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In December 1996, a project was initiated at the Institute for Systems Research (ISR), under an agreement between Northrop Grumman Electronic Sensors and Systems Division (ESSD) and the ISR, to investigate the epitaxial growth of silicon{germanium (Si{Ge) heterostructures in a commercial rapid thermal chemical vapor deposition (RTCVD) reactor. This report provides a detailed account of the objectives and results of work done on this project as of September 1997. The report covers two main topics - modeling and model reduction. Physics{based models are developed for thermal, fluid, and chemical mechanisms involved in epitaxial growth. Experimental work for model validation and determination of growth parameters is described. Due to the complexity and high computational demands of the models, we investigate the use of model reduction techniques to reduce the model complexity, leading to faster simulation and facilitating the use of standard control and optimization strategies.

The binary gas mixture CF4/O2 is widely used in industrial production of semiconductor devices to increase the etching rate of silicon wafers. The number of papers devoted to mathematical modeling of silicon etching in CF4/O2 plasma is relatively small. Moreover, the numerical modeling of silicon etching with simplifying kinetics of the gas phase and heterogeneous chemical reactions predicts a maximum of the etching rate near the 50% fraction of O2 in the parent gas mixture 1. This is inconsistent with experimental data where the maximum etching rate detected was at the 15-30% range of O2. In this paper, the results of numerical optimization of a radial flow plasma-chemical reactor depending on the binary gas composition CF4/O2 are presented. Quantitative estimations of oxygen chemisorption and adsorption of CF2 CF3 contributions to the etching rate are obtained.

The binary gas mixture CF4/O2 is widely used in industrial production of semiconductor devices to increase the etching rate of silicon wafers. The number of papers devoted to mathematical modeling of silicon etching in CF4/O2 plasma is relatively small. Moreover, the numerical modeling of silicon etching with simplifying kinetics of the gas phase and heterogeneous chemical reactions predicts a maximum of the etching rate near the 50% fraction of O2 in the parent gas mixture 1. This is inconsistent with experimental data where the maximum etching rate detected was at the 15-30% range of O2. In this paper, the results of numerical optimization of a radial flow plasma-chemical reactor depending on the binary gas composition CF4/O2 are presented. Quantitative estimations of oxygen chemisorption and adsorption of CF2 CF3 contributions to the etching rate are obtained.

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