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An experimental system to measure ionization coefficients in InP and related compounds is described. The growth of high purity liquid phase epitaxial InP is described and the properties of such layers discussed. (Author)

An experimental system to measure ionization coefficients in InP and related compounds is described. The current-voltage characteristics of Schottky barriers on p-type InP are presented. A set of masks designed to fabricate guarded Schottky diodes for making ionization coefficient measurements is described. (Author)

The growth and characterization of high-purity epitaxial layers grown by liquid-phase-epitaxy (LPE) are described. Chemical and electrical evaluation of the layers indicate that silicon and sulfur are the dominant residual donors in LPE-grown InP layers. Techniques for controlling these dopants are discussed. The current-voltage characteristics of Schottky diodes on p-InP are analyzed. Aluminum, silver, and gold were tried as Schottky-barrier metals. The results reported here demonstrate that Al is the best choice as the Schottky metal. An automated system to measure the relative photoresponse from Schottky diodes has been assembled. Majority carrier (hole) initiated avalanche multiplication has been observed on these Schottky diodes. (Author)

An experimental system to measure ionization coefficients in InP and related compounds is described. The current-voltage characteristics of Schottky barriers on p-type InP are presented. A set of masks designed to fabricate guarded Schottky diodes for making ionization coefficient measurements is described. (Author)

The use of plasma hydrogenation for decreasing the conductivity of p- type InP by several orders of magnitude has been the object of recent reports. The physical phenomenon involved is the neutralization of electrically active acceptors by the in-diffused hydrogen species with the formation of hydrogen acceptor pairs as detected by infrared vibrational spectroscopy. An obvious application of this effect is the realization of electrical isolation in various electronic and optoelectronic InP-based devices. The BRS laser technology makes use of proton-implantation in order to enhance the output efficiency by reducing the current leaks across the InP/InP homojunction. While proton implantation provides adequate electrical insulation, it is also likely to introduce defects which can act as nonradiative centers. In the present paper we report for the first time the realisation and preliminary characterization of high performance lasers by plasma hydrogenation instead of proton implantation. (jes)

The growth and characterization of high-purity epitaxial layers grown by liquid-phase-epitaxy (LPE) are described. Chemical and electrical evaluation of the layers indicate that silicon and sulfur are the dominant residual donors in LPE-grown InP layes. Techniques for controlling these dopants are discussed. The current-voltage characteristics of Schottky diodes on p-InP are analyzed. Aluminum, silver, and gold were tried as Schottky-barrier metals. The results reported here demonstrate that Al is the best choice as the Schottky metal. An automated system has been used to measure the relative photoresponse from Schottky diodes. Photocurrent measurements due to pure electron and pure hole injection have been made as a function of bias applied to the sample. This data has been analyzed to yield ionization coefficients of electrons (alpha) and holes (beta) in InP. The results clearly demonstrate that holes have a larger ionization coefficient than electrons in InP. (Author)

The report describes liquid phase epitaxial growth of indium phosphide. The electrical and luminescence properties of such layers are discussed. Ion implantation doping and encapsulant-free annealing studies are discussed. (Author)