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This report documents the findings of Kopin Corporation during the first five months of the program. Significant results include the development of a new process sequence, and a verification of the low stress in ZMR (ISE) material. Current direction is aimed at the fabrication of both accelerometers and pressure sensors using our advanced SOI process. During this reporting period, wafers from Phase I which had been processed were closely examined. The structures being observed were fabricated on a 3 micron oxide layer and had 1 micron of silicon film thickness. Therefore, from the base of the beam or bridge to its free area there exists a step height of 3 micron. If the microscope is focussed on the free region of the bridge, as in the photo, then the bridge bases will be out of focus. This fact is readily apparent in the photograph. If the free region of the beam had collapsed onto the substrate, then it would be out of focus in the photograph. None of the bridge structures are out of focus in the figure 1a indicating that they are all freely supported 3 microns above the substrate.