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We report the design, fabrication, and demonstration of thin-film- edge emitter vacuum diodes and transistors. The two-terminal device uses a thin- film-edge emitter as an electron source whose current density depends on the anode voltage. The three terminal device uses a thin-film-edge emitter as an electron source whose current density depends on the voltage applied to the extraction electrodes (gates). The emitted electrons are collected by the anode. All three electrodes (emitter, gate, and anode) are integrated on the same substrate. The devices have integrated on-chip resistors for bum-out prevention. The 3D microstructure was fabricated using IC and micromachining techniques. Contrasted with the usual vertical FEA structures, the particular vacuum transistor design invokes two dimensional vertical symmetry for the extraction electrodes (gate) using multi-layer thin film deposition techniques. The central thin-film-edge emitter is about 300 A thick and is surrounded by two gate electrodes, one above and one below. Vacuum microelectronics, Edge emitter, Thin film technology, High frequency devices, Triodes.