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Defects In Silicon%2c Hydrogen by Symposium A On Defect In Silicon%2c Hydrogen Of The E Mrs Spring Conference (1998 Strasbourg%2c France)

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1Investigation Of Hydrogen Plasma Treatment For Reducing Defects In Silicon Quantum Dot Superlattice Structure With Amorphous Silicon Carbide Matrix.

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This article is from Nanoscale Research Letters , volume 9 . Abstract We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

“Investigation Of Hydrogen Plasma Treatment For Reducing Defects In Silicon Quantum Dot Superlattice Structure With Amorphous Silicon Carbide Matrix.” Metadata:

  • Title: ➤  Investigation Of Hydrogen Plasma Treatment For Reducing Defects In Silicon Quantum Dot Superlattice Structure With Amorphous Silicon Carbide Matrix.
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  • Language: English

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