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  • Title: ➤  Atomically Thin Binary V-V Compound Semiconductor: A First-principles Study
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Searching the novel 2D semiconductor is crucial to develop the next-generation low-dimensional electronic device. Using first-principles calculations, we propose a class of unexplored binary V-V compound semiconductor (PN, AsN, SbN, AsP, SbP and SbAs) with monolayer black phosphorene ($\alpha$) and blue phosphorene ($\beta$) structure. Our phonon spectra and room-temperature molecular dynamics (MD) calculations indicate that all compounds are very stable. Moreover, most of compounds are found to present a moderate energy gap in the visible frequency range, which can be tuned gradually by in-plane strain. Especially, $\alpha$-phase V-V compounds have a direct gap while $\beta$-SbN, AsN, SbP, and SbAs may be promising candidates of 2D solar cell materials due to a wide gap separating acoustic and optical phonon modes. Furthermore, vertical heterostructures can be also built using lattice matched $\alpha$($\beta$)-SbN and phosphorene, and both vdW heterostructures are found to have intriguing direct band gap. The present investigation not only broads the scope of layered group V semiconductors but also provides an unprecedented route for the potential applications of 2D V-V families in optoelectronic and nanoelectronic semiconductor devices.

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"Atomically Thin Binary V-V Compound Semiconductor: A First-principles Study" is available for download from The Internet Archive in "texts" format, the size of the file-s is: 0.98 Mbs, and the file-s went public at Thu Jun 28 2018.

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  • Added Date: 2018-06-28 21:19:10
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