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Dtic Ada336241%3a Jprs Report%2c Science And Technology Japan%2c 3rd Microelectronics Symposium by Defense Technical Information Center
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1DTIC ADA336241: JPRS Report, Science And Technology Japan, 3rd Microelectronics Symposium
By Defense Technical Information Center
PARTIAL CONTENTS; Activated Metal Junction Technology for AlN/Cu System High Power Module Substrate; Application of Aluminum Nitride to Large Electric Power Insulating Substrate; Degree of Sintering, Thermal Conductivity of Aluminum Nitride Ultrafine Particles; Effect of Baking Pressure on AlN Sintering; Thick Film Resistor for Use in AlN Ceramics.
“DTIC ADA336241: JPRS Report, Science And Technology Japan, 3rd Microelectronics Symposium” Metadata:
- Title: ➤ DTIC ADA336241: JPRS Report, Science And Technology Japan, 3rd Microelectronics Symposium
- Author: ➤ Defense Technical Information Center
- Language: English
“DTIC ADA336241: JPRS Report, Science And Technology Japan, 3rd Microelectronics Symposium” Subjects and Themes:
- Subjects: ➤ DTIC Archive - NATIONAL TECHNICAL INFORMATION SERVICE SPRINGFIELD VA - *SYMPOSIA - *JAPAN - *MICROELECTRONICS - METALS - ACTIVATION - ALUMINUM COMPOUNDS - NITRIDES - PARTICLES - THERMAL CONDUCTIVITY - JUNCTIONS - THICK FILMS - SINTERING - ULTRAFINES - FILM RESISTORS.
Edition Identifiers:
- Internet Archive ID: DTIC_ADA336241
Downloads Information:
The book is available for download in "texts" format, the size of the file-s is: 50.90 Mbs, the file-s for this book were downloaded 63 times, the file-s went public at Tue Apr 10 2018.
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