) was previously documented in a technical report, ARL-TR-6278, Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers, December 2012. The three amplifier designs previously fabricated and tested as part of the fall 2011 Johns Hopkins University (JHU) MMIC Design Course, taught by the author, covered 2 6, 5 11, and 28 GHz. Since there was extra space available in the fall 2012 JHU MMIC Design Course fabrication, two additional amplifiers were designed, fabricated, and tested following the same design approach. This follow-up technical note documents the two recent amplifier designs, one was designed for 1 5 GHz operation and the second for 10 19 GHz operation.

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

The objective of the first phase of the GaAs Analog Integrated Circuits program is to develop several monolithic circuits which can be used as building blocks in a 360 deg continuously variable phase shifter. The circuits are to be designed, fabricated and tested to determine how they will perform in a hybrid and later a completely monolithic phase shifter. The circuits required include microwave analog multipliers at 10 GHz, a quadrature phase splitter and appropriate input and output circuits.

An inversion algorithm is presented based on a recently developed inversion method referred to as the Renormalized Source-Type Integral Equation approach. The objective is to overcome some of the limitations and difficulties of the iterative Born technique. It recasts the inversion, nonlinear in nature, in terms of the solution of a set of linear equations; however, the final inversion equation is still nonlinear. The derived inversion equation is an exact equation which sums up the iterative Neuman (or Born) series diverges; hence, the name Renormalized Source-Type Integral Equation Approach. The coupled-wave theory is generalized to analyze the diffraction of waves by chiral gratings for arbitrary angle of incidence and polarizations. Numerical results are illustrated for the Stokes parameters of diffracted Floquet modes versus the thickness of chiral gratings with various chiralities. Both horizontal and vertical incidences are considered for illustration. The diffracted waves from chiral gratings are in general elliptically polarized; and at some particular instances, it is possible for chiral gratings to convert a linearly polarized incident field into two nearly circularly polarized Floquet modes propagating in different directions.

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

Bell System Technical Journal, 50: 7. September 1971 pp 2175-2194. TH-3 Microwave Radio System: Microwave Integrated Circuits. (Dietrich, N.R.)

Very high-speed picosecond range pulse transmission along a coplanar wave guide (CPW) integrated in a monolithic microwave integrated circuit (MMIC) is analyzed in the time domain, changing the input excitations, conductivity of the epitaxial layer, and terminating conditions. The time domain waveform is obtained by inverse discrete Fourier transform (IDFT) of the frequency domain data, namely, complex characteristic impedance and propagation constant. The full wave mode-matching method (MMM) is employed to analyze the dispersion of the CPW. A simple wide band matching scheme is found to be effective to make the slow-wave CPW a viable circuit element in applications such as a delay line or an interconnection line. Knowing the device processing data and physical dimensions, a designer should benefit from the present analysis that simulates the transmission of a very high-speed pulse on an MMIC CPW under various terminations.

Volume comparisons were made between HTS microstrip transmission lines and other high Q electromagnetic structures and between HTS microstrip and high-performance multimode coupled dielectric resonator filterbanks. An assessment was made of the potential performance of HTS filterbanks for EW systems as compared with measured results to date using magnetostatic-wave (MSW) filterbanks. Assuming pulsed input signals centered at next-to-adjacent channels, we compared their rejection and the time-lapse required to attain this rejection. MSW filterbanks achieve a 55 dB rejection after about 400 nS.

The complex resonant frequencies of the open structure of a microstrip antenna consisting of two circular microstrip disks in a three layer stacked configuration have been rigorously calculated as a function of the layered parameters and the ratio of the radii of the two disks. It is shown that for each mode, the stacked circular microstrip structure has dual resonant frequencies which are associated with the two coupled constitutive resonators of the structure and which are a function of the mutual coupling between them. The dual frequency behavior of the stacked microstrip structure, easily controlled by varying the parameters of layer 2 and disk radii ratio, given fixed parameters for layer 1 and layer 3, may be used to broaden the bandwidth or provide for dual frequency use of the antenna.