Structure and properties of dislocations in semiconductors 1989 - Info and Reading Options
proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989
By International Symposium on the Structure and Properties of Dislocations in Semiconductors (6th 1989 University of Oxford)
"Structure and properties of dislocations in semiconductors 1989" was published by Institute of Physics in 1989 - Bristol, it has 470 pages and the language of the book is English.
“Structure and properties of dislocations in semiconductors 1989” Metadata:
- Title: ➤ Structure and properties of dislocations in semiconductors 1989
- Author: ➤ International Symposium on the Structure and Properties of Dislocations in Semiconductors (6th 1989 University of Oxford)
- Language: English
- Number of Pages: 470
- Publisher: Institute of Physics
- Publish Date: 1989
- Publish Location: Bristol
“Structure and properties of dislocations in semiconductors 1989” Subjects and Themes:
- Subjects: Congresses - Defects - Dislocations in crystals - Dislocations in metals - Semiconductors
Edition Specifications:
- Pagination: xii, 470 p. :
Edition Identifiers:
- The Open Library ID: OL2202736M - OL4788932W
- Online Computer Library Center (OCLC) ID: 20421130
- Library of Congress Control Number (LCCN): 89024491
- ISBN-10: 0854980601
- All ISBNs: 0854980601
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