Cryogenic operation of silicon power devices - Info and Reading Options
By Singh, Ranbir.
"Cryogenic operation of silicon power devices" was published by Kluwer Academic Publishers in 1998 - Boston, it has 148 pages and the language of the book is English.
“Cryogenic operation of silicon power devices” Metadata:
- Title: ➤ Cryogenic operation of silicon power devices
- Author: Singh, Ranbir.
- Language: English
- Number of Pages: 148
- Publisher: Kluwer Academic Publishers
- Publish Date: 1998
- Publish Location: Boston
“Cryogenic operation of silicon power devices” Subjects and Themes:
- Subjects: ➤ Silicon - Materials - Cryoelectronics - Power transistors - Effect of tempreature on - Effect of temperature on
Edition Specifications:
- Pagination: xviii, 148 p. :
Edition Identifiers:
- The Open Library ID: OL347522M - OL325086W
- Online Computer Library Center (OCLC) ID: 38765021
- Library of Congress Control Number (LCCN): 98006644
- ISBN-10: 0792381572
- All ISBNs: 0792381572
AI-generated Review of “Cryogenic operation of silicon power devices”:
"Cryogenic operation of silicon power devices" Description:
The Open Library:
This is the first comprehensive resource of power device electrical characteristics in a cryogenic environment. Using theoretical and experimental knowledge from the literature, temperature dependence of fundamental silicon material parameters like intrinsic carrier concentration, carrier mobilities, lifetimes and bandgap narrowing was identified. The temperature dependent model of avalanche breakdown was developed using experimental data on numerous devices. A wide range of power devices, each with its own unique features, was chosen for theoretical and experimental analysis. Using these analyses, Schottky diodes, power Mosfets, power BJTs, and power JEETs were optimized in the 300-77K temperature range.
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